Volume 38; Issue 12

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Journal of Semiconductors
Volume 38; Issue 12

Journal of Semiconductors

Volume 38; Issue 12

1

Investigation of post-thermal annealing on material properties of Cu–In–Zn–Se thin films

Güllü, H. H., Parlak, M.

Journal:

Journal of Semiconductors

Year:

2017

Language:

english

File:

PDF, 891 KB

english, 2017

2

Design of a cylindrical LED substrate without radiator

Tang, Fan, Guo, Zhenning

Journal:

Journal of Semiconductors

Year:

2017

Language:

english

File:

PDF, 590 KB

english, 2017

3

Cylindrical gate all around Schottky barrier MOSFET with insulated shallow extensions at source/drain for removal of ambipolarity: a novel approach

Kumar, Manoj, Pratap, Yogesh, Haldar, Subhasis, Gupta, Mridula, Gupta, R. S.

Journal:

Journal of Semiconductors

Year:

2017

Language:

english

File:

PDF, 515 KB

english, 2017

4

Device and circuit analysis of a sub 20 nm double gate MOSFET with gate stack using a look-up-table-based approach

Chakraborty, S, Dasgupta, A, Das, R, Kar, M, Kundu, A, Sarkar, C K

Journal:

Journal of Semiconductors

Year:

2017

Language:

english

File:

PDF, 1.15 MB

english, 2017

5

High-speed photodetectors in optical communication system

Zhao, Zeping, Liu, Jianguo, Liu, Yu, Zhu, Ninghua

Journal:

Journal of Semiconductors

Year:

2017

Language:

english

File:

PDF, 2.15 MB

english, 2017

6

All-optical temporal fractional order differentiator using an in-fiber ellipsoidal air-microcavity

Zhang, Lihong, Sun, Shuqian, Li, Ming, Zhu, Ninghua

Journal:

Journal of Semiconductors

Year:

2017

Language:

english

File:

PDF, 1.75 MB

english, 2017

7

Impact of underlap spacer region variation on electrostatic and analog performance of symmetrical high- k SOI FinFET at 20 nm channel length

Jain, Neeraj, Raj, Balwinder

Journal:

Journal of Semiconductors

Year:

2017

Language:

english

File:

PDF, 5.48 MB

english, 2017

8

Fabrication and modeling of multi-layer metal–insulator-metal capacitors

Karthik, R, Akshaykranth, A

Journal:

Journal of Semiconductors

Year:

2017

Language:

english

File:

PDF, 1.22 MB

english, 2017

9

SEGR- and SEB-hardened structure with DSPSOI in power MOSFETs

Tang, Zhaohuan, Fu, Xinghua, Yang, Fashun, Tan, Kaizhou, Ma, Kui, Wu, Xue, Lin, Jiexing

Journal:

Journal of Semiconductors

Year:

2017

Language:

english

File:

PDF, 2.63 MB

english, 2017

10

Influence of oxygen doping on resistive-switching characteristic of a-Si/c-Si device

Zhang, Jiahua, Chen, Da, Huang, Shihua

Journal:

Journal of Semiconductors

Year:

2017

Language:

english

File:

PDF, 516 KB

english, 2017

11

Design and optimization analysis of dual material gate on DG-IMOS

Singh, Sarabdeep, Raman, Ashish, Kumar, Naveen

Journal:

Journal of Semiconductors

Year:

2017

Language:

english

File:

PDF, 1.56 MB

english, 2017

12

Direct evidence of traps controlling the carriers transport in SnO 2 nanobelts

Berengue, Olivia M., Chiquito, Adenilson J.

Journal:

Journal of Semiconductors

Year:

2017

Language:

english

File:

PDF, 1.35 MB

english, 2017

13

Optical properties of Zn-diffused InP layers for the planar-type InGaAs/InP photodetectors

Chen, Guifeng, Wang, Mengxue, Yang, Wenxian, Tan, Ming, Wu, Yuanyuan, Dai, Pan, Huang, Yuyang, Lu, Shulong

Journal:

Journal of Semiconductors

Year:

2017

Language:

english

File:

PDF, 1013 KB

english, 2017

14

A fractional- N frequency divider for multi-standard wireless transceiver fabricated in 0.18 μ m CMOS process

Wang, Jiafeng, Fan, Xiangning, Shi, Xiaoyang, Wang, Zhigong

Journal:

Journal of Semiconductors

Year:

2017

Language:

english

File:

PDF, 819 KB

english, 2017