Volume 67; Issue 1-2

Materials Science and Engineering: B

Volume 67; Issue 1-2

1

Editorial

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 35 KB

english, 1999

2

Theory of the (3×2) reconstruction of the GaAs(001) surface

N.A Modine, Efthimios Kaxiras

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 215 KB

english, 1999

3

Nucleation and growth mechanisms during MBE of III–V compounds

B.A Joyce, D.D Vvedensky, G.R Bell, J.G Belk, M Itoh, T.S Jones

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 3.00 MB

english, 1999

4

Semiconductor alloys for monolithic integration with Si microelectronics

N Moll, Tairan Wang, Kyeongjae Cho, J.D Joannopoulos

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 232 KB

english, 1999

5

Thermodynamic and kinetic mechanisms in self-assembled quantum dot formation

Albert-László Barabási

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 203 KB

english, 1999

6

Equilibrium size distributions of clusters during strained epitaxial growth

G Medeiros-Ribeiro, T.I Kamins, D.A.A Ohlberg, R.Stanley Williams

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 547 KB

english, 1999

7

TEM characterization of single and multiple InGaAs/GaAs quantum wires grown by metal–organic vapor phase epitaxy on V-grooved substrates

A Taurino, M Catalano, L Vasanelli, A Passaseo, R Rinaldi, R Cingolani

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 1.25 MB

english, 1999

8

Selective versus non-selective growth of Si and SiGe

W.B De Boer, D Terpstra, J.G.M Van Berkum

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 373 KB

english, 1999

9

Dislocation dynamics in relaxed graded composition semiconductors

E.A Fitzgerald, A.Y Kim, M.T Currie, T.A Langdo, G Taraschi, M.T Bulsara

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 265 KB

english, 1999

10

Misfit dislocations in (001) semiconductor heterostructures grown by epitaxy

André Rocher, Etienne Snoeck

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 931 KB

english, 1999

11

Defect formation in SiGe/Si structures grown on GaAs by CVD techniques utilizing a Si:H template layer

T Feng, M Al-Sheikhly, A Christou

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 435 KB

english, 1999

12

Novel interactions of supported clusters: contact epitaxy

Mark Yeadon, Judith C Yang, Mai Ghaly, Robert S Averback, J Murray Gibson

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 328 KB

english, 1999

13

High temperature growth of AlN by plasma-enhanced molecular beam epitaxy

Z.Y Fan, G Rong, J Browning, N Newman

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 519 KB

english, 1999

14

Characteristics of MBE-grown heterostructure HgCdTe/CdTe/Si materials and planar photovoltaic devices

R Ashokan, S Sivananthan

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 495 KB

english, 1999