Volume 32; Issue 5-6

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Microelectronics Journal
Volume 32; Issue 5-6

Microelectronics Journal

Volume 32; Issue 5-6

1

High-power robust semiconductor electronics technologies in the new millennium

Journal:

Microelectronics Journal

Year:

2001

Language:

english

File:

PDF, 403 KB

english, 2001

2

AlGaAs/GaAs heterojunction bipolar transistors for power applications: issues of thermal effect and reliability

J.J Liou, C.I Huang

Journal:

Microelectronics Journal

Year:

2001

Language:

english

File:

PDF, 544 KB

english, 2001

3

Local lifetime control by light ion irradiation: impact on blocking capability of power P–i–N diode

P Hazdra, K Brand, J Rubeš, J Vobecký

Journal:

Microelectronics Journal

Year:

2001

Language:

english

File:

PDF, 239 KB

english, 2001

4

Self-protection functions in direct light-triggered high-power thyristors

F.-J Niedernostheide, H.-J Schulze, U Kellner-Werdehausen

Journal:

Microelectronics Journal

Year:

2001

Language:

english

File:

PDF, 137 KB

english, 2001

5

Design, tests and applications of 3.3 kV asymmetrical thyristor

D.J Chamund, N.Y.A Shammas

Journal:

Microelectronics Journal

Year:

2001

Language:

english

File:

PDF, 344 KB

english, 2001

6

Improving the dynamic avalanche breakdown of high voltage planar devices using semi-resistive field plates

D Dragomirescu, G Charitat

Journal:

Microelectronics Journal

Year:

2001

Language:

english

File:

PDF, 230 KB

english, 2001

7

Numerical analysis on the LDMOS with a double epi-layer and trench electrodes

I.-Y Park, Y.-I Choi, S.-K Chung, H.-J Lim, S.-I Mo, J.-S Choi, M.-K Han

Journal:

Microelectronics Journal

Year:

2001

Language:

english

File:

PDF, 749 KB

english, 2001

8

SiC power DIMOS with double implanted Al/B P-well

P Godignon, E Morvan, X Jordá, M Vellvehi, D Flores, J Rebollo

Journal:

Microelectronics Journal

Year:

2001

Language:

english

File:

PDF, 159 KB

english, 2001

9

A new generation of power lateral and vertical floating islands MOS structures

F Morancho, N Cézac, A Galadi, M Zitouni, P Rossel, A Peyre-Lavigne

Journal:

Microelectronics Journal

Year:

2001

Language:

english

File:

PDF, 287 KB

english, 2001

10

Silicon-on-insulator power integrated circuits

D.M Garner, F Udrea, H.T Lim, G Ensell, A.E Popescu, K Sheng, W.I Milne

Journal:

Microelectronics Journal

Year:

2001

Language:

english

File:

PDF, 536 KB

english, 2001

11

A monolithic IGBT gate driver for intelligent power modules implemented in 0.8 μm high voltage (50 V) CMOS process

J.M Park, E.D Kim, S.C Kim, N.K Kim, W Bahng, G.H Song, S.B Han

Journal:

Microelectronics Journal

Year:

2001

Language:

english

File:

PDF, 348 KB

english, 2001

12

New laser technology for wire bonding in power devices

F Kostrubiec, Z Lisik, R Pawlak, K Jakubowska, A Korbicki

Journal:

Microelectronics Journal

Year:

2001

Language:

english

File:

PDF, 234 KB

english, 2001

13

Progress in power semiconductors

Georges Charitat, Vitezslav Benda, Ninoslav Stojadinovic

Journal:

Microelectronics Journal

Year:

2001

Language:

english

File:

PDF, 38 KB

english, 2001

14

PatentsALERT

Journal:

Microelectronics Journal

Year:

2001

Language:

english

File:

PDF, 83 KB

english, 2001

15

Integration of power devices in advanced mixed signal analog BiCMOS technology

Journal:

Microelectronics Journal

Year:

2001

Language:

english

File:

PDF, 420 KB

english, 2001

16

Physically based compact device models for circuit modelling applications

P.A. Mawby, P.M. Igic, M.S. Towers

Journal:

Microelectronics Journal

Year:

2001

Language:

english

File:

PDF, 963 KB

english, 2001

17

Radial confinement in lateral power devices

S Krishnan, M.M De Souza, E.M.S Narayanan, M Vellvehi, J Roig, D Flores, J Rebollo, J Millan

Journal:

Microelectronics Journal

Year:

2001

Language:

english

File:

PDF, 112 KB

english, 2001

18

Analytical modelling of electrical characteristics in γ-irradiated power VDMOS transistors

I Manić, Z Pavlović, Z Prijić, V Davidović, N Stojadinović

Journal:

Microelectronics Journal

Year:

2001

Language:

english

File:

PDF, 139 KB

english, 2001

19

Power superjunction devices: an analytic model for breakdown voltage

A.G.M Strollo, E Napoli

Journal:

Microelectronics Journal

Year:

2001

Language:

english

File:

PDF, 272 KB

english, 2001

20

Monolithic integration of a high-performance clustered insulated gate bipolar transistor with low-voltage components to form a 3 kV intelligent power chip

M Sweet, C.K Ngw, O Spulber, J.V.L Ngwendson, K.V Vershinin, S.C Bose, M.M De Souza, E.M.S Narayanan

Journal:

Microelectronics Journal

Year:

2001

Language:

english

File:

PDF, 451 KB

english, 2001