Volume 105; Issue 12

1

Constitution of Binary Alloys

Year:
1958
Language:
english
File:
PDF, 256 KB
english, 1958
5

Preparation of Crystals of Pure Hexagonal SiC

Year:
1958
Language:
english
File:
PDF, 818 KB
english, 1958
6

Zone Melting

Year:
1958
Language:
english
File:
PDF, 137 KB
english, 1958
9

Some Semiconducting Properties of HgTe

Year:
1958
Language:
english
File:
PDF, 618 KB
english, 1958
17

High-Pressure, High-Temperature Growth of Cadmium Sulfide Crystals

Year:
1958
Language:
english
File:
PDF, 1.05 MB
english, 1958
18

Use of Bismuth as a Donor-Type Impurity in Germanium Single Crystals

Year:
1958
Language:
english
File:
PDF, 547 KB
english, 1958
20

Automatic Process Control

Year:
1958
Language:
english
File:
PDF, 265 KB
english, 1958
21

Insulation Engineering Fundamentals

Year:
1958
Language:
english
File:
PDF, 127 KB
english, 1958
25

Semiconducting Compounds—A Challenge in Applied and Basic Research

Year:
1958
Language:
english
File:
PDF, 888 KB
english, 1958
27

Dispersion of Materials

Year:
1958
Language:
english
File:
PDF, 128 KB
english, 1958
28

Diffusion into Silicon from Glassy Layers

Year:
1958
Language:
english
File:
PDF, 186 KB
english, 1958
29

Electron Mobility in InP

Year:
1958
Language:
english
File:
PDF, 417 KB
english, 1958
36

Diffusion Concentration Profiles by Analog Computation

Year:
1958
Language:
english
File:
PDF, 334 KB
english, 1958
37

Diffusion Control in Silicon by Carrier Gas Composition

Year:
1958
Language:
english
File:
PDF, 660 KB
english, 1958
39

Radioisotopes

Year:
1958
Language:
english
File:
PDF, 125 KB
english, 1958
41

Saturation Currents in Germanium and Silicon Electrodes

Year:
1958
Language:
english
File:
PDF, 338 KB
english, 1958