Volume 48; Issue 3

Materials Science and Engineering: B

Volume 48; Issue 3
3

Some effects of phosphorus doping in SiC:H films prepared using ECR-CVD

R. Ji, S.F. Yoon, J. Ahn, W.I. Milne
Journal:
Materials Science and Engineering: B
Year:
1997
Language:
english
File:
PDF, 524 KB
english, 1997
4

A MOS structure temperature characterization

A. Bouzidi, A. Boudissa, Z. Benamara, M. Anani, H. Sehil, B. Akkal
Journal:
Materials Science and Engineering: B
Year:
1997
Language:
english
File:
PDF, 301 KB
english, 1997
5

GaN thin films produced by pulsed laser deposition

D. Cole, J.G. Lunney, F.P. Logue, J.F. Donegan, J.M.D. Coey
Journal:
Materials Science and Engineering: B
Year:
1997
Language:
english
File:
PDF, 396 KB
english, 1997
8

ZnGeP2 synthesis and growth from melt

G.A. Verozubova, A.I. Gribenyukov, V.V. Korotkova, M.P. Ruzaikin
Journal:
Materials Science and Engineering: B
Year:
1997
Language:
english
File:
PDF, 533 KB
english, 1997
12

Doping of (Bi,Pb)-2223 with metal oxides

D. Göhring, M. Vogt, W. Wischert, S. Kemmler-Sack
Journal:
Materials Science and Engineering: B
Year:
1997
Language:
english
File:
PDF, 935 KB
english, 1997
14

Microwave dielectric measurements of ferroelectrics up to 800 K

P. Dubernet, J.L. Miane, J. Ravez
Journal:
Materials Science and Engineering: B
Year:
1997
Language:
english
File:
PDF, 658 KB
english, 1997
16

Pb/Zn/Pd ohmic contacts to p-GaP

Fujia Zhang, Dejiang Zhang, Baojun Li, Enke Liu, Fengmin Liu, Runjin Gan
Journal:
Materials Science and Engineering: B
Year:
1997
Language:
english
File:
PDF, 427 KB
english, 1997