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Volume 38; Issue 12
Main
Journal of Semiconductors
Volume 38; Issue 12
Journal of Semiconductors
Volume 38; Issue 12
1
Investigation of post-thermal annealing on material properties of Cu–In–Zn–Se thin films
Güllü, H. H.
,
Parlak, M.
Journal:
Journal of Semiconductors
Year:
2017
Language:
english
File:
PDF, 891 KB
Your tags:
english, 2017
2
Design of a cylindrical LED substrate without radiator
Tang, Fan
,
Guo, Zhenning
Journal:
Journal of Semiconductors
Year:
2017
Language:
english
File:
PDF, 590 KB
Your tags:
english, 2017
3
Cylindrical gate all around Schottky barrier MOSFET with insulated shallow extensions at source/drain for removal of ambipolarity: a novel approach
Kumar, Manoj
,
Pratap, Yogesh
,
Haldar, Subhasis
,
Gupta, Mridula
,
Gupta, R. S.
Journal:
Journal of Semiconductors
Year:
2017
Language:
english
File:
PDF, 515 KB
Your tags:
english, 2017
4
Device and circuit analysis of a sub 20 nm double gate MOSFET with gate stack using a look-up-table-based approach
Chakraborty, S
,
Dasgupta, A
,
Das, R
,
Kar, M
,
Kundu, A
,
Sarkar, C K
Journal:
Journal of Semiconductors
Year:
2017
Language:
english
File:
PDF, 1.15 MB
Your tags:
english, 2017
5
High-speed photodetectors in optical communication system
Zhao, Zeping
,
Liu, Jianguo
,
Liu, Yu
,
Zhu, Ninghua
Journal:
Journal of Semiconductors
Year:
2017
Language:
english
File:
PDF, 2.15 MB
Your tags:
english, 2017
6
All-optical temporal fractional order differentiator using an in-fiber ellipsoidal air-microcavity
Zhang, Lihong
,
Sun, Shuqian
,
Li, Ming
,
Zhu, Ninghua
Journal:
Journal of Semiconductors
Year:
2017
Language:
english
File:
PDF, 1.75 MB
Your tags:
english, 2017
7
Impact of underlap spacer region variation on electrostatic and analog performance of symmetrical high- k SOI FinFET at 20 nm channel length
Jain, Neeraj
,
Raj, Balwinder
Journal:
Journal of Semiconductors
Year:
2017
Language:
english
File:
PDF, 5.48 MB
Your tags:
english, 2017
8
Fabrication and modeling of multi-layer metal–insulator-metal capacitors
Karthik, R
,
Akshaykranth, A
Journal:
Journal of Semiconductors
Year:
2017
Language:
english
File:
PDF, 1.22 MB
Your tags:
english, 2017
9
SEGR- and SEB-hardened structure with DSPSOI in power MOSFETs
Tang, Zhaohuan
,
Fu, Xinghua
,
Yang, Fashun
,
Tan, Kaizhou
,
Ma, Kui
,
Wu, Xue
,
Lin, Jiexing
Journal:
Journal of Semiconductors
Year:
2017
Language:
english
File:
PDF, 2.63 MB
Your tags:
english, 2017
10
Influence of oxygen doping on resistive-switching characteristic of a-Si/c-Si device
Zhang, Jiahua
,
Chen, Da
,
Huang, Shihua
Journal:
Journal of Semiconductors
Year:
2017
Language:
english
File:
PDF, 516 KB
Your tags:
english, 2017
11
Design and optimization analysis of dual material gate on DG-IMOS
Singh, Sarabdeep
,
Raman, Ashish
,
Kumar, Naveen
Journal:
Journal of Semiconductors
Year:
2017
Language:
english
File:
PDF, 1.56 MB
Your tags:
english, 2017
12
Direct evidence of traps controlling the carriers transport in SnO 2 nanobelts
Berengue, Olivia M.
,
Chiquito, Adenilson J.
Journal:
Journal of Semiconductors
Year:
2017
Language:
english
File:
PDF, 1.35 MB
Your tags:
english, 2017
13
Optical properties of Zn-diffused InP layers for the planar-type InGaAs/InP photodetectors
Chen, Guifeng
,
Wang, Mengxue
,
Yang, Wenxian
,
Tan, Ming
,
Wu, Yuanyuan
,
Dai, Pan
,
Huang, Yuyang
,
Lu, Shulong
Journal:
Journal of Semiconductors
Year:
2017
Language:
english
File:
PDF, 1013 KB
Your tags:
english, 2017
14
A fractional- N frequency divider for multi-standard wireless transceiver fabricated in 0.18 μ m CMOS process
Wang, Jiafeng
,
Fan, Xiangning
,
Shi, Xiaoyang
,
Wang, Zhigong
Journal:
Journal of Semiconductors
Year:
2017
Language:
english
File:
PDF, 819 KB
Your tags:
english, 2017
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