Volume 21; Issue 2

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Journal of Vacuum Science and Technology
Volume 21; Issue 2

Journal of Vacuum Science and Technology

Volume 21; Issue 2

1

Ideal and relaxed surfaces of SiC

Journal:

Journal of Vacuum Science and Technology

Year:

1982

Language:

english

File:

PDF, 1.09 MB

english, 1982

2

Formation, growth, and stability of the CdS/CuInSe2 interface

Kazmerski, L. L.

Journal:

Journal of Vacuum Science and Technology

Year:

1982

Language:

english

File:

PDF, 939 KB

english, 1982

3

Measurement of ZnSe–GaAs(110) and ZnSe–Ge(110) heterojunction band discontinuities by x-ray photoelectron spectroscopy (XPS)

Kowalczyk, Steven P.

Journal:

Journal of Vacuum Science and Technology

Year:

1982

Language:

english

File:

PDF, 737 KB

english, 1982

4

Reduction of surface states on GaAs by the plasma growth of oxyfluorides

Ahrenkiel, R. K.

Journal:

Journal of Vacuum Science and Technology

Year:

1982

Language:

english

File:

PDF, 653 KB

english, 1982

5

Dry development of ion beam exposed PMMA resist

Journal:

Journal of Vacuum Science and Technology

Year:

1982

Language:

english

File:

PDF, 5.43 MB

english, 1982

6

Formation of alternative surface oxide phases on GaAs by adsorption of O2 or H2O: A UPS, XPS, and SIMS study

Journal:

Journal of Vacuum Science and Technology

Year:

1982

Language:

english

File:

PDF, 806 KB

english, 1982

7

Improvements in GaAs/plasma-deposited silicon nitride interface quality by predeposition GaAs surface treatment and postdeposition annealing

Clark, Marion D.

Journal:

Journal of Vacuum Science and Technology

Year:

1982

Language:

english

File:

PDF, 667 KB

english, 1982

8

Growth and photoluminescence characterization of a GaAsxP1−x/GaP strained-layer superlattice

Journal:

Journal of Vacuum Science and Technology

Year:

1982

Language:

english

File:

PDF, 631 KB

english, 1982

9

Electronic correlation and the Si(100) surface: Buckling versus nonbuckling

Redondo, Antonio

Journal:

Journal of Vacuum Science and Technology

Year:

1982

Language:

english

File:

PDF, 1.12 MB

english, 1982

10

Summary Abstract: Schottky barrier formation at Pd/Si(111) and V/Si(111) interfaces

Journal:

Journal of Vacuum Science and Technology

Year:

1982

Language:

english

File:

PDF, 519 KB

english, 1982

11

The electronic structure of Ge:GaAs(110) interfaces

Journal:

Journal of Vacuum Science and Technology

Year:

1982

Language:

english

File:

PDF, 1.64 MB

english, 1982

12

Self-consistent calculations in InAs–GaSb heterojunctions

Journal:

Journal of Vacuum Science and Technology

Year:

1982

Language:

english

File:

PDF, 626 KB

english, 1982

13

Theoretical investigation of hydrogen chemisorption on Ga-containing III–V compounds

Journal:

Journal of Vacuum Science and Technology

Year:

1982

Language:

english

File:

PDF, 806 KB

english, 1982

14

Sensitivity of capacitance diaphragm manometers to static magnetic fields

Journal:

Journal of Vacuum Science and Technology

Year:

1982

Language:

english

File:

PDF, 564 KB

english, 1982

15

Hg0.70Cd0.30Te anodic oxidation

Janousek, Bruce K.

Journal:

Journal of Vacuum Science and Technology

Year:

1982

Language:

english

File:

PDF, 636 KB

english, 1982

16

Summary Abstract: Ion-enhanced gas-surface chemistry

Journal:

Journal of Vacuum Science and Technology

Year:

1982

Language:

english

File:

PDF, 489 KB

english, 1982

17

Initial stages of anodic oxidation of GaAs

Journal:

Journal of Vacuum Science and Technology

Year:

1982

Language:

english

File:

PDF, 6.80 MB

english, 1982

18

Chemical bonding at the Si–metal interface: Si–Ni and Si–Cr

Journal:

Journal of Vacuum Science and Technology

Year:

1982

Language:

english

File:

PDF, 879 KB

english, 1982

19

Band structure of impurity-sheet-doped superlattice alloys

Hjalmarson, Harold P.

Journal:

Journal of Vacuum Science and Technology

Year:

1982

Language:

english

File:

PDF, 780 KB

english, 1982

20

An investigation of the interface electronics structure of Si–SiO2 junctions

Journal:

Journal of Vacuum Science and Technology

Year:

1982

Language:

english

File:

PDF, 756 KB

english, 1982

21

On the interface connection rules for effective-mass wave functions at an abrupt heterojunction between two semiconductors with different effective mass

Kroemer, Herbert

Journal:

Journal of Vacuum Science and Technology

Year:

1982

Language:

english

File:

PDF, 688 KB

english, 1982

22

Structural studies of Schottky barrier formation by means of surface EXAFS: Pd and Ag on Si(111) 7×7

Journal:

Journal of Vacuum Science and Technology

Year:

1982

Language:

english

File:

PDF, 894 KB

english, 1982

23

Giant replicate cell approach to the electronic structure calculation of graded interface regions

Journal:

Journal of Vacuum Science and Technology

Year:

1982

Language:

english

File:

PDF, 765 KB

english, 1982

24

Direct verification of hydrogen termination of the semiconducting diamond(111) surface

Waclawski, B. J.

Journal:

Journal of Vacuum Science and Technology

Year:

1982

Language:

english

File:

PDF, 715 KB

english, 1982

25

Interfacial reactions between Au and hydrogenated amorphous Si

Journal:

Journal of Vacuum Science and Technology

Year:

1982

Language:

english

File:

PDF, 4.10 MB

english, 1982

26

Physics and chemistry of semiconductor interfaces: Some future directions

Journal:

Journal of Vacuum Science and Technology

Year:

1982

Language:

english

File:

PDF, 1012 KB

english, 1982

27

Investigation of GaAs field-effect transistor interfaces using pulsed electron beam excitation

Journal:

Journal of Vacuum Science and Technology

Year:

1982

Language:

english

File:

PDF, 531 KB

english, 1982

28

Laser-induced order–disorder transition of the (100)InP surface

Journal:

Journal of Vacuum Science and Technology

Year:

1982

Language:

english

File:

PDF, 1.46 MB

english, 1982

29

Valence band and core lines investigation on the Ge–Au system by photoelectron spectroscopy with synchrotron radiation

Journal:

Journal of Vacuum Science and Technology

Year:

1982

Language:

english

File:

PDF, 731 KB

english, 1982

30

Summary Abstract: The (1×1) structure of Si(111) and C(111): Strong correlations in surface-state bands?

Journal:

Journal of Vacuum Science and Technology

Year:

1982

Language:

english

File:

PDF, 411 KB

english, 1982

31

Summary Abstract: Cation bonds in Hg1−xCdxTe

Silberman, J. A.

Journal:

Journal of Vacuum Science and Technology

Year:

1982

Language:

english

File:

PDF, 467 KB

english, 1982

32

Hg1−xCdxTe native oxide reduction by CVD SiO2

Rhiger, David R.

Journal:

Journal of Vacuum Science and Technology

Year:

1982

Language:

english

File:

PDF, 592 KB

english, 1982

33

Peroxide etch chemistry on 〈100〉In0.53Ga0.47As

Journal:

Journal of Vacuum Science and Technology

Year:

1982

Language:

english

File:

PDF, 767 KB

english, 1982

34

Observation of Ge-induced electronic states at the Ge:GaAs(110) interface by means of polarization-dependent UPS

Journal:

Journal of Vacuum Science and Technology

Year:

1982

Language:

english

File:

PDF, 1.19 MB

english, 1982

35

Summary Abstract: SEXAFS studies of surface chemistry on Si and Ge

Journal:

Journal of Vacuum Science and Technology

Year:

1982

Language:

english

File:

PDF, 365 KB

english, 1982

36

Summary Abstract: Are they really Schottky barriers after all?

Journal:

Journal of Vacuum Science and Technology

Year:

1982

Language:

english

File:

PDF, 653 KB

english, 1982

37

Erratum: Surface segregation and surface electronic structure of PtCu alloys: Dependence on atomic coordination [J. Vac. Sci. Technol. 18, 533 (1981)]

Journal:

Journal of Vacuum Science and Technology

Year:

1982

Language:

english

File:

PDF, 275 KB

english, 1982

38

Photoionization and thermal activation of compound semiconductor MOS interfaces and origin of interface states

Hasegawa, Hideki

Journal:

Journal of Vacuum Science and Technology

Year:

1982

Language:

english

File:

PDF, 823 KB

english, 1982

39

Refractory metal contacts to GaAs: Interface chemistry and Schottky-barrier formation

Journal:

Journal of Vacuum Science and Technology

Year:

1982

Language:

english

File:

PDF, 895 KB

english, 1982

40

Chemical control of recombination at grain boundaries and liquid interfaces: Electrical power and hydrogen generating photoelectrochemical cells

Journal:

Journal of Vacuum Science and Technology

Year:

1982

Language:

english

File:

PDF, 1.46 MB

english, 1982

41

Comparative LEED studies of AlxGa1−xAs(110) and GaAs(110)–Al(ϑ)

Journal:

Journal of Vacuum Science and Technology

Year:

1982

Language:

english

File:

PDF, 881 KB

english, 1982

42

Fermi-level pinning and chemical structure of InP–metal interfaces

Brillson, L. J.

Journal:

Journal of Vacuum Science and Technology

Year:

1982

Language:

english

File:

PDF, 1.08 MB

english, 1982

43

Theory of heterostructures: A reduced Hamiltonian method with evanescent states and transfer matrices

Chang, Yia-Chung

Journal:

Journal of Vacuum Science and Technology

Year:

1982

Language:

english

File:

PDF, 827 KB

english, 1982

44

Thermal removal of surface carbon from GaAs substrate used in molecular beam epitaxy

Journal:

Journal of Vacuum Science and Technology

Year:

1982

Language:

english

File:

PDF, 1.63 MB

english, 1982

45

Modeling ion beam milling

Youngner, D. W.

Journal:

Journal of Vacuum Science and Technology

Year:

1982

Language:

english

File:

PDF, 2.08 MB

english, 1982

46

Bound and resonant surface states at the (110) surfaces of AlSb, AlAs, and AlP

Beres, Richard P.

Journal:

Journal of Vacuum Science and Technology

Year:

1982

Language:

english

File:

PDF, 628 KB

english, 1982

47

Channeling measurements of lattice disorder at the GaAs–InAs(100) heterojunction

Williams, R. Stanley

Journal:

Journal of Vacuum Science and Technology

Year:

1982

Language:

english

File:

PDF, 716 KB

english, 1982

48

Estimation of surface charge densities for low-energy atom diffraction

Journal:

Journal of Vacuum Science and Technology

Year:

1982

Language:

english

File:

PDF, 719 KB

english, 1982

49

Surface donors and acceptors on GaAs and InP exposed to oxygen

Journal:

Journal of Vacuum Science and Technology

Year:

1982

Language:

english

File:

PDF, 905 KB

english, 1982

50

Photoemission and photon-stimulated ion desorption studies of diamond(111): Hydrogen

Journal:

Journal of Vacuum Science and Technology

Year:

1982

Language:

english

File:

PDF, 742 KB

english, 1982

51

Effective-mass theory for electrons in heterostructures

Journal:

Journal of Vacuum Science and Technology

Year:

1982

Language:

english

File:

PDF, 778 KB

english, 1982

52

Summary Abstract: Transition metal silicides: Trends in the bonding in the bulk and at the interface

Grunthaner, P. J.

Journal:

Journal of Vacuum Science and Technology

Year:

1982

Language:

english

File:

PDF, 561 KB

english, 1982

53

Ion–surface interactions during vapor phase crystal growth by sputtering, MBE, and plasma-enhanced CVD: Applications to semiconductors

Journal:

Journal of Vacuum Science and Technology

Year:

1982

Language:

english

File:

PDF, 3.07 MB

english, 1982

54

Polar-on-nonpolar epitaxy: Sublattice ordering in the nucleation and growth of GaP on Si(211) surfaces

Wright, Steven L.

Journal:

Journal of Vacuum Science and Technology

Year:

1982

Language:

english

File:

PDF, 3.02 MB

english, 1982

55

Similarity in interactions between metal–semiconductor and metal–metal interfaces

Journal:

Journal of Vacuum Science and Technology

Year:

1982

Language:

english

File:

PDF, 1.79 MB

english, 1982

56

Mott insulator model of the Si(111)–(2×1) surface

Redondo, Antonio

Journal:

Journal of Vacuum Science and Technology

Year:

1982

Language:

english

File:

PDF, 806 KB

english, 1982

57

Crystallographic relationships and interfacial properties of Ag on GaAs(100) surfaces

Journal:

Journal of Vacuum Science and Technology

Year:

1982

Language:

english

File:

PDF, 1.55 MB

english, 1982

58

Interface electronic structure of Pb on GaAs(001)

van der Veen, J. F.

Journal:

Journal of Vacuum Science and Technology

Year:

1982

Language:

english

File:

PDF, 1.01 MB

english, 1982

59

Metal–GaSe and metal–InP interfaces: Schottky barrier formation and interfacial reactions

Williams, R. H.

Journal:

Journal of Vacuum Science and Technology

Year:

1982

Language:

english

File:

PDF, 1005 KB

english, 1982

60

Structural characterization of the interfacial reactions between palladium and gallium arsenide

Journal:

Journal of Vacuum Science and Technology

Year:

1982

Language:

english

File:

PDF, 1.78 MB

english, 1982

61

Analysis of electrical and optical properties of insulating film–GaAs interfaces using MESFET-type structures

Journal:

Journal of Vacuum Science and Technology

Year:

1982

Language:

english

File:

PDF, 830 KB

english, 1982

62

Summary Abstract: The onset of intersubband scattering in a two-dimensional electron system

Störmer, H. L.

Journal:

Journal of Vacuum Science and Technology

Year:

1982

Language:

english

File:

PDF, 441 KB

english, 1982

63

Light scattering study of electrons confined at Ge/GaAs interfaces

Journal:

Journal of Vacuum Science and Technology

Year:

1982

Language:

english

File:

PDF, 627 KB

english, 1982

64

Electronic structure of GaAsxP1−x/GaP strained-layer superlattices with x

Journal:

Journal of Vacuum Science and Technology

Year:

1982

Language:

english

File:

PDF, 742 KB

english, 1982

65

Study of space–charge effect by computer

Sasaki, Tateaki

Journal:

Journal of Vacuum Science and Technology

Year:

1982

Language:

english

File:

PDF, 1.48 MB

english, 1982

66

Electronic structure of the π-bonded chain model and the nonbuckled antiferromagnetic insulator model for the Si(111) surface

Northrup, John E.

Journal:

Journal of Vacuum Science and Technology

Year:

1982

Language:

english

File:

PDF, 787 KB

english, 1982

67

Wavelength dependence of laser-enhanced oxidation of silicon

Journal:

Journal of Vacuum Science and Technology

Year:

1982

Language:

english

File:

PDF, 869 KB

english, 1982

68

High resolution trilevel resist

Journal:

Journal of Vacuum Science and Technology

Year:

1982

Language:

english

File:

PDF, 2.17 MB

english, 1982

69

Theory of the electronic and atomic structure of Si(111): Surface spin-polarization effects

Journal:

Journal of Vacuum Science and Technology

Year:

1982

Language:

english

File:

PDF, 1.51 MB

english, 1982

70

Electronic structure of GaP–AlP(100) superlattices

Journal:

Journal of Vacuum Science and Technology

Year:

1982

Language:

english

File:

PDF, 588 KB

english, 1982

71

Localized and delocalized charge transfer during adsorption on semiconductors: Experiments and cluster calculations on the prototype surface ZnO(101̄0)

Journal:

Journal of Vacuum Science and Technology

Year:

1982

Language:

english

File:

PDF, 1.40 MB

english, 1982

72

Structural model of III–V compound semiconductor Schottky barriers

Journal:

Journal of Vacuum Science and Technology

Year:

1982

Language:

english

File:

PDF, 1.32 MB

english, 1982

73

Summary Abstract: Mott insulator model of the Si(111)-(2×1) surface

Redondo, Antonio

Journal:

Journal of Vacuum Science and Technology

Year:

1982

Language:

english

File:

PDF, 443 KB

english, 1982

74

Interaction of oxygen with silicon d-metal interfaces: A photoemission investigation

Journal:

Journal of Vacuum Science and Technology

Year:

1982

Language:

english

File:

PDF, 842 KB

english, 1982

75

Summary Abstract: (1×1) surface unit cell on Ge cleaved at liquid helium temperatures

Journal:

Journal of Vacuum Science and Technology

Year:

1982

Language:

english

File:

PDF, 360 KB

english, 1982

76

Summary Abstract: Monte Carlo simulation of growth and nature of binary and pseudobinary model systems grown via molecular beam epitaxy

Journal:

Journal of Vacuum Science and Technology

Year:

1982

Language:

english

File:

PDF, 514 KB

english, 1982

77

Measurement of semiconductor–insulator interface states by constant-capacitance deep-level transient spectroscopy

Journal:

Journal of Vacuum Science and Technology

Year:

1982

Language:

english

File:

PDF, 2.12 MB

english, 1982

78

Summary Abstract: Thermodynamics of overlayer ordering and epitaxy

Lagally, Max G.

Journal:

Journal of Vacuum Science and Technology

Year:

1982

Language:

english

File:

PDF, 649 KB

english, 1982

79

Summary Abstract: The Si(111)/Mo interface as studied with synchrotron radiation photoemission and Auger electron spectroscopies

Journal:

Journal of Vacuum Science and Technology

Year:

1982

Language:

english

File:

PDF, 402 KB

english, 1982

80

Studies on silicon-based CdS and ZnS hybrid systems for the utility of these films in solar cells

Abou-elfotouh, F.

Journal:

Journal of Vacuum Science and Technology

Year:

1982

Language:

english

File:

PDF, 473 KB

english, 1982

81

Surface processes controlling MBE heterojunction formation: GaAs(100)/Ge interfaces

Bauer, Robert S.

Journal:

Journal of Vacuum Science and Technology

Year:

1982

Language:

english

File:

PDF, 1.29 MB

english, 1982

82

Influence of substrate temperature on electron mobility in normal and inverted single period modulation doped AlxGa1−xAs/GaAs heterojunctions

Drummond, T. J.

Journal:

Journal of Vacuum Science and Technology

Year:

1982

Language:

english

File:

PDF, 1.64 MB

english, 1982