Volume 39; Issue 7

Main
Journal of Semiconductors
Volume 39; Issue 7

Journal of Semiconductors

Volume 39; Issue 7

1

Recent progress in Pb-free stable inorganic double halide perovskites

Li, Zhenzhu, Yin, Wanjian

Journal:

Journal of Semiconductors

Year:

2018

Language:

english

File:

PDF, 1.39 MB

english, 2018

2

Crystal structure prediction in the context of inverse materials design

Journal:

Journal of Semiconductors

Year:

2018

Language:

english

File:

PDF, 1.41 MB

english, 2018

3

First-principle high-throughput calculations of carrier effective masses of two-dimensional transition metal dichalcogenides

Sun, Yuanhui, Wang, Xinjiang, Zhao, Xin-Gang, Shi, Zhiming, Zhang, Lijun

Journal:

Journal of Semiconductors

Year:

2018

Language:

english

File:

PDF, 889 KB

english, 2018

4

Data-driven material discovery for photocatalysis: a short review

Pan, Jinbo, Yan, Qimin

Journal:

Journal of Semiconductors

Year:

2018

Language:

english

File:

PDF, 755 KB

english, 2018

5

Comparative analysis of memristor models and memories design

Singh, Jeetendra, Raj, Balwinder

Journal:

Journal of Semiconductors

Year:

2018

Language:

english

File:

PDF, 2.48 MB

english, 2018

6

Approaches to design inorganic semiconductors while maintaining structural motifs

Zhang, Xiuwen, Xia, Jianbai

Journal:

Journal of Semiconductors

Year:

2018

Language:

english

File:

PDF, 1.74 MB

english, 2018

7

Hot electron transport in wurtzite-GaN: effects of temperature and doping concentration

Acharyya, Aritra

Journal:

Journal of Semiconductors

Year:

2018

Language:

english

File:

PDF, 750 KB

english, 2018

8

Small-signal model parameter extraction of E-mode N-polar GaN MOS-HEMT using optimization algorithms and its comparison

Panda, D. K., Amarnath, G., Lenka, T. R.

Journal:

Journal of Semiconductors

Year:

2018

Language:

english

File:

PDF, 946 KB

english, 2018

9

A review: crystalline silicon membranes over sealed cavities for pressure sensors by using silicon migration technology

Su, Jiale, Zhang, Xinwei, Zhou, Guoping, Xia, Changfeng, Zhou, Wuqing, Huang, Qing'an

Journal:

Journal of Semiconductors

Year:

2018

Language:

english

File:

PDF, 1.65 MB

english, 2018

10

Research on the hydrogen terminated single crystal diamond MOSFET with MoO 3 dielectric and gold gate metal

Ren, Zeyang, Zhang, Jinfeng, Zhang, Jincheng, Zhang, Chunfu, Yang, Pengzhi, Chen, Dazheng, Li, Yao, Hao, Yue

Journal:

Journal of Semiconductors

Year:

2018

Language:

english

File:

PDF, 1.05 MB

english, 2018

11

Impact of crystal orientation and surface scattering on DG-MOSFETs in quasi-ballistic region

Shen, Lei, Di, Shaoyan, Yin, Longxiang, Li, Yun, Liu, Xiaoyan, Du, Gang

Journal:

Journal of Semiconductors

Year:

2018

Language:

english

File:

PDF, 1.48 MB

english, 2018

12

Controlling morphology evolution of AlN nanostructures: influence of growth conditions in physical vapor transport

Jin, Lei, Cheng, Hongjuan, Chen, Jianli, Zhang, Song, Xu, Yongkuan, Lai, Zhanping

Journal:

Journal of Semiconductors

Year:

2018

Language:

english

File:

PDF, 3.08 MB

english, 2018

13

A GaN/InGaN/AlGaN MQW RTD for versatile MVL applications with improved logic stability

Zhang, Haipeng, Zhang, Qiang, Lin, Mi, Lü, Weifeng, Zhang, Zhonghai, Bai, Jianling, He, Jian, Wang, Bin, Wang, Dejun

Journal:

Journal of Semiconductors

Year:

2018

File:

PDF, 2.29 MB

2018

14

Micro-plasma noise of 30 krad gamma irradiation broken-down GaN-based LED

Liu, Yu’an, Luo, Wenlang

Journal:

Journal of Semiconductors

Year:

2018

File:

PDF, 401 KB

2018