Volume 5; Issue 4

Microelectronics Reliability

Volume 5; Issue 4

1

Modern basic concepts in component part reliability

Journal:

Microelectronics Reliability

Year:

1966

Language:

english

File:

PDF, 911 KB

english, 1966

2

Laser machining of thin films

K. Board, W.G. Townsend

Journal:

Microelectronics Reliability

Year:

1966

Language:

english

File:

PDF, 1.23 MB

english, 1966

3

Continuous electron beam processing plant for plane thin-film resistors

M. von Ardenne, U. Heisig, S. Panzer, K. Jessat, G. Bahr, H. Döhler

Journal:

Microelectronics Reliability

Year:

1966

Language:

english

File:

PDF, 1.39 MB

english, 1966

4

Multiple faults and confidence levels resolution of a paradox

N.H. Briggs, J. Yarnell

Journal:

Microelectronics Reliability

Year:

1966

Language:

english

File:

PDF, 110 KB

english, 1966

5

Measurement of minority carrier lifetime with a non-ohmic contact and an electron beam

Journal:

Microelectronics Reliability

Year:

1966

Language:

english

File:

PDF, 315 KB

english, 1966

6

Failure mechanisms in silicon transistors deduced from step stress tests

M.R.P. Young, O.M. Elkins

Journal:

Microelectronics Reliability

Year:

1966

Language:

english

File:

PDF, 765 KB

english, 1966

7

Quantitative measurements by scanning electron microscopy—I. The use of conductivity maps

P.R. Thornton, K.A. Hughes, D.V. Sulway, R.C. Wayte

Journal:

Microelectronics Reliability

Year:

1966

Language:

english

File:

PDF, 444 KB

english, 1966

8

Quantitative measurements by scanning electron microscopy-II. The use of emissive micrographs

P.R. Thornton, N.F.B. Neve, D.V. Sulway

Journal:

Microelectronics Reliability

Year:

1966

Language:

english

File:

PDF, 630 KB

english, 1966

9

The electrical properties of vacuum and chemically deposited thin and thick resistive films

Journal:

Microelectronics Reliability

Year:

1966

Language:

english

File:

PDF, 1.45 MB

english, 1966

10

Localized breakdown in Ge mesa diodes due to inclusions

D.V. Sulway, I.G. Davies, K.A. Hughes, P.R. Thornton, B.R. Holeman

Journal:

Microelectronics Reliability

Year:

1966

Language:

english

File:

PDF, 587 KB

english, 1966

11

The use of equivalent networks to minimize the tolerance of passive thin film circuits

M.R. Neuman, Wen-Hsiung Ko

Journal:

Microelectronics Reliability

Year:

1966

Language:

english

File:

PDF, 333 KB

english, 1966

12

A vapour etching technique for the photolithography of silicon dioxide

P.J. Holmes, J.E. Snell

Journal:

Microelectronics Reliability

Year:

1966

Language:

english

File:

PDF, 365 KB

english, 1966

13

A new functional device performing a flip-flop circuit function

Journal:

Microelectronics Reliability

Year:

1966

Language:

english

File:

PDF, 293 KB

english, 1966

14

Optical alignment equipment for interconnecting semiconductor integrated circuits at slice level

Journal:

Microelectronics Reliability

Year:

1966

Language:

english

File:

PDF, 220 KB

english, 1966

15

Physics of failure and accelerated testing : G. E. Best, G. R. Bretts and H. M. Lampert. Electro-Technology (October 1965), p. 79

Journal:

Microelectronics Reliability

Year:

1966

Language:

english

File:

PDF, 81 KB

english, 1966

16

Fundamental properties of microsystems with distributed resistances and capacities (Part 1) : W. Francke and E. Köhler. Nachrichtentechnik16, No. 4 (1966), p. 134. (In German.)

Journal:

Microelectronics Reliability

Year:

1966

Language:

english

File:

PDF, 81 KB

english, 1966

17

Reliability of communication equipment as seen from an economic point of view : H. Weiher. Nachrichtentechnik16, No. 2 (1966), p. 46. (In German.)

Journal:

Microelectronics Reliability

Year:

1966

Language:

english

File:

PDF, 81 KB

english, 1966

18

The chemistry of failure of aluminium electrolytic capacitors : R. S. Alwitt and R. G. Hills. IEEE Transactions on Parts, Materials and PackagingPMP-1, No. 2 (September 1965), p. 28

Journal:

Microelectronics Reliability

Year:

1966

Language:

english

File:

PDF, 81 KB

english, 1966

19

Defect interactions and precipitation in semiconductors : R. A. Swalin and R. D. Weltzin. Progress in Solid State Chemistry2, (1965), p. 175

Journal:

Microelectronics Reliability

Year:

1966

Language:

english

File:

PDF, 81 KB

english, 1966

20

Electron microscopic study of precipitates and defects in germanium and silicon : R. D. Weltzin, R. A. Swalin and T. E. Hutchinson. Acta Metallurgica13, No. 2 (February 1965), p. 115

Journal:

Microelectronics Reliability

Year:

1966

Language:

english

File:

PDF, 176 KB

english, 1966

21

Open-base breakdown in diffused n-p-n junction transistors : D. P. Kennedy and R. R. O'Brien. International Journal of Electronics18, No. 2 (February 1965), p. 133

Journal:

Microelectronics Reliability

Year:

1966

Language:

english

File:

PDF, 98 KB

english, 1966

22

The role of the ionization of defects in causing systematic differences in the semiconductor properties of undoped compounds : F. A. Kröger. J. Phys. Chem. Solids26 (1965), p. 1707

Journal:

Microelectronics Reliability

Year:

1966

Language:

english

File:

PDF, 98 KB

english, 1966

23

The direct observation of electrical leakage paths due to crystal defects by use of the scanning electron microscope : I. G. Davies, K. A. Hughes, D. V. Sulway and P. R. Thornton. Solid-State Electronics9 (1966), p. 275

Journal:

Microelectronics Reliability

Year:

1966

Language:

english

File:

PDF, 98 KB

english, 1966

24

Test-system design : D. K. Cockram. G.E.C. Journal of Science and Technology33, No. 1 (1966), p. 9

Journal:

Microelectronics Reliability

Year:

1966

Language:

english

File:

PDF, 98 KB

english, 1966

25

Optimizing the location of faults of electronic equipment using the theory of information : J. Göller and K. Karl. Nachrichtentechnik15, No. 12 (1965), p. 455. (In German.)

Journal:

Microelectronics Reliability

Year:

1966

Language:

english

File:

PDF, 98 KB

english, 1966

26

Better quality, lower costs, through designer-fabricator communication : L. V. Mason. Transactions of the American Society for Quality Control Technical Conference (May 1965), p. 639

Journal:

Microelectronics Reliability

Year:

1966

Language:

english

File:

PDF, 192 KB

english, 1966

27

On the reliability of polymorphic systems : P. D. Welch. IBM Systems Journal4, No. 1 (1965), p. 43

Journal:

Microelectronics Reliability

Year:

1966

Language:

english

File:

PDF, 95 KB

english, 1966

28

Worst-case circuit design : J. B. Atkins. IEEE Spectrum2, No. 3 (March 1965), p. 152

Journal:

Microelectronics Reliability

Year:

1966

Language:

english

File:

PDF, 95 KB

english, 1966

29

Possibilities and limits of increasing reliability in communication engineering by redundancy (Part 1) : H. Weiher. Nachrichtentechnik16, No. 4 (1966), p. 152. (In German.)

Journal:

Microelectronics Reliability

Year:

1966

Language:

english

File:

PDF, 95 KB

english, 1966

30

Principles of majority logic passive redundancy : K. G. Nichols. Applications of Microelectronics Symposium, University of Southampton. I.E.E. Conference Publication No. 14 (21–23 September 1965), p. 24/1

Journal:

Microelectronics Reliability

Year:

1966

Language:

english

File:

PDF, 95 KB

english, 1966

31

Programmed testing of integrated circuits : J. Bryson. Electro-Technology (October 1965), p. 104

Journal:

Microelectronics Reliability

Year:

1966

Language:

english

File:

PDF, 95 KB

english, 1966

32

Infra-red testing of microcircuits : B. G. Marks, G. Revesz and M. Walker. Electro-Technology (October 1965), p. 112

Journal:

Microelectronics Reliability

Year:

1966

Language:

english

File:

PDF, 95 KB

english, 1966

33

The fly's-eye camera : J. Wuestenhagen. Elektro-Technische Zeitung, Ausgabe B17, No. 10 (7 May 1965), p. 294 (In German)

Journal:

Microelectronics Reliability

Year:

1966

Language:

english

File:

PDF, 95 KB

english, 1966

34

Å university clean room : Wen-Hsiung Ko, Eugene T. Yon and Michael R. Neuman. SCP and Solid-State Technology (January 1966), p. 33

Journal:

Microelectronics Reliability

Year:

1966

Language:

english

File:

PDF, 98 KB

english, 1966

35

Micromachining with a pulsed gas laser : H. A. Boot, D. M. Clunie and R. S. A. Thorn. Electronics Letters (January 1966), p. 1

Journal:

Microelectronics Reliability

Year:

1966

Language:

english

File:

PDF, 98 KB

english, 1966

36

Integrated circuits for high-speed digital systems : M. J. Lanigan, P. R. Horne, P. Cooke and B. Rowe. Applications of Microelectronics Symposium, University of Southampton. I.E.E. Conference Publication No. 14 (21–23 September 1965), p. 26/1

Journal:

Microelectronics Reliability

Year:

1966

Language:

english

File:

PDF, 98 KB

english, 1966

37

Resistances and capacitors for semiconductor block circuits : H. J. Hanisch. Nachrichtentechnik16, No. 2 (1966), p. 55. (In German.)

Journal:

Microelectronics Reliability

Year:

1966

Language:

english

File:

PDF, 98 KB

english, 1966

38

Observation of double injection in long p+pn+ diffused silicon junctions and some related effects : R. Y. Deshpande. Solid-State Electronics9 (1966), p. 265

Journal:

Microelectronics Reliability

Year:

1966

Language:

english

File:

PDF, 98 KB

english, 1966

39

Measurement of resistivity and mobility in silicon epitaxial layers on a control wafer : W. J. Patrick. Solid-State Electronics9 (1966), p. 203

Journal:

Microelectronics Reliability

Year:

1966

Language:

english

File:

PDF, 98 KB

english, 1966

40

The effect of heavy doping on the diffusion of impurities in silicon : M. F. Millea. J. Phys. Chem. Solids27 (1966), p. 315

Journal:

Microelectronics Reliability

Year:

1966

Language:

english

File:

PDF, 103 KB

english, 1966

41

Field effect studies of the oxidized silicon surface : J. Lindmayer. Solid-State Electronics9 (1966), p. 225

Journal:

Microelectronics Reliability

Year:

1966

Language:

english

File:

PDF, 103 KB

english, 1966

42

The origin of channel currents associated with p+ regions in silicon : A. S. Grove and D. J. Fitzgerald. IEEE Transactions on Electron DevicesED-12, No. 12 (December 1965), p. 619

Journal:

Microelectronics Reliability

Year:

1966

Language:

english

File:

PDF, 103 KB

english, 1966

43

Thermal growth and chemical etching of silicon dioxide films : Chao Chen Mai and James C. Looney. SCP and Solid-State Technology (January 1966), p. 19

Journal:

Microelectronics Reliability

Year:

1966

Language:

english

File:

PDF, 103 KB

english, 1966

44

An investigation of instability and charge motion in metal-silicon oxide-silicon structures : S. R. Hofstein. IEEE Transactions on Electron DevicesED-13, No. 12 (February 1966), p. 222

Journal:

Microelectronics Reliability

Year:

1966

Language:

english

File:

PDF, 207 KB

english, 1966

45

Influence of heat treatments and ionizing irradiations on the charge distribution and the number of surface states in the Si-SiO2 system : E. Kooi. IEEE Transactions on Electron DevicesED-13, No. 12 (February 1966), p. 238

Journal:

Microelectronics Reliability

Year:

1966

Language:

english

File:

PDF, 106 KB

english, 1966

46

Diffusion-induced imperfections in silicon : M. L. Joshi and F. Wilhelm. Journal of the Electrochemical Society112, No. 2 (February 1965), p. 185

Journal:

Microelectronics Reliability

Year:

1966

Language:

english

File:

PDF, 106 KB

english, 1966

47

The influence of oxidation rate and heat treatment on the Si surface potential in the Si-SiO2 system : A. G. Revesz and K. H. Zaininger. IEEE Transactions on Electron DevicesED-13, No. 12 (February 1966), p. 246

Journal:

Microelectronics Reliability

Year:

1966

Language:

english

File:

PDF, 106 KB

english, 1966

48

Observations on phosphorus stabilized SiO2 films : Michael Yamin. IEEE Transactions on Electron Devices. ED-13, (February 1966), p. 256

Journal:

Microelectronics Reliability

Year:

1966

Language:

english

File:

PDF, 210 KB

english, 1966

49

Microstructural properties of thermally grown silicon dioxide layers : P. Balk, C. F. Aliotta and L. V. Gregor. Transactions of the Metallurgical Society of AIME233, No. 3 (March 1965), p. 563

Journal:

Microelectronics Reliability

Year:

1966

Language:

english

File:

PDF, 106 KB

english, 1966

50

Dielectric relaxation in thermally grown SiO2 films : P. J. Burkhardt. IEEE Transactions on Electron DevicesED-13, No. 12 (February 1966), p. 268

Journal:

Microelectronics Reliability

Year:

1966

Language:

english

File:

PDF, 106 KB

english, 1966

51

Properties of gold in silicon : W. M. Bullis. Solid-State Electronics9 (1966), p. 143

Journal:

Microelectronics Reliability

Year:

1966

Language:

english

File:

PDF, 106 KB

english, 1966

52

The problem of silicon evaporation in producing epitaxial films : A. I. Petrin and G. A. Kurov. Crystallography10, No. 5 (1965), p. 754. (In Russian.)

Journal:

Microelectronics Reliability

Year:

1966

Language:

english

File:

PDF, 99 KB

english, 1966

53

Introducing m.o.s.t. devices : M. R. Harknett. Electronics and Power (January 1966), p. 3

Journal:

Microelectronics Reliability

Year:

1966

Language:

english

File:

PDF, 99 KB

english, 1966

54

Applications of MOS Fet's in microelectronics : R. D. Lohman. SCP and Solid-State Technology (March 1966), p. 23

Journal:

Microelectronics Reliability

Year:

1966

Language:

english

File:

PDF, 99 KB

english, 1966

55

Metal oxide silicon integrated circuits : Howard Z. Bogert, Jr. SCP and Solid-State Technology (March 1966), p. 30

Journal:

Microelectronics Reliability

Year:

1966

Language:

english

File:

PDF, 99 KB

english, 1966

56

The transient response of insulated-gate field-effect transistors : Thomas J. O'Reilly. Solid-State Electronics8 (1965), p. 947

Journal:

Microelectronics Reliability

Year:

1966

Language:

english

File:

PDF, 99 KB

english, 1966

57

High-speed, cost-orientated integrated circuits : G. C. Padwick. Applications of Microelectronics Symposium, University of Southampton, I.E.E. Conference Publication No. 14 (21–23 September 1965), p. 29/1

Journal:

Microelectronics Reliability

Year:

1966

Language:

english

File:

PDF, 180 KB

english, 1966

58

Liquid cooling of semiconductor devices : J. G. Fairhurst. Applications of Microelectronics Symposium, University of Southampton. I.E.E. Conference Publication No. 14 (21–23 September 1965), p. 10/1

Journal:

Microelectronics Reliability

Year:

1966

Language:

english

File:

PDF, 82 KB

english, 1966

59

Transients in thin-film RC networks : F. A. Lindholm and W. W. Happ. Electro-Technology (August 1965), p. 38

Journal:

Microelectronics Reliability

Year:

1966

Language:

english

File:

PDF, 82 KB

english, 1966

60

High resistivity tantalum films : H. J. Schutze. Vakuum Technik (December 1965), p. 213. (In German.)

Journal:

Microelectronics Reliability

Year:

1966

Language:

english

File:

PDF, 82 KB

english, 1966

61

The effect of composition on the temperature coefficient of resistance of NiCr films : D. S. Campbell and B. Hendry. British Journal of Applied Physics (November 1965), p. 1719

Journal:

Microelectronics Reliability

Year:

1966

Language:

english

File:

PDF, 82 KB

english, 1966

62

Liquid cooling of microcircuits, including the use of nucleate boiling : G. G. Bloodworth and M. J. Cook. Applications of Microelectronics Symposium, University of Southampton. I.E.E. Conference Publication No. 14 (21–23 September 1965), p. 9/1

Journal:

Microelectronics Reliability

Year:

1966

Language:

english

File:

PDF, 180 KB

english, 1966

63

Automatic control and monitoring system for thin-film deposition : H. H. A. Bath, J. English and W. Steckelmacher. Electronic Components (March 1966), p. 239

Journal:

Microelectronics Reliability

Year:

1966

Language:

english

File:

PDF, 100 KB

english, 1966

64

Surface photovoltage measurements in vapour-deposited CdS : A. Waxman. Solid-State Electronics9 (1966), p. 303

Journal:

Microelectronics Reliability

Year:

1966

Language:

english

File:

PDF, 100 KB

english, 1966

65

A revolving multiple electron gun for use in the deposition of thin polymer films : D. S. Allam and P. R. Stuart. Journal of Scientific Instruments (November 1965), p. 812

Journal:

Microelectronics Reliability

Year:

1966

Language:

english

File:

PDF, 100 KB

english, 1966

66

Applications of photo-etching in the manufacture, interconnection and packaging of microcircuits : W. A. Strauss, Jr. SCP and Solid-State Technology (February 1966), p. 15

Journal:

Microelectronics Reliability

Year:

1966

Language:

english

File:

PDF, 100 KB

english, 1966

67

The design of a 100 Mc/s thin-film integrated amplifier : R. C. Bowes and J. W. Granville. Applications of Microelectronics Symposium, University of Southampton, I.E.E. Conference Publication No. 14 (21–23 September 1965), p. 6/1

Journal:

Microelectronics Reliability

Year:

1966

Language:

english

File:

PDF, 99 KB

english, 1966

68

An experimental computer controlled trunk exchange : N. West. Applications of Microelectronics Symposium, University of Southampton. I.E.E. Conference Publication No. 14 (21–23 September 1965), p. 20/1

Journal:

Microelectronics Reliability

Year:

1966

Language:

english

File:

PDF, 99 KB

english, 1966

69

Reducing analog IC cost with multipurpose chips : Grover Kennett. Electronics (21 March 1966), p. 84

Journal:

Microelectronics Reliability

Year:

1966

Language:

english

File:

PDF, 99 KB

english, 1966

70

A digital I.F. system for use in a thin-film radar receiver : J. Tomlinson. Applications of Micro-electronics Symposium, University of Southampton. I.E.E. Conference Publication No. 14 (21–23 September 1965), p. 4/1

Journal:

Microelectronics Reliability

Year:

1966

Language:

english

File:

PDF, 99 KB

english, 1966

71

A solid state store : A. W. Rich. Applications of Microelectronics Symposium, University of Southampton. I.E.E. Conference Publication No. 14 (21–23 September 1965), p. 17/1

Journal:

Microelectronics Reliability

Year:

1966

Language:

english

File:

PDF, 106 KB

english, 1966

72

A 28,000 channel frequency synthesizer in 10 cubic inches : D. J. Martin. Applications of Microelectronics Symposium, University of Southampton. I.E.E. Conference Publication No. 14 (21–23 September 1965), p. 15/1

Journal:

Microelectronics Reliability

Year:

1966

Language:

english

File:

PDF, 106 KB

english, 1966

73

Solid circuit design considerations : P. Cooke, J. D. Evans, M. J. Gay and J. S. Brothers. Applications of Microelectronics Symposium, University of Southampton. I.E.E. Conference Publication No. 14 (21–23 September 1965), p. 11/1

Journal:

Microelectronics Reliability

Year:

1966

Language:

english

File:

PDF, 106 KB

english, 1966

74

A 180-stage integrated thin-film scan generator : P. K. Weimer, Fellow, IEEE, G. Sadasiv, L. Meray-Horvath and W. S. Homa. Proceedings of the IEEE54, No. 3 (March 1966), p. 354

Journal:

Microelectronics Reliability

Year:

1966

Language:

english

File:

PDF, 203 KB

english, 1966

75

The use of amplifier blocks as standard components : R. C. Foss, P. Cooke and M. J. Gay. Applications of Microelectronics Symposium, University of Southampton. I.E.E. Conference Publication No. 14 (21–23 September), p. 12/1

Journal:

Microelectronics Reliability

Year:

1966

Language:

english

File:

PDF, 99 KB

english, 1966

76

Microelectronic integrated system cells (MISC) : R. Matthews. Applications of Microelectronics Symposium, University of Southampton. I.E.E. Conference Publication No. 14 (21–23 September 1965), p. 30/1

Journal:

Microelectronics Reliability

Year:

1966

Language:

english

File:

PDF, 99 KB

english, 1966

77

The manufacture of thin-film circuits for use in airborne equipment : S. G. Ayling and J. W. James. Applications of Microelectronic Symposium, University of Southampton. I.E.E. Conference Publication No. 14 (21–23 September 1965), p. 8/1

Journal:

Microelectronics Reliability

Year:

1966

Language:

english

File:

PDF, 99 KB

english, 1966

78

Some of the papers to be published in future issues

Journal:

Microelectronics Reliability

Year:

1966

Language:

english

File:

PDF, 27 KB

english, 1966