Volume 42; Issue 1-3

Materials Science and Engineering: B

Volume 42; Issue 1-3

1

Foreword

Javier Piqueras, Paloma Fernández, Bianchi Méndez

Journal:

Materials Science and Engineering: B

Year:

1996

Language:

english

File:

PDF, 63 KB

english, 1996

2

Characterization of semiconductor laser diodes by beam injection techniques

Journal:

Materials Science and Engineering: B

Year:

1996

Language:

english

File:

PDF, 819 KB

english, 1996

3

EBIC defect characterisation: state of understanding and problems of interpretation

M. Kittler, W. Seifert

Journal:

Materials Science and Engineering: B

Year:

1996

Language:

english

File:

PDF, 709 KB

english, 1996

4

EBIC studies of grain boundaries

D.B. Holt, B. Raza, A. Wojcik

Journal:

Materials Science and Engineering: B

Year:

1996

Language:

english

File:

PDF, 1.16 MB

english, 1996

5

Conventional EBIC versus MOS/EBIC study of electrically active defects in Si and SOI

I. Bondarenko, H. Kirk, O. Kononchuk, G. Rozgonyi

Journal:

Materials Science and Engineering: B

Year:

1996

Language:

english

File:

PDF, 878 KB

english, 1996

6

Cathodoluminescence microscopy of doped GaSb crystals

B. Méndez, J. Piqueras, P.S. Dutta, E. Dieguez

Journal:

Materials Science and Engineering: B

Year:

1996

Language:

english

File:

PDF, 527 KB

english, 1996

7

Study of misfit dislocations by EBIC, CL and HRTEM in GaAs/InGaAs lattice-strained multi-quantum well p-i-n solar cells

M. Mazzer, E. Grünbaum, K.W.J. Barnham, J. Barnes, P.R. Griffin, D.B. Holt, J.L. Hutchison, A.G. Norman, J.P.R. David, J.S. Roberts, R. Grey

Journal:

Materials Science and Engineering: B

Year:

1996

Language:

english

File:

PDF, 1.28 MB

english, 1996

8

E-beam tomography of planar semiconductor structures

E.I. Rau, E.B. Yakimov

Journal:

Materials Science and Engineering: B

Year:

1996

Language:

english

File:

PDF, 561 KB

english, 1996

9

Effect of hydrogenation on the properties of extended defects in semiconductors

A. Zozime, J. Castaing

Journal:

Materials Science and Engineering: B

Year:

1996

Language:

english

File:

PDF, 718 KB

english, 1996

10

Behaviour of an amphoteric defect under standard DLTS and beam injection DLTS, respectively

K. Knobloch, H. Alexander

Journal:

Materials Science and Engineering: B

Year:

1996

Language:

english

File:

PDF, 409 KB

english, 1996

11

A review of ion beam induced charge microscopy for integrated circuit analysis

Journal:

Materials Science and Engineering: B

Year:

1996

Language:

english

File:

PDF, 1.32 MB

english, 1996

12

Temperature dependent EBIC and deep level transient spectroscopy investigation of different types of misfit-dislocations at MOVPE grown GaAs/InGaAs/GaAs-single-quantum wells

L. Panepinto, U. Zeimer, W. Seifert, M. Seibt, F. Bugge, M. Weyers, W. Schröter

Journal:

Materials Science and Engineering: B

Year:

1996

Language:

english

File:

PDF, 543 KB

english, 1996

13

STM-based luminescence spectroscopy on single quantum dots

M.-E. Pistol, D. Hessman, J. Lindahl, L. Montelius, L. Samuelson

Journal:

Materials Science and Engineering: B

Year:

1996

Language:

english

File:

PDF, 648 KB

english, 1996

14

Scanning probe microscopy for 2-D semiconductor dopant profiling and device failure analysis

A.K. Henning, T. Hochwitz

Journal:

Materials Science and Engineering: B

Year:

1996

Language:

english

File:

PDF, 1.41 MB

english, 1996

15

Modeling electrostatic scanning force microscopy of semiconductors

Journal:

Materials Science and Engineering: B

Year:

1996

Language:

english

File:

PDF, 524 KB

english, 1996

16

Deposition parameters and surface topography of a-Si:H thin films obtained by the RF glow discharge process

J. Ebothe, P. Roca i Cabarrocas, C. Godet, B. Equer

Journal:

Materials Science and Engineering: B

Year:

1996

Language:

english

File:

PDF, 484 KB

english, 1996

17

Theoretical aspects of the minority carrier recombination at dislocations in semiconductors

Jean-Louis Farvacque

Journal:

Materials Science and Engineering: B

Year:

1996

Language:

english

File:

PDF, 1.27 MB

english, 1996

18

Friction force microscopy characterization of semiconductor heterostructures

J. Tamayo, R. García

Journal:

Materials Science and Engineering: B

Year:

1996

Language:

english

File:

PDF, 625 KB

english, 1996

19

Spatially resolved deep level transient spectroscopy using a scanning tunneling microscope

K. Maeda, M. Uota, Y. Mera

Journal:

Materials Science and Engineering: B

Year:

1996

Language:

english

File:

PDF, 741 KB

english, 1996

20

Lateral variations of the quantum well confinement energy reflected by SEM-cathodoluminescence

U. Jahn, J. Menniger, R. Hey, B. Jenichen, E. Runge, H.T. Grahn

Journal:

Materials Science and Engineering: B

Year:

1996

Language:

english

File:

PDF, 1.19 MB

english, 1996

21

Cathodoluminescence and EBIC study on misfit dislocations in SiGe/Si heterostructure

T. Sekiguchi, K. Sumino, Z.J. Radzimski, G.A. Rozgonyi

Journal:

Materials Science and Engineering: B

Year:

1996

Language:

english

File:

PDF, 512 KB

english, 1996

22

Application of spectrally resolved scanning photoluminescence to assess relaxation processes of InGaAs and InAlAs layers strained in compression and tension

S.K. Krawczyk, M. Gendry, C. Klingelhöfer, T. Venet, M. Buchheit, R. Blanchet, G. Hollinger

Journal:

Materials Science and Engineering: B

Year:

1996

Language:

english

File:

PDF, 989 KB

english, 1996

23

LBIC characterization of LPE Si layers deposited on multicrystalline Si sub strates

M. Stemmer, G. Wagner, S. Martinuzzi

Journal:

Materials Science and Engineering: B

Year:

1996

Language:

english

File:

PDF, 488 KB

english, 1996

24

Comparison among lifetime techniques for the detection of transition metal contamination

M.L. Polignano, F. Cazzaniga, A. Sabbadini, G. Queirolo, A. Cacciato, A. Di Bartolo

Journal:

Materials Science and Engineering: B

Year:

1996

Language:

english

File:

PDF, 781 KB

english, 1996

25

Structural and electrical investigations of silicon wafer bonding interfaces

Mourad Benamara, André Rocher, Pierre Sopéna, Alain Claverie, Angéline Laporte, Gérard Sarrabayrouse, Lionel Lescouzères, André Peyre-Lavigne

Journal:

Materials Science and Engineering: B

Year:

1996

Language:

english

File:

PDF, 604 KB

english, 1996

26

Energy-loss dependence of inelastic interactions between high-energy electrons and semiconductors: a model to determine the spatial distribution of electron-hole pairs generation

M.J. Romero, D. Araújo, R. García

Journal:

Materials Science and Engineering: B

Year:

1996

Language:

english

File:

PDF, 397 KB

english, 1996

27

SCH laser recombination rate from EBIC profiles

M.J. Romero, D. Araújo, R. García

Journal:

Materials Science and Engineering: B

Year:

1996

Language:

english

File:

PDF, 437 KB

english, 1996

28

Simulation of recombination contrast of extended defects in the modulated EBIC

V.V. Sirotkin, E.B. Yakimov, S.I. Zaitsev

Journal:

Materials Science and Engineering: B

Year:

1996

Language:

english

File:

PDF, 374 KB

english, 1996

29

Monte carlo simulation of the EBIC grain boundary contrast in semiconductors

N. Tabet, M. Ledra

Journal:

Materials Science and Engineering: B

Year:

1996

Language:

english

File:

PDF, 350 KB

english, 1996

30

Study of copper aggregations at dislocations in Gaas

H.S. Leipner, R. Scholz, F. Syrowatka, H. Uniewski, J. Schreiber

Journal:

Materials Science and Engineering: B

Year:

1996

Language:

english

File:

PDF, 609 KB

english, 1996

31

Characterization of MQW heterostructures with acoustooptical cathodoluminescence spectrometer

A.A. Chelny, V.A. Gorbylev, V.L. Denotkin, S.M. Kopylov, V.G. Krigel, A.V. Tarasov

Journal:

Materials Science and Engineering: B

Year:

1996

Language:

english

File:

PDF, 297 KB

english, 1996

32

Cl and EBIC analysis of a p+ -InGaAs/n-InGaAs/n-InP/n+ -InP heterostructure

A. Boudjani, B. Sieber, F. Cleton, A. Rudra

Journal:

Materials Science and Engineering: B

Year:

1996

Language:

english

File:

PDF, 820 KB

english, 1996

33

A new analytical model for cathodoluminescence emission as a function of the beam energy in GaAs and InP materials

Journal:

Materials Science and Engineering: B

Year:

1996

Language:

english

File:

PDF, 443 KB

english, 1996

34

Detection of junction failures and other defects in silicon and III–v devices using the LBIC technique in lateral configuration

M. Acciarri, S. Binetti, M. Garavaglia, S. Pizzini

Journal:

Materials Science and Engineering: B

Year:

1996

Language:

english

File:

PDF, 431 KB

english, 1996

35

Investigation of deep-level defects in semi-insulating GaAs and InP by analysis of photo-induced current transients

P. Kamiński, M. Pawłowski, R. Ćwirko, M. Palczewska, R. Kozłowski

Journal:

Materials Science and Engineering: B

Year:

1996

Language:

english

File:

PDF, 359 KB

english, 1996

36

Residual polishing damage and surface quality of commercial InP wafers: A scanning PL study

Z. Laczik, G.R. Booker, A. Mowbray

Journal:

Materials Science and Engineering: B

Year:

1996

Language:

english

File:

PDF, 1.05 MB

english, 1996

37

A study of dislocations in GaAs:Te using electron and optical beams

P. Martín, C. Frigeri, J. Jiménez, J. Weyher

Journal:

Materials Science and Engineering: B

Year:

1996

Language:

english

File:

PDF, 559 KB

english, 1996

38

Cathodoluminescence study of GaN epitaxial layers

A. Cremades, J. Piqueras, C. Xavier, T. Monteiro, E. Pereira, B.K. Meyer, D.M. Hofmann, S. Fischer

Journal:

Materials Science and Engineering: B

Year:

1996

Language:

english

File:

PDF, 543 KB

english, 1996

39

EBIC study on the electrical activity of stacking faults in silicon

T. Sekiguchi, B. Shen, T. Watanabe, K. Sumino

Journal:

Materials Science and Engineering: B

Year:

1996

Language:

english

File:

PDF, 560 KB

english, 1996

40

Investigation of the surface of P-implanted LPCVD silicon films

Rodica Plugaru, E. Vasile, C. Cobianu, D. Dascalu

Journal:

Materials Science and Engineering: B

Year:

1996

Language:

english

File:

PDF, 399 KB

english, 1996

41

A study of the interaction of electron beam generated excess charge-carriers with a Si/SiGe/Si heterostructure

B. Sieber, M. Kittler, A. Miri, J. Laerz

Journal:

Materials Science and Engineering: B

Year:

1996

Language:

english

File:

PDF, 515 KB

english, 1996

42

Surface damage in processed silicon

A. Castaldini, A. Cavallini, A. Poggi, E. Susi

Journal:

Materials Science and Engineering: B

Year:

1996

Language:

english

File:

PDF, 617 KB

english, 1996

43

Application of scanning deep level transient spectroscopy for characterisation of multicrystalline silicon

K. Knobloch, W. Seifert, M. Kittler

Journal:

Materials Science and Engineering: B

Year:

1996

File:

PDF, 522 KB

1996

44

EBIC study of recombination activity of oxygen precipitation related defects in si

W. Seifert, M, Kittler, J. Vanhellemont

Journal:

Materials Science and Engineering: B

Year:

1996

Language:

english

File:

PDF, 643 KB

english, 1996

45

LBIC investigation of impurity-dislocation interaction in FZ silicon wafers

I. Périchaud, J.J. Simon, S. Martinuzzi

Journal:

Materials Science and Engineering: B

Year:

1996

Language:

english

File:

PDF, 525 KB

english, 1996

46

Reconstruction of recombination properties of extended defects in Si

I. Bondarenko, O. Kononchuk, V. Sirotkin, E. Yakimov

Journal:

Materials Science and Engineering: B

Year:

1996

Language:

english

File:

PDF, 428 KB

english, 1996

47

Cathodoluminescence study of the effect of annealing in HgI2 vapor on the defect structure of CdTe

G. Panin, J. Piqueras, N.V. Sochinskii, E. Dieguez

Journal:

Materials Science and Engineering: B

Year:

1996

Language:

english

File:

PDF, 807 KB

english, 1996

48

SEM CL studies on polar glide dislocations in CdTe

H. Uniewski, J. Schreiber, S. Hildebrandt, H.S. Leipner

Journal:

Materials Science and Engineering: B

Year:

1996

Language:

english

File:

PDF, 905 KB

english, 1996

49

Cathodoluminescence dependence upon irradiation time

S. Achour, A. Harabi, N. Tabet

Journal:

Materials Science and Engineering: B

Year:

1996

Language:

english

File:

PDF, 340 KB

english, 1996

50

Dose effects of cathodoluminescence in SiO2 layers on Si

M. Goldberg, A. Trukhin, H.-J. Fitting

Journal:

Materials Science and Engineering: B

Year:

1996

Language:

english

File:

PDF, 344 KB

english, 1996

51

Near band gap photoreflectance studies in CdTe, CdTe:V and cdte:ge crystals

U. Pal, J.L. Herrera Pérez, J. Piqueras, E. Dieguéz

Journal:

Materials Science and Engineering: B

Year:

1996

Language:

english

File:

PDF, 517 KB

english, 1996

52

Compensation and deep levels in II–VI compounds

A. Castaldini, A. Cavallini, B. Fraboni, L. Polenta, P. Fernandez, J. Piqueras

Journal:

Materials Science and Engineering: B

Year:

1996

Language:

english

File:

PDF, 357 KB

english, 1996

53

Investigation of the low-temperature CL contrasts of dislocations in compound semiconductors

J. Schreiber, S. Hildebrandt, H. Uniewski, V. Bechstein

Journal:

Materials Science and Engineering: B

Year:

1996

Language:

english

File:

PDF, 808 KB

english, 1996

54

Properties and structure of antiphase boundaries in GaAs/Ge solar cells

D.B. Holt, C. Hardingham, L. Lazzarini, L. Nasi, C. Zanotti-Fregonara, G. Salviati, M. Mazzer

Journal:

Materials Science and Engineering: B

Year:

1996

Language:

english

File:

PDF, 672 KB

english, 1996

55

Effect of irradiation in sem on electrical properties of silicon

O.V. Feklisova, E.B. Yakimov, N.A. Yarykin

Journal:

Materials Science and Engineering: B

Year:

1996

Language:

english

File:

PDF, 333 KB

english, 1996

56

Images of grain boundaries in polycrystalline silicon solar cells by electron and ion beam induced charge collection

C. Donolato, R. Nipoti, D. Govoni, G.P. Egeni, V. Rudello, P. Rossi

Journal:

Materials Science and Engineering: B

Year:

1996

Language:

english

File:

PDF, 641 KB

english, 1996