Volume 21; Issue 5

Microelectronics Reliability

Volume 21; Issue 5

1

Calendar of international conferences, symposia, lectures and meetings of interest

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

PDF, 126 KB

english, 1981

2

Publications, notices, calls for papers, etc.

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

PDF, 663 KB

english, 1981

3

Reliability problems in TTL-LS devices

C. Canali, F. Fantini, S. Gaviraghi, A. Senin

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

PDF, 734 KB

english, 1981

4

Unified availability modeling: A redundant system with mechanical, electrical, software, human and common-cause failures

Balbir S. Dhillon

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

PDF, 199 KB

english, 1981

5

Light maintenance for a two-unit parallel redundant system with bivariate exponential lifetimes

Yoshio Sugasaw, Ikuo Kaji

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

PDF, 269 KB

english, 1981

6

A general software reliability model for performance prediction

J.G. Shanthikumar

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

PDF, 394 KB

english, 1981

7

BS 9000 components and reliability quality factors: Suggested use of MIL-HDBK-217C factors based on a comparative product assurance analysis

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

PDF, 584 KB

english, 1981

8

DC conduction mechanisms in thin polyimide films

Joseph H. Nevin, Gregory L. Summe

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

PDF, 237 KB

english, 1981

9

A two non-identical three-state units redundant system with common-cause failures and one standby unit

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

PDF, 142 KB

english, 1981

10

A computer-aided method for allocation of discrete tolerances in electric networks

K.R. Pillai, J.D. Sharma, K.B. Misra

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

PDF, 284 KB

english, 1981

11

Stochastic behaviour of a two-unit redundant system with switchover time

Ashok Kumar, Vipin B. Kapoor, S.P. Aggarwal

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

PDF, 515 KB

english, 1981

12

On selective electroplating of gold in fabrication of MIC's

S. Ahmad, M. Mustafa, J. Akhtar

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

PDF, 573 KB

english, 1981

13

A geometric programming approach for optimum tolerance assignment in circuits

K.R. Pillai, J.D. Sharma, K.B. Misra

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

PDF, 261 KB

english, 1981

14

Optimum ordering policies with random lead times

S. Kalpakam, M.A. Shahul Hameed

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

PDF, 279 KB

english, 1981

15

Control of the transistor base sheet resistance in constructing a monolithic analog integrated circuit with symmetric I–V characteristics

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

PDF, 115 KB

english, 1981

16

A note on a lifetime model

Reinhard Viertl

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

PDF, 93 KB

english, 1981

17

Squeaking solder powder

Ronald P. Anjard Sr

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

PDF, 87 KB

english, 1981

18

Statistical evaluation of learning factor in reliability studies : W. W. Abadeer. IEEE Trans. Reliab.R-29 (5) 414 (December 1980)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

PDF, 92 KB

english, 1981

19

Quality, reliability top TI's list : Gerald M. Walker. Electronics95 (24 March 1981)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

PDF, 92 KB

english, 1981

20

Poisson process and integrated circuit yield prediction : Richard S. Hemmert. Solid-St. Electron. 24, 511 (1981)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

PDF, 92 KB

english, 1981

21

Test strategies find faults in users' bubble memories : Don Harmon. Electronics145 (2 June 1981)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

PDF, 92 KB

english, 1981

22

Thermal resistance: a reliability consideration : Kenneth E. Manchester and Donald W. Bird. IEEE Trans. Components. Hybrids, Manuf. Technol.CHMT-3 (4) 580 (December 1980)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

PDF, 92 KB

english, 1981

23

Properties of low anodization voltage thin-film capacitors based on α-Ta with nitrogen concentrations between 14 and 30 atomic percent : Myron H. Rottersman, Raymond C. Pitetti, A. Robert Adolt and Michael J. Bill. IEEE Trans. Components, Hybrids, Manuf. Technol.CHMT-3 (4) 500 (December 1980)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

PDF, 92 KB

english, 1981

24

Physical interpretation of the tantalum chip capacitor life-test results : Eugene Loh. IEEE Trans. Components, Hybrids, Manuf. Technol.CHMT-3 (4) 647 (December 1980)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

PDF, 92 KB

english, 1981

25

A multistate system with general repair time distribution : Mitsuo Yamashiro. IEEE Trans. Reliab.R-29 (5) 433 (December 1980)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

PDF, 123 KB

english, 1981

26

Applying signature analysis to existing processor-based products : Robert Rhodes-Burke. Electronics127 (24 February 1981)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

PDF, 123 KB

english, 1981

27

Reliability determination of a r-successive-out-of-n:F system: J. M. Kontoleon. IEEE Trans. Reliab.R-29 (5) 437 (December 1980)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

PDF, 123 KB

english, 1981

28

Prediction intervals for IFR distributions : Jagdish K. Patel. IEEE Trans. Reliab.R-29 (5) 406 (December 1980)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

PDF, 123 KB

english, 1981

29

First-passage time distribution of Brownian motion as a reliability model : Y. S. Sherif and M. L. Smith. IEEE Trans. Reliab.R-29 (5) 425 (December 1980)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

PDF, 123 KB

english, 1981

30

The drive for quality and reliability. Part I : Jerry Lyman. Electronics125 (19 May 1981)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

PDF, 123 KB

english, 1981

31

Makers organize for quality. Part 2 : Electronics137 (19 May 1981)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

PDF, 123 KB

english, 1981

32

Users push for quality. Part 3 : Electronics141 (19 May 1981)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

PDF, 123 KB

english, 1981

33

Analytical techniques in product safety : Verne L. Roberts and Phillip L. Jones. J. Products Liability4, 67 (1981)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

PDF, 123 KB

english, 1981

34

Automatic unit troubleshoots systems : Bruce Leboss. Electronics183 (19 May 1981)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

PDF, 123 KB

english, 1981

35

Analyzer fills debugging gap : Bruce Leboss. Electronics188 (19 May 1981)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

PDF, 123 KB

english, 1981

36

A continuous time model of multiple intermittent faults in digital systems : Richard Jay Spillman. Comput. Elect. Engng.8, 27 (1981)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

PDF, 123 KB

english, 1981

37

Reliability analysis of a fluidized-bed boiler for a coal-fueled power plant : Thomas G. Woo. IEEE Trans. Reliab.R-29 (5) 422 (December 1980)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

PDF, 123 KB

english, 1981

38

Multi-echelon multiple criteria spares allocation : Radivoj Petrovic, Aleksandar Senborn and Mirko Vujosevic. IEEE Trans. Reliab.R-29 (5) 392 (December 1980)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

PDF, 123 KB

english, 1981

39

Experience in the shifting of responsibility for quality through introducing operator testing in industrial production : H. G. Babic and H. Kampa. Feinwerktech. Messtech.89 (1) 6 (1981) (in German)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

PDF, 253 KB

english, 1981

40

Estimation of reliability of cascade system : M. Afzal Beg. IEEE Trans. Reliab.R-29 (5) 429 (December 1980)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

PDF, 131 KB

english, 1981

41

Bayesian 1-sample prediction for the 2-parameter Weibull distribution : I. G. Evans and A. H. M. Nigm. IEEE Trans. Reliab.R-29 (5) 410 (December 1980)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

PDF, 131 KB

english, 1981

42

Confidence regions for distribution bounds : Anthony A. Salvia. IEEE Trans. Reliab.R-29 (5) 397 (December 1980)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

PDF, 131 KB

english, 1981

43

Simplified process controls based on acceptance by attributes : Peter Whittingham. Qual. Prog.22 (February 1981)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

PDF, 131 KB

english, 1981

44

Methods for probabilistic analysis of noncoherent fault trees : T. L. Chu and G. Apostolakis. IEEE Trans. Reliab.R-29 (5) 354 (December 1980)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

PDF, 131 KB

english, 1981

45

State-transition Monte Carlo for evaluating large, repairable systems : Hiromitsu Kumamoto, Kazuo Tanaka, Koichi Inoue and Ernest J. Henley. IEEE Trans. Reliab.R-29 (5) 376 (December 1980)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

PDF, 131 KB

english, 1981

46

A cut set method for reliability evaluation of systems having s-dependent components: C. Singh. IEEE Trans. Reliab.R-29 (5) 372 (December 1980)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

PDF, 131 KB

english, 1981

47

Probabilistic evaluation of prime implicants and top-events for non-coherent systems : Toshiyuki Inagaki and Ernest J. Henley. IEEE Trans. Reliab.R-29 (5) 361 (December 1980)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

PDF, 131 KB

english, 1981

48

2-unit standby system with fault analysis : Roshan Lal, Ashok Kumar and D. D. Joshi. IEEE Trans. Reliab.R-29 (5) 431 (December 1980)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

PDF, 131 KB

english, 1981

49

Admissible, minimax and equivariant estimators of life distributions from Type II censored samples : Albert H. Moore and J. Edward Bilikam. IEEE Trans. Reliab.R-29 (5) 401 (December 1980)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

PDF, 253 KB

english, 1981

50

System performs complete SLIC tests : Harvey J. Hindin. Electronics207 (24 March 1981)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

PDF, 123 KB

english, 1981

51

Software aids to microcomputer system reliability : A. R. Wood. Microelectron. J.12 (2) 21 (1981)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

PDF, 123 KB

english, 1981

52

Minimizing the parts count of multichannel data systems : Gary Grandbois and Wes Freeman. Electronics133 (27 January 1981)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

PDF, 123 KB

english, 1981

53

Fail-to-safe and fail-to-danger analysis of logic protective networks : J. M. Kontoleon. IEEE Trans. Reliab.R-29 (5) 436 (December 1980)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

PDF, 123 KB

english, 1981

54

Logistics availability for sites with periodic or random resupply : Judy F. Alter and Jack M. Finkelstein. IEEE Trans. Reliab.R-29 (5) 387 (December 1980)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

PDF, 123 KB

english, 1981

55

A new technique for depot and sub-depot spares : Henry A. Malec and Daniel Steinhorn. IEEE Trans. Reliab.R-29 (5) 381 (December 1980)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

PDF, 123 KB

english, 1981

56

Recursive disjoint products, inclusion-exclusion and min-cut approximations : Mitchell O. Locks. IEEE Trans. Reliab.R-29 (5) 368 (December 1980)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

PDF, 123 KB

english, 1981

57

System maintenance firms find a niche : Terry Costlow. Electronics108 (5 May 1981)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

PDF, 123 KB

english, 1981

58

Effect of device reliability on memory reliability : Jonathan A. Humphry. IEEE Trans. Reliab.R-29 (5) 416 (December 1980)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

PDF, 123 KB

english, 1981

59

Network problem-determination aids in microprocessor-based modems : Simon Huon and Robert Smith. IBM J. Res. Develop.25 (1) 3 (January 1981)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

PDF, 240 KB

english, 1981

60

How Japan's chip makers line up to compete : John G. Posa. Electronics113 (2 June 1981)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

PDF, 116 KB

english, 1981

61

Soviet chips feature refined fabrication but mimic U.S. ICs : John G. Posa. Electronics39 (27 January 1981)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

PDF, 116 KB

english, 1981

62

Are U.S. C-MOS makers falling behind? : John G. Posa. Electronics97 (10 March 1981)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

PDF, 116 KB

english, 1981

63

Oil prices fuel power IC work : Gil Bassak. Electronics97 (7 April 1981)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

PDF, 116 KB

english, 1981

64

Auto slump drags IC prices down : Gil Bassak. Electronics108 (24 March 1981)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

PDF, 116 KB

english, 1981

65

Detour ahead for IC equipment makers? : James B. Brinton and Linda Lowe. Electronics108 (24 February 1981)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

PDF, 116 KB

english, 1981

66

Copy Japanese, U.S. managers urged : Ray Connolly. Electronics106 (21 April 1981)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

PDF, 116 KB

english, 1981

67

ECC tackles fiber optics, bonding, hybrid technology : Vincent Biancomano. Electronics137 (5 May 1981)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

PDF, 116 KB

english, 1981

68

Innovations which reduce costs and turn around time of integrated circuit production for small electronic engineering companies : K. F. Poole, D. L. Knee and I. Clark. Microelectron. J.12 (1) 33 (1981)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

PDF, 116 KB

english, 1981

69

Is epitaxy right for MOS? : John G. Posa. Electronics93 (10 February 1981)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

PDF, 116 KB

english, 1981

70

Plasma etching of aluminum : Dennis W. Hess. Solid-St. Technol.189 (April 1981)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

PDF, 116 KB

english, 1981

71

Thermal transients in electronic packages : M. Lawrence Buller. IEEE Trans. Components, Hybrids, Manuf. Technol.CHMT-3 (4) 588 (December 1980)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

PDF, 116 KB

english, 1981

72

X-ray lithography breaks the submicrometer barrier : Martin P. Lepselter. IEEE Spectrum26 (May 1981)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

PDF, 116 KB

english, 1981

73

Plasma planarization : A. C. Adams. Solid-St. Technol.178 (April 1981)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

PDF, 116 KB

english, 1981

74

Plasma enhanced CVD in a novel LPCVD-type system : Richard S. Rosler and George M. Engle. Solid-St. Technol.172 (April 1981)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

PDF, 131 KB

english, 1981

75

Multi-scan electron beam sintering of Al-Si OHMIC contacts : M. Finetti, S. Solmi and G. Soncini. Solid-St. Electron.24, 539 (1981)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

PDF, 131 KB

english, 1981

76

Anisotropic etching in chlorine-containing plasmas : Vincent M. Donnelly and Daniel L. Flamm. Solid-St. Technol.161 (April 1981)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

PDF, 131 KB

english, 1981

77

Individual wafer metallization utilizing load-locked, closecoupled conical magnetron sputtering : Vance E. Hoffman and Helen M. Chang. Solid-St. Technol.105 (February 1981)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

PDF, 131 KB

english, 1981

78

Safety in chemical vapor deposition : M. L. Hammond. Solid-St. Technol.104 (December 1980)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

PDF, 131 KB

english, 1981

79

Reverse CMOS processing : Roy L. Maddox. Solid-St. Technol.128 (February 1981)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

PDF, 131 KB

english, 1981

80

Wafer-etching systems line up : Linda Lowe. Electronics183 (24 February 1981)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

PDF, 131 KB

english, 1981

81

Automated semiconductor line speeds custom chip production : R. H. Brunner, E. J. Holden, J. C. Luber, D. T. Mozer and Ning-Gau Wu. Electronics121 (27 January 1981)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

PDF, 131 KB

english, 1981

82

Strip architecture fits microcomputer into less silicon : John Hayn, Kevin McDonough and Jeffrey Bellay. Electronics107 (27 January 1981)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

PDF, 131 KB

english, 1981

83

Post-characterization of GaAs field effect transistors and integrated circuits on test patterns : M. Rocchi. Acta Electron.23 (1) 63 (1980) (in French)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

PDF, 131 KB

english, 1981

84

Review of factors affecting warpage of silicon wafers : D. Thebault and L. Jastrzebski. RCA Rev.41, 592 (December 1980)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

PDF, 128 KB

english, 1981

85

Survey of the international state of special LSI circuits for the PCM technique : U. Manicke. Nach. Elektron.3, 92 (1981) (in German)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

PDF, 128 KB

english, 1981

86

Evaluation of CMOS transistor related design rules : Alfred C. Ipri. RCA Rev.41, 537 (December 1980)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

PDF, 128 KB

english, 1981

87

Methods of end point detection for plasma etching : Paul J. Marcoux and Pang Dow Foo. Solid-St. Technol.115 (April 1981)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

PDF, 128 KB

english, 1981

88

Projection aligners stepping out : Linda Lowe. Electronics104 (24 March 1981)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

PDF, 128 KB

english, 1981

89

Planar double-heterostructure GaAlAs LED's packaged for fiber optics : R. Stephen Speer and Bobby M. Hawkins. IEEE Trans. Components, Hybrids, Manuf. Technol.CHMT-3 (4) 480 (December 1980)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

PDF, 128 KB

english, 1981

90

Silicides for interconnection technology : Farrokh Mohammadi. Solid-St. Technol.65 (January 1981)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

PDF, 128 KB

english, 1981

91

Trends in packaging and interconnection of integrated circuits : A. G. Saunders. Microelectron. J.12 (1) 23 (1981)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

PDF, 128 KB

english, 1981

92

Monolithic integrated filters—an overview : Walter Entenmann. Frequenz35 (3/4) 54 (1981) (in German)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

PDF, 128 KB

english, 1981

93

Hermetic chip carrier packaging : E. M. Reiss and R. Glicksman. Solid-St. Technol.199 (April 1981)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

PDF, 128 KB

english, 1981

94

A review of flatness effects in microlithographic technology : Winthrop A. Baylies. Solid-St. Technol.132 (February 1981)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

PDF, 128 KB

english, 1981

95

Hot-wall CVD Tungsten for VLSI : Nicholas E. Miller and Israel Beinglass. Solid-St. Technol.79 (December 1980)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

PDF, 128 KB

english, 1981

96

Control chip and driver program unlock magnetic-bubble potential : Ravi Luthra and George Reyling, Jr.Electronics138 (10 February 1981)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

PDF, 120 KB

english, 1981

97

Chip set bestows virtual memory on 16-bit minis : Jan Beekmans, Gerald Duynisveld, Claude Fernandes, Leo de Groot, Louis Quere, Frans Schiereck and Arjaen Vermeulen. Electronics134 (2 June 1981)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

PDF, 120 KB

english, 1981

98

N-channel process increases speed and density of MNOS EEPROMs: M. Kalet, J. Multani, K. Rajkanan and A. Sass. Electronics152 (5 May 1981)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

PDF, 120 KB

english, 1981

99

Microprocessors and the M.D. A new breed of smart medical equipment can diagnose, monitor, analyze, and rehabilitate : Albert F. Shackil. IEEE Spectrum45 (April 1981)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

PDF, 120 KB

english, 1981

100

Monolithic microwave circuits : R. S. Pengelly. Electron. Power379 (May 1981)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

PDF, 120 KB

english, 1981

101

Analyzer tests bare and loaded boards : Bruce Leboss. Electronics169 (5 May 1981)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

PDF, 120 KB

english, 1981

102

Personality modules' firmware controls VLSI circuit tester : Kevin Smith. Electronics7E (10 March 1981)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

PDF, 120 KB

english, 1981

103

Fast on-chip memory extends 16-bit family's reach : David S. Laffitte and Karl M. Guttag. Electronics157 (24 February 1981)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

PDF, 120 KB

english, 1981

104

Maximizing a 64-K RAM's operating margins : John Y. Chan, David A. Maxwell, John E. Muschinske and John J. Barnes. Electronics197 (21 April 1981)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

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PDF, 120 KB

english, 1981

105

Performance of digital integrated circuit technologies at very high temperatures : John L. Prince, Bruce L. Draper, E. A. Rapp, J. N. Kronberg and Lewis T. Fitch. IEEE Trans. Components, Hybrids, Manuf. Technol.CHMT-3 (4) 571 (December 1980)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

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english, 1981

106

Over a million devices make up 32-bit CPU and support chips : Bruce Leboss. Electronics39 (10 February 1981)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

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english, 1981

107

Oxidized porous silicon isolates better than sapphire : Charles Cohen. Electronics77 (27 January 1981)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

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english, 1981

108

CHAS seeks title of global CAD system : James B. Brinton. Electronics100 (10 February 1981)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

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english, 1981

109

Software rules give personal computer real word power : Kun-Shan Lin, Gene A. Frantz and Kathy Goudie. Electronics122 (10 February 1981)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

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english, 1981

110

A 2400-bit/s microprocessor-based modem : Dominique Godard and Daniel Pilost. IBM J. Res. Develop.25 (1) 17 (January 1981)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

PDF, 241 KB

english, 1981

111

Semiconductor device sensitive to magnetic field gradient : N. J. Janaviciene, I. S. Levitas, J. K. Pozela and K. K. Stalioraitis. Solid-St. Electron.24, 407 (1981)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

PDF, 119 KB

english, 1981

112

3−d MOS FETs shrink static RAM cells and analog circuit blocks: John G. Posa. Electronics39 (5 May 1981)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

PDF, 120 KB

english, 1981

113

Functional and in-circuit testing team up to tackle VLSI in the '80s : Peter Hansen. Electronics189 (21 April 1981)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

PDF, 120 KB

english, 1981

114

Static n-MOS RAM idles on trickle current: F. A. Scherpenberg. Electronics129 (27 January 1981)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

PDF, 120 KB

english, 1981

115

Stress-sensitive properties of silicon-gate MOS devices : Hiroaki Mikoshiba. Solid-St. Electron.24, 221 (1981)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

PDF, 120 KB

english, 1981

116

Multifunction chip plays many parts in analog design : David L. Gillooly and Paul Henneuse. Electronics121 (7 April 1981)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

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english, 1981

117

A model for the breakdown characteristics of p-channel MOS transistor protection devices: H. Maes, P. Six and W. Sansen. Solid-St. Electron.24, 523 (1981)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

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PDF, 120 KB

english, 1981

118

Interface edge effect and its contribution to the frequency dispersion of metal-oxide-semiconductor admittance : Y. C. Sun and C. T. Sah. Solid-St. Electron.24, 569 (1981)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

PDF, 252 KB

english, 1981

119

Review of RIE induced radiation damage in silicon dioxide : L. M. Ephrath and D. J. Dimaria. Solid-St. Technol.182 (April 1981)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

PDF, 134 KB

english, 1981

120

Evaluation of inhomogeneous resistive layers by a four point method : Gyorgy Fodor, Miklos Szilagyi and Laszlo Zombory. Electrocomponent Sci. Technol.7, 211 (1981)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

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english, 1981

121

Substrate response of a floating gate n-channel MOS memory cell subject to a positive linear ramp voltage: Han-Sheng Lee and David Scott Lowrie. Solid-St. Electron.24, 267 (1981)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

PDF, 134 KB

english, 1981

122

ESR studies of thermally oxidized silicon wafers : Christer Brunstrom and Christer Svensson. Solid-St. Commun.37, 399 (1981)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

PDF, 134 KB

english, 1981

123

Localized anodic thinning of GaAs structures : D. W. Shaw and R. E. Williams. Solid-St. Electron.24, 281 (1981)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

PDF, 134 KB

english, 1981

124

Vibrational properties of crystalline and amorphous Ge1−xSix alloys: Bal K. Agrawal. Solid-St. Commun.37, 271 (1981)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

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english, 1981

125

Field enhanced carrier generation in MOS-capacitors containing defects : C. Werner, A. Eder and H. Bernt. Solid-St. Electron.24, 275 (1981)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

PDF, 131 KB

english, 1981

126

Topological classification of defects in crystals : K. B. Ma and J. M. F. Gunn. Prog. Crystal Growth Charact.3, 273 (1981)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

PDF, 131 KB

english, 1981

127

A new EPR center due to dislocations in phosphorous doped silicon : E. Weber and H. Alexander. Solid-St. Commun.37, 371 (1981)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

PDF, 131 KB

english, 1981

128

Calculation of the self-induced field profile produced by steady-state distribution of signal carriers in charge-coupled device : Marek Syrzycki. Electron Technol.12 (3) 47 (1979)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

PDF, 131 KB

english, 1981

129

GaAs epitaxial growth for field effect transistors : J. P. Chané and J. Hallais. Acta Electron.23 (1) 11 (1980)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

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english, 1981

130

GaAs semi-insulating materials: key parameters and characterization methods : G. M. Martin, G. Jacob and G. Poiblaud. Acta Electron.23 (1) 37 (1980) (in French)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

PDF, 131 KB

english, 1981

131

Rapid determination of concentration and mobility profiles on thin GaAs layers : M. Binet. Acta Electron.23 (1) 53 (1980) (in French)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

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english, 1981

132

The effect of boron redistribution on the threshold voltage of n-channel MOS transistors in CMOS structures: Krystyna Swiatek and Piotr Dumania. Electron Technol.12 (3) 101 (1979)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

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english, 1981

133

Low frequency excess noise in SOS MOS FET's : S. T. Hsu. RCA Rev.41, 577 (December 1980)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

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english, 1981

134

Luminescence and lattice defects in Cu In S2: G. Masse, N. Lahlou and C. Butti. J. Phys. Chem. Solids42, 449 (1981)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

PDF, 127 KB

english, 1981

135

Semiconductor industry silicon: physical and thermodynamic properties : Carl L. Yaws, Larry L. Dickens, Ralph Lutwack and George Hsu. Solid-St. Technol.87 (January 1981)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

PDF, 127 KB

english, 1981

136

Diffusion theory of the steady-state flow of minority-carrier current through the Schottky barrier : Stanislaw Sikorski. Electron Technol.12 (3) 13 (1979)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

PDF, 127 KB

english, 1981

137

The diffusion of silicon in germanium : J. Raisanen, J. Hirvonen and A. Anttila. Solid-St. Electron.24, 333 (1981)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

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english, 1981

138

MOS threshold voltage monitoring : W. A. Bosenberg. RCA Rev.41, 563 (December 1980)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

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english, 1981

139

Failure analysis techniques applied to expoxy encapsulated thick-film hybrids : Alan G. Brown. Solid-St. Technol.136 (February 1981)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

PDF, 127 KB

english, 1981

140

Electronic characterization of double-gate thin film transistors : Inan Chen and Fang C. Luo. Solid-St. Electron.24, 257 (1981)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

PDF, 127 KB

english, 1981

141

Progress in and technology of low-cost silver containing thick-film conductors : Barry E. Taylor, John J. Felten and John R. Larry. IEEE Trans. Components, Hybrids, Manuf. Technol.CHMT-3 (4) 504 (December 1980)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

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english, 1981

142

Plasma deposition of silicon dioxide and silicon nitride films : Evert P. G. T. van de Ven. Solid-St. Technol. 167 (April 1981)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

PDF, 137 KB

english, 1981

143

Ni-P as a new material for thick film technology : I. Barycka, B. Holodnik and A. Misiuk. Electrocomponent Sci. Technol.7, 221 (1981)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

PDF, 137 KB

english, 1981

144

Strain sensitivity of thick-film resistors : Jayant S. Shah. IEEE Trans. Components, Hybrids, Manuf. Technol.CHMT-3 (4) 554 (December 1980)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

PDF, 137 KB

english, 1981

145

Origins and minimization of defects in sputtered thin films : Ronald S. Nowicki. Solid-St. Technol.83 (December 1980)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

PDF, 137 KB

english, 1981

146

A novel approach for higher yield in thick-film resistors : A. K. Matkari, S. K. Mithal and C. Kasarbada. Microelectron. J.12 (2) 32 (1981)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

PDF, 129 KB

english, 1981

147

A low-leakage-current CdSe thin film transistor : F. C. Luo, D. D. Hoesly and I. Chen. Solid-St. Electron.24, 461 (1981)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

PDF, 129 KB

english, 1981

148

A computer-aided design system for hybrid circuits : John C. Hurt and Clayton L. Mohr. IEEE Trans. Components, Hybrids Manuf. Technol.CHMT-3 (4) 525 (December 1980)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

PDF, 129 KB

english, 1981

149

Face-down TAB for hybrids : Jack J. Dais, James S. Erich and Donald Jaffe. IEEE Trans. Components, Hybrids Manuf. Technol.CHMT-3 (4) 623 (December 1980)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

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english, 1981

150

Base metal thick film conductors : S. J. Stein, C. Huang and L. Cang. Solid-St. Technol.73 (January 1981)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

PDF, 129 KB

english, 1981

151

Electron beam finds memory faults, reconfigures chips : John G. Posa. Electronics37 (19 May 1981)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

PDF, 129 KB

english, 1981

152

Growth and characterization of large diameter undoped semi-insulating GaAs for direct ion implanted FET technology : R. N. Thomas, H. M. Hobgood, G. W. Eldridge, D. L. Barrett and T. T. Braggins. Solid-St. Electron.24, 387 (1981)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

PDF, 256 KB

english, 1981

153

Contribution to range statistics of Boron implanted into Silicon at high energies : A. G. K. Lutsch, C. A. B. Ball, F. D. Auret and H. C. Snyman. Microelectron. J.12 (2) 25 (1981)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

PDF, 126 KB

english, 1981

154

Ohmic contacts to Si-implanted InP : Eiichi Yamaguchi, Takashi Nishioka and Yoshiro Ohmachi. Solid-St. Electron.24, 263 (1981)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

PDF, 126 KB

english, 1981

155

Superfast annealing : Walter L. Brown. IEEE Spectrum50 (April 1981)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

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english, 1981

156

A new production technique: ion milling. Part II—Applications : D. Bollinger and R. Fink. Solid-St. Technol.97 (December 1980)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

PDF, 126 KB

english, 1981

157

Raman spectra of Si-implanted silicon on sapphire : Y. Ohmura, T. Inoue and T. Yoshii. Solid-St. Commun.37, 583 (1981)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

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english, 1981

158

Electron beam lithography at the Rutherford Laboratory : R. A. Lawes. Circuit World7 (3) 60 (1981)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

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english, 1981

159

Base component of gain and delay time in base-implanted bipolar transistors : M. I. Elmasry and D. J. Roulston. Solid-St. Electron.24, 371 (1981)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

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english, 1981

160

Trimming behaviour and post-trim characteristics of Ta2N resistors on silicon : Ami Kestenbaum and Thomas F. Baer. IEEE Trans. Components, Hybrids, Manuf. Technol.CHMT-3 (4) 637 (December 1980)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

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english, 1981

161

Dose accuracy and doping uniformity of ion implantation equipment : D. S. Perloff, J. N. Gan and F. E. Wahl. Solid-St. Technol.112 (February 1981)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

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english, 1981

162

Introduction to reactive ion beam etching : D. F. Downey, W. R. Bottoms and P. R. Hanley. Solid-St. Technol.121 (February 1981)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

PDF, 52 KB

english, 1981

163

Ion implantation for GaAs field effect transistors and integrated circuits : M. Berth and C. Venger. Acta Electron.23 (1) 23 (1980)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

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english, 1981

164

Improved laser trimming geometry for thick film resistors—philosophy and example : R. G. Aggleton. Circuit World7 (2) 11 (1981)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

PDF, 52 KB

english, 1981

165

Silicon temperature sensors require little compensation : John Gosch. Electronics3E (5 May 1981)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

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english, 1981

166

CAD station aims at VLSI design : Martin Marshall. Electronics171 (7 April 1981)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

PDF, 120 KB

english, 1981

167

Mobility of majority carriers in doped noncompensated silicon : T. I. Tosic, D. A. Tjapkin and M. M. Jevtic. Solid-St. Electron.24, 577 (1981)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

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english, 1981

168

Electron light scattering from doped silicon : I. P. Ipatova, A. V. Subashiev and V. A. Voitenko. Solid-St. Commun.37, 893 (1981)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

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english, 1981

169

The role of transport in very small devices for VLSI : D. K. Ferry and H. L. Grubin. Microelectron. J.12 (2) 5 (1981)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

PDF, 134 KB

english, 1981

170

On the correlation of “hot” and “cold” electron-hole drop densities in uniaxially stressed silicon : J. Wagner, A. Forchel and R. Sauer. Solid-St. Commun.36, 917 (1980)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

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english, 1981

171

Analysis of the effect of mechanical stress on the effective mobility of charge carriers in inversion layers of P/MOS structures : Wojciech Wlodarski and Bogdan Moeschke. Electron. Technol.12 (3) 31 (1979)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

PDF, 131 KB

english, 1981

172

Monolithically integrated circuits on gallium-arsenide basis, part 2 : J. Herzog. Nach. Elektron.3, 95 (1981) (in German)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

PDF, 257 KB

english, 1981

173

A physical interpretation of dispersive transport in disordered semiconductors : T. Tiedje and A. Rose. Solid-St. Commun.37, 49 (1980)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

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english, 1981

174

Thick-film thermistor and its applications : Akira Ikegami, Hideo Arima, Hiromi Tosaki, Yoshitaka Matsuoka, Mitsuro Ai, Hitoshi Minorikawa and Yoshio Asahino. IEEE Trans. Components, Hybrids, Manuf. Technol.CHMT-3 (4) 541 (December 1980)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

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english, 1981

175

New approach to thick film resistor design : Electron. Prod.29 (April 1981)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

PDF, 137 KB

english, 1981

176

Membrane touch switches: thick-film materials systems and processing options : W. T. Hicks, Trevor R. Allington and Van Johnson. IEEE Trans. Components, Hybrids, Manuf. Technol.CHMT-3 (4) 518 (December 1980)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

PDF, 137 KB

english, 1981

177

Surface enhanced and disorder induced Raman scattering from silver films : I. Pockrand and A. Otto. Solid-St. Commun.37, 109 (1981)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

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english, 1981

178

Investigation of the possibility of the laser trimming of ceramic capacitors : Wieslaw Wolinski, Marian Nowicki, Zygmunt Niechoda, Jerzy Lemanowicz and Janusz Zietek. Electron Technol.12 (3) 121 (1979)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

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english, 1981

179

Transmission electron microscopy observations of lowtemperature ion implanted (100) silicon : M. Servidori and I. Vecchi. Solid-St. Electron.24, 329 (1981)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

PDF, 126 KB

english, 1981

180

Change of the electron effective mass in extremely heavily doped n-type Si obtained by ion implantation and laser annealing: M. Miyao, T. Motooka, N. Natsuaki and T. Tokuyama. Solid-St. Commun.37, 605 (1981)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

PDF, 126 KB

english, 1981

181

Uniform aluminum deposits on large non-planar and planar polyimide substrates by physical vapor deposition : Gerald J. Hale. Solid-St. Technol.141 (February 1981)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

PDF, 131 KB

english, 1981

182

C-MOS a-d converter interfaces easily with many microprocessors: Thomas M. Frederiksen. Electronics150 (24 March 1981)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

PDF, 119 KB

english, 1981

183

Transport equations for the analysis of heavily doped semiconductor devices : M. S. Lundstrom, R. J. Schwartz and J. L. Gray. Solid-St. Electron.24, 195 (1981)

Journal:

Microelectronics Reliability

Year:

1981

Language:

english

File:

PDF, 265 KB

english, 1981