Volume 37; Issue 3

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Journal of Semiconductors
Volume 37; Issue 3

Journal of Semiconductors

Volume 37; Issue 3

1

First-principles calculation on electronic properties of B and N co-doping carbon nanotubes

Shi, Jianhao, Zhao, Tong, Li, Xuechao, Huo, Meng, Wan, Rundong

Journal:

Journal of Semiconductors

Year:

2016

Language:

english

File:

PDF, 3.25 MB

english, 2016

2

BE-SONOS flash memory along with metal gate and high- k dielectrics in tunnel barrier and its impact on charge retention dynamics

Jain, Sonal, Gupta, Deepika, Neema, Vaibhav, Vishwakarma, Santosh

Journal:

Journal of Semiconductors

Year:

2016

Language:

english

File:

PDF, 1.18 MB

english, 2016

3

High-quality ZnO growth, doping, and polarization effect

Tang, Kun, Gu, Shulin, Ye, Jiandong, Zhu, Shunming, Zhang, Rong, Zheng, Youdou

Journal:

Journal of Semiconductors

Year:

2016

Language:

english

File:

PDF, 1.76 MB

english, 2016

4

Small-signal model parameter extraction for AlGaN/GaN HEMT

Yu, Le, Zheng, Yingkui, Zhang, Sheng, Pang, Lei, Wei, Ke, Ma, Xiaohua

Journal:

Journal of Semiconductors

Year:

2016

Language:

english

File:

PDF, 477 KB

english, 2016

5

High performance 14-bit pipelined redundant signed digit ADC

Narula, Swina, Pandey, Sujata

Journal:

Journal of Semiconductors

Year:

2016

Language:

english

File:

PDF, 1.28 MB

english, 2016

6

Total dose effects on the g–r noise of JFET transistors

Hu, Wei, Zhuang, Yiqi, Bao, Junlin, Zhao, Qifeng

Journal:

Journal of Semiconductors

Year:

2016

Language:

english

File:

PDF, 298 KB

english, 2016

7

A 2.5 GS/s 14-bit D/A converter with 8 to 1 MUX

Zhang, Jun'an, Li, Guangjun, Zhang, Ruitao, Fu, Dongbing, Li, Jiaoxue, Wei, Yafeng, Yan, Bo, Liu, Jun, Li, Ruzhang

Journal:

Journal of Semiconductors

Year:

2016

Language:

english

File:

PDF, 4.24 MB

english, 2016

8

Structural, optical and electrical properties of Sn x S y thin films grown by spray ultrasonic

Kherchachi, I. B., Attaf, A., Saidi, H., Bouhdjer, A., Bendjedidi, H., Benkhetta, Y., Azizi, R.

Journal:

Journal of Semiconductors

Year:

2016

Language:

english

File:

PDF, 540 KB

english, 2016

9

Effect of relaxation on the energetics and electronic structure of clean Ag 3 PO 4 (111) surface

Ma, Xinguo, Yan, Jie, Liu, Na, Zhu, Lin, Wang, Bei, Huang, Chuyun, Lü, Hui

Journal:

Journal of Semiconductors

Year:

2016

Language:

english

File:

PDF, 1.08 MB

english, 2016

10

Pyrolysis preparation of WO 3 thin films using ammonium metatungstate DMF/water solution for efficient compact layers in planar perovskite solar cells

Zhang, Jincheng, Shi, Chengwu, Chen, Junjun, Ying, Chao, Wu, Ni, Wang, Mao

Journal:

Journal of Semiconductors

Year:

2016

Language:

english

File:

PDF, 4.25 MB

english, 2016

11

A SHA-less 14-bit, 100-MS/s pipelined ADC with comparator offset cancellation in background

Wang, Xiaofei, Zhang, Hong, Zhang, Jie, Du, Xin, Hao, Yue

Journal:

Journal of Semiconductors

Year:

2016

Language:

english

File:

PDF, 1.84 MB

english, 2016

12

Optimal design analysis for thermal performance of high power 2.5D package

Liu, Xiaoyang, Ma, He, Yu, Daquan, Chen, Wenlu, Wu, Xiaolong

Journal:

Journal of Semiconductors

Year:

2016

Language:

english

File:

PDF, 803 KB

english, 2016

13

A 0.18 μm CMOS transmit physical coding sublayer IC for 100G Ethernet

Ruan, Weihua, Hu, Qingsheng

Journal:

Journal of Semiconductors

Year:

2016

Language:

english

File:

PDF, 2.06 MB

english, 2016

14

Effect of polishing parameters on abrasive free chemical mechanical planarization of semi-polar (112¯2) aluminum nitride surface

Asghar, Khushnuma, Das, D.

Journal:

Journal of Semiconductors

Year:

2016

Language:

english

File:

PDF, 5.61 MB

english, 2016

15

Corrigendum: Characteristics of HfO 2 /Hf-based bipolar resistive memories (2015 J. Semicond. 36 064010)

Bi, Jinshun, Han, Zhengsheng

Journal:

Journal of Semiconductors

Year:

2016

Language:

english

File:

PDF, 87 KB

english, 2016

16

Current mechanism and band alignment of Al (Pt)/HfGdO/Ge capacitors

Yuan, Junjun, Fang, Zebo, Zhu, Yanyan, Yao, Bo, Liu, Shiyan, He, Gang, Tan, Yongsheng

Journal:

Journal of Semiconductors

Year:

2016

Language:

english

File:

PDF, 1.31 MB

english, 2016

17

A 430 mW 16 b 170 MS/s CMOS pipelined ADC with 77.2 dB SNR and 97.6 dB SFDR

Zhang, Hui, Li, Dan, Wan, Lei, Zhang, Hui, Wang, Haijun, Gao, Yuan, Zhu, Feili, Wang, Ziqi, Ding, Xuexin

Journal:

Journal of Semiconductors

Year:

2016

Language:

english

File:

PDF, 4.53 MB

english, 2016

18

Molecular dynamic simulation of non-melt laser annealing process

Yan, Liren, Li, Dai, Zhang, Wei, Liu, Zhihong, Zhou, Wei, Wang, Quan

Journal:

Journal of Semiconductors

Year:

2016

Language:

english

File:

PDF, 349 KB

english, 2016

19

Design and fabrication of 1.55 μm broad area slotted single-mode Fabry–Perot lasers

Li, Mengke, Yuan, Lijun, Yu, Hongyan, Kan, Qiang, Li, Shiyan, Mi, Junping, Pan, Jiaoqing

Journal:

Journal of Semiconductors

Year:

2016

Language:

english

File:

PDF, 993 KB

english, 2016

20

Direct tunneling gate current model for symmetric double gate junctionless transistor with SiO 2 /high- k gate stacked dielectric

Amin, S. Intekhab, Sarin, R. K.

Journal:

Journal of Semiconductors

Year:

2016

Language:

english

File:

PDF, 482 KB

english, 2016