Volume 117-118

Materials Science Forum

Volume 117-118

1

Non-Equilibrium Point Defects and Diffusion in GaAs and Related Compounds

Gösele, U.M., Tan, T.Y., Uematsu, M., Wada, K.

Journal:

Materials Science Forum

Year:

1993

File:

PDF, 432 KB

1993

2

Neutron Transmutation Doping of Isotopically Controlled Ge

Itoh, K., Hansen, W.L., Haller, Eugene E., Farmer, J.W., Ozhogin, V.I.

Journal:

Materials Science Forum

Year:

1993

File:

PDF, 347 KB

1993

3

Thermal Process Dependence of Chromium Donor/Acceptor in Silicon

Takiyama, M., Ohtsuka, Shigehiro, Tachimori, M.

Journal:

Materials Science Forum

Year:

1993

File:

PDF, 335 KB

1993

4

Te-Related Donor States in AlxGa1-xAs

Kang, J., Huang, Q., Hoshikawa, K., Fukuda, T.

Journal:

Materials Science Forum

Year:

1993

File:

PDF, 364 KB

1993

5

Self-Compensation in P, As, and N Doped ZnSe

Chadi, D.J., Troullier, N.

Journal:

Materials Science Forum

Year:

1993

Language:

english

File:

PDF, 345 KB

english, 1993

6

Monoenergetic Positron Beam Study of Heavily Si-Doped GaAs Grown by MOCVD Using Tertiarybutylarsine

Chichibu, Shigefusa F., Iwai, A., Nakahara, Yuko, Matsumoto, S., Higuchi, Hiroyuki, Wei, Long, Tanigawa, Shoichiro

Journal:

Materials Science Forum

Year:

1993

File:

PDF, 294 KB

1993

7

Characterization of Defects in As-Grown and Electron-Irradiated 3C-SiC Epilayers by Using Slow Positrons

Itho, H., Yoshikawa, M., Nashiyama, I., Wei, Long, Tanigawa, Shoichiro, Misawa, S., Okumura, H., Yoshida, S.

Journal:

Materials Science Forum

Year:

1993

File:

PDF, 382 KB

1993

8

Donor Concentration Dependence of GaP Luminescence

Monteiro, Teresa, Pereira, E., Domingues-Adame, F., Piqueras, J.

Journal:

Materials Science Forum

Year:

1993

File:

PDF, 297 KB

1993

9

Carbon-Oxygen Complexes and Oxygen Precipitation in Silicon Crystals Observed by Low-Temperature Infrared Absorption

Shirakawa, Y., Yamada-Kaneta, Hiroshi, Ogawa, Tomoya

Journal:

Materials Science Forum

Year:

1993

File:

PDF, 401 KB

1993

10

Vacancies in Semiconductors Characterized by Slow Positron and Their Effect on Electrical Properties

Journal:

Materials Science Forum

Year:

1993

File:

PDF, 491 KB

1993

11

Shallow-Deep Instability of a Hydrogenic Impurity in Quantum Wells

Shinozuka, Yuzo

Journal:

Materials Science Forum

Year:

1993

File:

PDF, 316 KB

1993

12

Piezo-Magneto-Resistivity of Si-B in the Hopping Regime

Stöhr, M., Janiszewski, P., Chroboczek, J.A.

Journal:

Materials Science Forum

Year:

1993

File:

PDF, 277 KB

1993

13

Extremely Heavy Doping of Carbon in GaAs and InGaAs

Konagai, Makoto

Journal:

Materials Science Forum

Year:

1993

File:

PDF, 404 KB

1993

14

Dispersion in Bound Exciton Binding Energy via Coupling to Interface Localization Potentials in GaAs/AIGaAs Quantum Wells

Harris, C.I., Monemar, Bo, Holtz, P.O., Sundaram, M., Merz, J.L., Gossard, A.C.

Journal:

Materials Science Forum

Year:

1993

File:

PDF, 368 KB

1993

15

Multiplicity and Lattice Relaxation of DX Center in AlGaAs: Si Studied by Electron Emission Spectra under Pressure

Takarabe, K., Ashizawa, H., Minomura, S., Kato, H., Watanabe, Y., Matsuda, K.

Journal:

Materials Science Forum

Year:

1993

File:

PDF, 366 KB

1993

16

Photoluminescence Study of Yb-Doped InP under Low Temperature and Pressure

Takarabe, K., Minomura, S., Taguchi, Akihito, Takahei, Kenichiro

Journal:

Materials Science Forum

Year:

1993

File:

PDF, 262 KB

1993

17

Formation of Oxygen Clusters in Quenched Cz- and MCz-Si Crystals

Ikari, Atsushi, Haga, Hiroyo, Yoda, O., Uedono, Akira, Ujihira, Yusuke

Journal:

Materials Science Forum

Year:

1993

File:

PDF, 382 KB

1993

18

Shallow Donor Bound State in an AlAs/GaAs Quantum Well with - X Mixing

de Andrada e Silva, E.A., Wang, D., Cunha Lima, I.C. da

Journal:

Materials Science Forum

Year:

1993

File:

PDF, 287 KB

1993

19

Impurities and Point Defects in GaAs and AlAs Grown by Atomic Layer Epitaxy

Ikuta, K., Yokoyama, Haruki, Inoue, Naohisa

Journal:

Materials Science Forum

Year:

1993

File:

PDF, 278 KB

1993

20

Accurate Evaluation Techniques of the Interstitial Oxygen Concentrations in the Oxygen Precipitated and the Low-Resistivity CZ-Si Crystals

Kitagawara, Y., Takamizawa, K., Takenaka, Takao

Journal:

Materials Science Forum

Year:

1993

File:

PDF, 466 KB

1993

21

Electrical Characteristics of B Doped Ge Film Epitaxially Grown on Si Using Ultraclean Chemical Vapor Deposition

Gotoh, Koji, Murota, J., Ono, S.

Journal:

Materials Science Forum

Year:

1993

File:

PDF, 303 KB

1993

22

Anti-Stokes Photoluminescence Related to the Deep Donor States in Si Double δ-Doped AlxGa1-xAs

Junnarkar, M.R., Yamaguchi, E., Saku, T.

Journal:

Materials Science Forum

Year:

1993

File:

PDF, 412 KB

1993

23

The Study of Defects Induced by the Implantation of O Ions into GaAs by a Slow Positron Beam

Fujii, S., Wei, Long, Tanigawa, Shoichiro

Journal:

Materials Science Forum

Year:

1993

File:

PDF, 354 KB

1993

24

Far-Infrared Magneto-Absorption of Donors in the Epitaxial ZnSe Layers on GaAs

Komeda, R., Nakata, H., Ohyama, T.

Journal:

Materials Science Forum

Year:

1993

File:

PDF, 293 KB

1993

25

Infrared Absorption Lines in Hydrogen-Plasma Treated Se-Doped GaAs

Svensson, J.H., Weber, Joerg

Journal:

Materials Science Forum

Year:

1993

Language:

english

File:

PDF, 372 KB

english, 1993

26

Hydrogen-Induced Isotope Shift of Dipole Transitions of Shallow Donors in Silicon

Hartung, J., Weber, Joerg

Journal:

Materials Science Forum

Year:

1993

File:

PDF, 370 KB

1993

27

Localized-Pair Recombination Nature of Visible Luminescence from Anodized Porous-Si

Mochizuki, Yasunori, Mizuta, M.

Journal:

Materials Science Forum

Year:

1993

File:

PDF, 368 KB

1993

28

Effect of Hydrogen Passivation on Lightly n-Doped GaAs

Chen, Chao Jung, Chang, Yu Huai, Chen, T.C., Li, S.H., Chen, Yun Fa, Lin, H.H.

Journal:

Materials Science Forum

Year:

1993

File:

PDF, 263 KB

1993

29

Carbon and Silicon Impurity Centers in GaAs

Journal:

Materials Science Forum

Year:

1993

File:

PDF, 499 KB

1993

30

Optical Absorption Lines in Heat-Treated GaAs

Suezawa, Masashi, Sumino, Koji

Journal:

Materials Science Forum

Year:

1993

File:

PDF, 326 KB

1993

31

High-Resolution EPR Spectroscopy of the Si-NL 10 Thermal Donor

Gregorkiewicz, T., Bekman, H.H.P.Th., Ammerlaan, C.A.J., Knap, W., Brunel, L.C., Martinez, G.

Journal:

Materials Science Forum

Year:

1993

File:

PDF, 206 KB

1993

32

Isotopic Dependence of Near-Band-Gap Luminescence from Germanium

Davies, Gordon, Lightowlers, Edward C., Ozhogin, V.I., Itoh, K., Hansen, W.L., Haller, Eugene E.

Journal:

Materials Science Forum

Year:

1993

Language:

english

File:

PDF, 332 KB

english, 1993

33

Characterization of Excimer Laser Annealing of Arsenic Implanted Silicon

Akane, T., Matsumoto, S., Mizushima, I.

Journal:

Materials Science Forum

Year:

1993

File:

PDF, 288 KB

1993

34

Identification of Residual Donors in CdTe Grown by the Bridgman Method

Seto, S., Tanaka, A.

Journal:

Materials Science Forum

Year:

1993

File:

PDF, 348 KB

1993

35

Heavily Arsenic Doping into Si by ArF Excimer Laser Irradiation Using Tertiarybutylarsine (tBAs)

Chichibu, Shigefusa F., Nii, T., Akane, T., Matsumoto, S.

Journal:

Materials Science Forum

Year:

1993

File:

PDF, 295 KB

1993

36

Partial Ferromagnetic Order in p-Type (In, Mn) as Diluted Magnetic III-V Semiconductors

Ohno, H., Munekata, H., Penney, T., von Molnár, S., Chang, L.

Journal:

Materials Science Forum

Year:

1993

File:

PDF, 331 KB

1993

37

Visible Photoluminescence of Porous Silicon

Nishitani, H., Nakata, H., Ohyama, T., Fujiwara, Yasufumi

Journal:

Materials Science Forum

Year:

1993

File:

PDF, 307 KB

1993

38

Multi-Level Dynamics between Below-Gap States in Heavily Doped Quantum Wells by Time-Resolved and Selectively-Excited Photoluminescence

Kamata, N., Kanoh, E., Ohsaki, T., Yamada, K.

Journal:

Materials Science Forum

Year:

1993

File:

PDF, 350 KB

1993

39

Persistent Photoconductivity and Electric-Field Quenching Related with DX Centers in AlGaAs/GaAs Heterostructure

Journal:

Materials Science Forum

Year:

1993

File:

PDF, 302 KB

1993

40

Yb Intra-4f-Shell Luminescence in Yb- and Zn-Doped InP

Taguchi, Akihito, Takahei, Kenichiro

Journal:

Materials Science Forum

Year:

1993

File:

PDF, 388 KB

1993

41

Various Configurations of Silicon-Related Defects in GaAs

Okada, Yusuke, Fujii, Koichi

Journal:

Materials Science Forum

Year:

1993

File:

PDF, 372 KB

1993

42

Impurity Control in Silicon Crystals for G-Bit Scale Integration

Journal:

Materials Science Forum

Year:

1993

Language:

english

File:

PDF, 712 KB

english, 1993

43

Morphology of Oxide Precipitates in Czochralski Silicon Crystals

Sueoka, K., Ikeda, N., Yamamoto, T., Kobayashi, S.

Journal:

Materials Science Forum

Year:

1993

File:

PDF, 169 KB

1993

44

Characterization of Impurities in Si(C2H5O)4 for Efficient SiO2 Production in ULSI Technology

Danno, T., Seki, K.

Journal:

Materials Science Forum

Year:

1993

File:

PDF, 172 KB

1993

45

Carbon in LEC Grown GaAs Crystals

Otoki, Y., Sahara, M., Shinzawa, S., Kuma, S.

Journal:

Materials Science Forum

Year:

1993

File:

PDF, 326 KB

1993

46

Observation of Five Additional Thermal Donors and Kinetics of Thermal Donor Formation and Annihilation at Temperatures above 500°C in Czochralski-Grown Si

Götz, W., Pensl, Gerhard, Zulehner, W.

Journal:

Materials Science Forum

Year:

1993

File:

PDF, 357 KB

1993

47

Site Change of Li Atoms in ZnSe by Photoirradiation

Ichimura, M., Wada, T., Fujita, S.

Journal:

Materials Science Forum

Year:

1993

File:

PDF, 172 KB

1993

48

Optical Spectroscopy of Shallow Impurity States in Semiconductor Quantum Wells

Monemar, Bo, Holtz, P.O., Harris, C.I., Bergman, J. Peder, Kalt, H., Sundaram, M., Merz, J.L., Gossard, A.C., Köhler, K., Schweizer, T.

Journal:

Materials Science Forum

Year:

1993

File:

PDF, 398 KB

1993

49

Fermi Level Effect and Vacancy Contribution to the Outdiffusion of Si in GaAs

You, H.-M., Gösele, U.M., Tan, T.Y.

Journal:

Materials Science Forum

Year:

1993

File:

PDF, 295 KB

1993

50

Electronic States of Thermal Donors in Semiconductors

Ammerlaan, C.A.J., Gregorkiewicz, T.

Journal:

Materials Science Forum

Year:

1993

File:

PDF, 459 KB

1993

51

Co-Acceptor Complexes in Si

Van Bavel, A.-M., Langouche, G.

Journal:

Materials Science Forum

Year:

1993

File:

PDF, 301 KB

1993

52

The Effect of Arsenic Vapor Pressure on Site Distribution of Silicon in Gallium Arsenide Grown by the Gradient Freeze Method

Fujii, Koichi, Orito, Fumio, Fujita, H.

Journal:

Materials Science Forum

Year:

1993

File:

PDF, 293 KB

1993

53

Optical Studies of Excitons in Be-Doped GaAs/AlGaAs Symmetric Coupled Double Quantum Wells

Zhao, Q.X., Westgaard, T., Monemar, Bo, Fimland, B.O., Johannessen, K.

Journal:

Materials Science Forum

Year:

1993

File:

PDF, 350 KB

1993

54

Effect of External Pressure and Internal Stress on Imyurity Diffusion in Silicon

Sugino, O., Oshiyama, Atsushi

Journal:

Materials Science Forum

Year:

1993

File:

PDF, 396 KB

1993

55

The Sn- and Si-DK Centre Properties in Double Doped (Al,Ga)As

Maude, D.K., Willke, U., Fille, M.L., Gibart, Pierre, Portal, Jean Claude

Journal:

Materials Science Forum

Year:

1993

File:

PDF, 376 KB

1993

56

Hydrogen Passivation of Shallow Impurities in GaAs/AlGaAs Quantum Wells

Harris, C.I., Stutzmann, M., Köhler, K.

Journal:

Materials Science Forum

Year:

1993

File:

PDF, 347 KB

1993

57

Photoluminescence Measurements of a Beryllium-Related Deep Center in Silicon

Campion, J.D., McGuigan, K.G., Henry, M.O., Nazaré, Maria Helena

Journal:

Materials Science Forum

Year:

1993

File:

PDF, 293 KB

1993

58

Electron Beam Doping of Si and Zn Impurities into GaAs

Wada, T., Takeda, Mikako, Takeda, A.

Journal:

Materials Science Forum

Year:

1993

File:

PDF, 313 KB

1993

59

The Structure of a Metastable Luminescent Defect in Sulphur-Doped Silicon

Singh, M., Davies, Gordon, Lightowlers, Edward C., Watkins, G.D.

Journal:

Materials Science Forum

Year:

1993

File:

PDF, 337 KB

1993

60

Si Doping of GaAs Grown by Molecular Beam Epitaxy on Different Substrate Orientations

Pavesi, L., Piazza, F., Harrison, I., Henini, M.

Journal:

Materials Science Forum

Year:

1993

File:

PDF, 375 KB

1993

61

Photoluminescence Characterization of Defecfs in CuGaS2 Crystals

Shirakata, S., Miyazaki, Toshiki, Isomura, S.

Journal:

Materials Science Forum

Year:

1993

File:

PDF, 290 KB

1993

62

Photoluminescence due to Zn-O Complexes in Silicon

Campion, J.D., Henry, M.O., McGuigan, K.G., Lightowlers, Edward C.

Journal:

Materials Science Forum

Year:

1993

File:

PDF, 157 KB

1993

63

Zeeman and Piezo-Zeeman Spectroscopy of Zinc and Copper Acceptors in Germanium

Warner, A.D., Ryan, D.S., Fisher, P., Freeth, C.A.

Journal:

Materials Science Forum

Year:

1993

File:

PDF, 394 KB

1993

64

Deep Electron Trap Studies of GaAlAs/GaAs Single and Multiple Quantum Well Lasers Fabricated on Si Substrate by MOCVD

Lu, L., Zhou, J., Zhang, W., Umeno, Masayoshi

Journal:

Materials Science Forum

Year:

1993

File:

PDF, 393 KB

1993

65

Strong Electron-Phonon Interaction of a Hydrogen-Carbon Complex and the Motion of Isolated Hydrogen in Si

Kamiura, Y., Okashita, T., Nishiyama, Y., Hashimoto, Fumio

Journal:

Materials Science Forum

Year:

1993

File:

PDF, 406 KB

1993

66

Shifts of the Infrared Absorption Peaks of Oxygen in Silicon Caused by Germanium-Doping

Yamada-Kaneta, Hiroshi, Kaneta, Ch., Ogawa, Tomoya

Journal:

Materials Science Forum

Year:

1993

File:

PDF, 341 KB

1993

67

Alloy Broadening of the Acceptor-Related Near-Gap Luminescence in Semiconductor Alloys

Langer, Jerzy M., Buczko, Ryszard, Stoneham, A.M.

Journal:

Materials Science Forum

Year:

1993

File:

PDF, 326 KB

1993

68

Ultrashallow Hydrogen-Like Thermal Donors in Silicon Crystals

Hara, A., Aoki, M., Fukuda, T., Ohsawa, A.

Journal:

Materials Science Forum

Year:

1993

File:

PDF, 411 KB

1993

69

Free-Carrier Saturation in III-V Compound Semiconductors

Tokumitsu, E., Konagai, Makoto

Journal:

Materials Science Forum

Year:

1993

File:

PDF, 368 KB

1993

70

Self-Modulating Incorporation of Sb in Si/SiGe Superlattices during Molecular Beam Epitaxial Growth

Fujita, K., Fukatsu, S., Usami, N., Yaguchi, H., Shiraki, Y., Ito, R.

Journal:

Materials Science Forum

Year:

1993

File:

PDF, 359 KB

1993

71

Photo-Induced Simultaneous Transformations of Shallow Donors and EL2 States in Semi-Insulating GaAs

Shimizu, Takamitsu, Kobori, H., Ohyama, T., Otsuka, E.

Journal:

Materials Science Forum

Year:

1993

File:

PDF, 315 KB

1993

72

D- Centers in High Magnetic Fields and Quantum Wells

Zhu, J., Louie, S.G., Pang, T.

Journal:

Materials Science Forum

Year:

1993

File:

PDF, 408 KB

1993

73

Simulation of Oxygen Precipitation and Denuded Zone Formation during Thermal Anneals

Journal:

Materials Science Forum

Year:

1993

File:

PDF, 374 KB

1993

74

Effective-Mass-Like Excited Pseudo-Donor States of a Complex Metastable Defect in Silicon

Svensson, J.H., Janzén, Erik, Kordina, Olle, Monemar, Bo

Journal:

Materials Science Forum

Year:

1993

File:

PDF, 311 KB

1993

75

Defect Observation in Silicon Surface Layers by Surface Wave Resonance in RHEED

Journal:

Materials Science Forum

Year:

1993

File:

PDF, 300 KB

1993

76

Spherical Model of Shallow Acceptor Resonant P1/2 States in Cubic Semiconductors

Buczko, Ryszard

Journal:

Materials Science Forum

Year:

1993

File:

PDF, 329 KB

1993

77

Zeeman and Landau Spectroscopy of Group III Acceptors in Germanium

Takacs, G.J., Vickers, R.E.M., Fisher, P., Freeth, C.A.

Journal:

Materials Science Forum

Year:

1993

File:

PDF, 378 KB

1993

78

Iron-, Manganese- and Chromium-Indium Pairs in Silicon

Reislöhner, U., Schwarz, S., Witthuhn, W.

Journal:

Materials Science Forum

Year:

1993

File:

PDF, 364 KB

1993

79

The Dynamics of the Non-Radiative Triplet State of the (V-O)0 Defect in Silicon: Evidence for a Radical Pair Mechanism

Frens, A.M., Braat, M.E., van Oosten, A.B., Schmidt, J.

Journal:

Materials Science Forum

Year:

1993

File:

PDF, 327 KB

1993

80

Differential Hall-Effect Spectroscopy of Rare-Earth Impurities (Ce, Er) in Silicon

Nakayama, H., Matsuura, A., Kohno, M., Nishino, Taneo

Journal:

Materials Science Forum

Year:

1993

File:

PDF, 295 KB

1993

81

Impurity Diffusion into GaAs through the SiO2 Protective Layers

Gautam, D.K., Shimogaki, Yukihiro, Nakano, Y., Tada, K.

Journal:

Materials Science Forum

Year:

1993

File:

PDF, 324 KB

1993

82

Origin of Carrier Reduction by Annealing in n-Type ZnSe

Miyajima, T., Okuyama, Hideo, Akimoto, Katsuhiro, Wei, Long, Tanigawa, Shoichiro

Journal:

Materials Science Forum

Year:

1993

File:

PDF, 306 KB

1993

83

Hall Effect and Infrared Absorption Measurements on Nitrogen Donors in 4H-SiC

Götz, W., Schöner, Adolf, Pensl, Gerhard, Suttrop, W., Choyke, W.J., Stein, René A., Leibenzeder, S.

Journal:

Materials Science Forum

Year:

1993

File:

PDF, 361 KB

1993

84

Impurity Vibrations of Carbon-Oxygen Complexes in Crystalline Silicon

Kaneta, C., Sasaki, Tokuhito, Katayama-Yoshida, Hiroshi

Journal:

Materials Science Forum

Year:

1993

File:

PDF, 410 KB

1993

85

Shallow Donor States in InP - Electron-Spin-Resonance Induced Overhauser Shift -

Murakami, Kenji, Ohyanagi, T., Hara, Kazusato, Masuda, K.

Journal:

Materials Science Forum

Year:

1993

File:

PDF, 309 KB

1993

86

Zeeman Study of 735meV Photoluminescence Band in Iron-Doped Silicon

Càlao, M.I., Carmo, M. Celeste

Journal:

Materials Science Forum

Year:

1993

File:

PDF, 251 KB

1993

87

Measurement of Interstitial Oxygen Striations in Silicon Single Crystals Using the Micro-FTIR Method

Iino, E., Fusegawa, I., Yamagishi, H.

Journal:

Materials Science Forum

Year:

1993

File:

PDF, 337 KB

1993