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Volume 5; Issue 4
Main
Microelectronics Reliability
Volume 5; Issue 4
Microelectronics Reliability
Volume 5; Issue 4
1
Modern basic concepts in component part reliability
C.M. Ryerson
Journal:
Microelectronics Reliability
Year:
1966
Language:
english
File:
PDF, 911 KB
Your tags:
english, 1966
2
Laser machining of thin films
K. Board
,
W.G. Townsend
Journal:
Microelectronics Reliability
Year:
1966
Language:
english
File:
PDF, 1.23 MB
Your tags:
english, 1966
3
Continuous electron beam processing plant for plane thin-film resistors
M. von Ardenne
,
U. Heisig
,
S. Panzer
,
K. Jessat
,
G. Bahr
,
H. Döhler
Journal:
Microelectronics Reliability
Year:
1966
Language:
english
File:
PDF, 1.39 MB
Your tags:
english, 1966
4
Multiple faults and confidence levels resolution of a paradox
N.H. Briggs
,
J. Yarnell
Journal:
Microelectronics Reliability
Year:
1966
Language:
english
File:
PDF, 110 KB
Your tags:
english, 1966
5
Measurement of minority carrier lifetime with a non-ohmic contact and an electron beam
C. Munakata
Journal:
Microelectronics Reliability
Year:
1966
Language:
english
File:
PDF, 315 KB
Your tags:
english, 1966
6
Failure mechanisms in silicon transistors deduced from step stress tests
M.R.P. Young
,
O.M. Elkins
Journal:
Microelectronics Reliability
Year:
1966
Language:
english
File:
PDF, 765 KB
Your tags:
english, 1966
7
Quantitative measurements by scanning electron microscopy—I. The use of conductivity maps
P.R. Thornton
,
K.A. Hughes
,
D.V. Sulway
,
R.C. Wayte
Journal:
Microelectronics Reliability
Year:
1966
Language:
english
File:
PDF, 444 KB
Your tags:
english, 1966
8
Quantitative measurements by scanning electron microscopy-II. The use of emissive micrographs
P.R. Thornton
,
N.F.B. Neve
,
D.V. Sulway
Journal:
Microelectronics Reliability
Year:
1966
Language:
english
File:
PDF, 630 KB
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english, 1966
9
The electrical properties of vacuum and chemically deposited thin and thick resistive films
D.E.H. Jones
Journal:
Microelectronics Reliability
Year:
1966
Language:
english
File:
PDF, 1.45 MB
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english, 1966
10
Localized breakdown in Ge mesa diodes due to inclusions
D.V. Sulway
,
I.G. Davies
,
K.A. Hughes
,
P.R. Thornton
,
B.R. Holeman
Journal:
Microelectronics Reliability
Year:
1966
Language:
english
File:
PDF, 587 KB
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english, 1966
11
The use of equivalent networks to minimize the tolerance of passive thin film circuits
M.R. Neuman
,
Wen-Hsiung Ko
Journal:
Microelectronics Reliability
Year:
1966
Language:
english
File:
PDF, 333 KB
Your tags:
english, 1966
12
A vapour etching technique for the photolithography of silicon dioxide
P.J. Holmes
,
J.E. Snell
Journal:
Microelectronics Reliability
Year:
1966
Language:
english
File:
PDF, 365 KB
Your tags:
english, 1966
13
A new functional device performing a flip-flop circuit function
A. Ambroziak
Journal:
Microelectronics Reliability
Year:
1966
Language:
english
File:
PDF, 293 KB
Your tags:
english, 1966
14
Optical alignment equipment for interconnecting semiconductor integrated circuits at slice level
T.E. Price
Journal:
Microelectronics Reliability
Year:
1966
Language:
english
File:
PDF, 220 KB
Your tags:
english, 1966
15
Physics of failure and accelerated testing : G. E. Best, G. R. Bretts and H. M. Lampert. Electro-Technology (October 1965), p. 79
Journal:
Microelectronics Reliability
Year:
1966
Language:
english
File:
PDF, 81 KB
Your tags:
english, 1966
16
Fundamental properties of microsystems with distributed resistances and capacities (Part 1) : W. Francke and E. Köhler. Nachrichtentechnik16, No. 4 (1966), p. 134. (In German.)
Journal:
Microelectronics Reliability
Year:
1966
Language:
english
File:
PDF, 81 KB
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17
Reliability of communication equipment as seen from an economic point of view : H. Weiher. Nachrichtentechnik16, No. 2 (1966), p. 46. (In German.)
Journal:
Microelectronics Reliability
Year:
1966
Language:
english
File:
PDF, 81 KB
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english, 1966
18
The chemistry of failure of aluminium electrolytic capacitors : R. S. Alwitt and R. G. Hills. IEEE Transactions on Parts, Materials and PackagingPMP-1, No. 2 (September 1965), p. 28
Journal:
Microelectronics Reliability
Year:
1966
Language:
english
File:
PDF, 81 KB
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english, 1966
19
Defect interactions and precipitation in semiconductors : R. A. Swalin and R. D. Weltzin. Progress in Solid State Chemistry2, (1965), p. 175
Journal:
Microelectronics Reliability
Year:
1966
Language:
english
File:
PDF, 81 KB
Your tags:
english, 1966
20
Electron microscopic study of precipitates and defects in germanium and silicon : R. D. Weltzin, R. A. Swalin and T. E. Hutchinson. Acta Metallurgica13, No. 2 (February 1965), p. 115
Journal:
Microelectronics Reliability
Year:
1966
Language:
english
File:
PDF, 176 KB
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english, 1966
21
Open-base breakdown in diffused n-p-n junction transistors : D. P. Kennedy and R. R. O'Brien. International Journal of Electronics18, No. 2 (February 1965), p. 133
Journal:
Microelectronics Reliability
Year:
1966
Language:
english
File:
PDF, 98 KB
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english, 1966
22
The role of the ionization of defects in causing systematic differences in the semiconductor properties of undoped compounds : F. A. Kröger. J. Phys. Chem. Solids26 (1965), p. 1707
Journal:
Microelectronics Reliability
Year:
1966
Language:
english
File:
PDF, 98 KB
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23
The direct observation of electrical leakage paths due to crystal defects by use of the scanning electron microscope : I. G. Davies, K. A. Hughes, D. V. Sulway and P. R. Thornton. Solid-State Electronics9 (1966), p. 275
Journal:
Microelectronics Reliability
Year:
1966
Language:
english
File:
PDF, 98 KB
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english, 1966
24
Test-system design : D. K. Cockram. G.E.C. Journal of Science and Technology33, No. 1 (1966), p. 9
Journal:
Microelectronics Reliability
Year:
1966
Language:
english
File:
PDF, 98 KB
Your tags:
english, 1966
25
Optimizing the location of faults of electronic equipment using the theory of information : J. Göller and K. Karl. Nachrichtentechnik15, No. 12 (1965), p. 455. (In German.)
Journal:
Microelectronics Reliability
Year:
1966
Language:
english
File:
PDF, 98 KB
Your tags:
english, 1966
26
Better quality, lower costs, through designer-fabricator communication : L. V. Mason. Transactions of the American Society for Quality Control Technical Conference (May 1965), p. 639
Journal:
Microelectronics Reliability
Year:
1966
Language:
english
File:
PDF, 192 KB
Your tags:
english, 1966
27
On the reliability of polymorphic systems : P. D. Welch. IBM Systems Journal4, No. 1 (1965), p. 43
Journal:
Microelectronics Reliability
Year:
1966
Language:
english
File:
PDF, 95 KB
Your tags:
english, 1966
28
Worst-case circuit design : J. B. Atkins. IEEE Spectrum2, No. 3 (March 1965), p. 152
Journal:
Microelectronics Reliability
Year:
1966
Language:
english
File:
PDF, 95 KB
Your tags:
english, 1966
29
Possibilities and limits of increasing reliability in communication engineering by redundancy (Part 1) : H. Weiher. Nachrichtentechnik16, No. 4 (1966), p. 152. (In German.)
Journal:
Microelectronics Reliability
Year:
1966
Language:
english
File:
PDF, 95 KB
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english, 1966
30
Principles of majority logic passive redundancy : K. G. Nichols. Applications of Microelectronics Symposium, University of Southampton. I.E.E. Conference Publication No. 14 (21–23 September 1965), p. 24/1
Journal:
Microelectronics Reliability
Year:
1966
Language:
english
File:
PDF, 95 KB
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english, 1966
31
Programmed testing of integrated circuits : J. Bryson. Electro-Technology (October 1965), p. 104
Journal:
Microelectronics Reliability
Year:
1966
Language:
english
File:
PDF, 95 KB
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english, 1966
32
Infra-red testing of microcircuits : B. G. Marks, G. Revesz and M. Walker. Electro-Technology (October 1965), p. 112
Journal:
Microelectronics Reliability
Year:
1966
Language:
english
File:
PDF, 95 KB
Your tags:
english, 1966
33
The fly's-eye camera : J. Wuestenhagen. Elektro-Technische Zeitung, Ausgabe B17, No. 10 (7 May 1965), p. 294 (In German)
Journal:
Microelectronics Reliability
Year:
1966
Language:
english
File:
PDF, 95 KB
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english, 1966
34
Å university clean room : Wen-Hsiung Ko, Eugene T. Yon and Michael R. Neuman. SCP and Solid-State Technology (January 1966), p. 33
Journal:
Microelectronics Reliability
Year:
1966
Language:
english
File:
PDF, 98 KB
Your tags:
english, 1966
35
Micromachining with a pulsed gas laser : H. A. Boot, D. M. Clunie and R. S. A. Thorn. Electronics Letters (January 1966), p. 1
Journal:
Microelectronics Reliability
Year:
1966
Language:
english
File:
PDF, 98 KB
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english, 1966
36
Integrated circuits for high-speed digital systems : M. J. Lanigan, P. R. Horne, P. Cooke and B. Rowe. Applications of Microelectronics Symposium, University of Southampton. I.E.E. Conference Publication No. 14 (21–23 September 1965), p. 26/1
Journal:
Microelectronics Reliability
Year:
1966
Language:
english
File:
PDF, 98 KB
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37
Resistances and capacitors for semiconductor block circuits : H. J. Hanisch. Nachrichtentechnik16, No. 2 (1966), p. 55. (In German.)
Journal:
Microelectronics Reliability
Year:
1966
Language:
english
File:
PDF, 98 KB
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english, 1966
38
Observation of double injection in long p+pn+ diffused silicon junctions and some related effects : R. Y. Deshpande. Solid-State Electronics9 (1966), p. 265
Journal:
Microelectronics Reliability
Year:
1966
Language:
english
File:
PDF, 98 KB
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english, 1966
39
Measurement of resistivity and mobility in silicon epitaxial layers on a control wafer : W. J. Patrick. Solid-State Electronics9 (1966), p. 203
Journal:
Microelectronics Reliability
Year:
1966
Language:
english
File:
PDF, 98 KB
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english, 1966
40
The effect of heavy doping on the diffusion of impurities in silicon : M. F. Millea. J. Phys. Chem. Solids27 (1966), p. 315
Journal:
Microelectronics Reliability
Year:
1966
Language:
english
File:
PDF, 103 KB
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english, 1966
41
Field effect studies of the oxidized silicon surface : J. Lindmayer. Solid-State Electronics9 (1966), p. 225
Journal:
Microelectronics Reliability
Year:
1966
Language:
english
File:
PDF, 103 KB
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42
The origin of channel currents associated with p+ regions in silicon : A. S. Grove and D. J. Fitzgerald. IEEE Transactions on Electron DevicesED-12, No. 12 (December 1965), p. 619
Journal:
Microelectronics Reliability
Year:
1966
Language:
english
File:
PDF, 103 KB
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english, 1966
43
Thermal growth and chemical etching of silicon dioxide films : Chao Chen Mai and James C. Looney. SCP and Solid-State Technology (January 1966), p. 19
Journal:
Microelectronics Reliability
Year:
1966
Language:
english
File:
PDF, 103 KB
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english, 1966
44
An investigation of instability and charge motion in metal-silicon oxide-silicon structures : S. R. Hofstein. IEEE Transactions on Electron DevicesED-13, No. 12 (February 1966), p. 222
Journal:
Microelectronics Reliability
Year:
1966
Language:
english
File:
PDF, 207 KB
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english, 1966
45
Influence of heat treatments and ionizing irradiations on the charge distribution and the number of surface states in the Si-SiO2 system : E. Kooi. IEEE Transactions on Electron DevicesED-13, No. 12 (February 1966), p. 238
Journal:
Microelectronics Reliability
Year:
1966
Language:
english
File:
PDF, 106 KB
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english, 1966
46
Diffusion-induced imperfections in silicon : M. L. Joshi and F. Wilhelm. Journal of the Electrochemical Society112, No. 2 (February 1965), p. 185
Journal:
Microelectronics Reliability
Year:
1966
Language:
english
File:
PDF, 106 KB
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english, 1966
47
The influence of oxidation rate and heat treatment on the Si surface potential in the Si-SiO2 system : A. G. Revesz and K. H. Zaininger. IEEE Transactions on Electron DevicesED-13, No. 12 (February 1966), p. 246
Journal:
Microelectronics Reliability
Year:
1966
Language:
english
File:
PDF, 106 KB
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english, 1966
48
Observations on phosphorus stabilized SiO2 films : Michael Yamin. IEEE Transactions on Electron Devices. ED-13, (February 1966), p. 256
Journal:
Microelectronics Reliability
Year:
1966
Language:
english
File:
PDF, 210 KB
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english, 1966
49
Microstructural properties of thermally grown silicon dioxide layers : P. Balk, C. F. Aliotta and L. V. Gregor. Transactions of the Metallurgical Society of AIME233, No. 3 (March 1965), p. 563
Journal:
Microelectronics Reliability
Year:
1966
Language:
english
File:
PDF, 106 KB
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50
Dielectric relaxation in thermally grown SiO2 films : P. J. Burkhardt. IEEE Transactions on Electron DevicesED-13, No. 12 (February 1966), p. 268
Journal:
Microelectronics Reliability
Year:
1966
Language:
english
File:
PDF, 106 KB
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english, 1966
51
Properties of gold in silicon : W. M. Bullis. Solid-State Electronics9 (1966), p. 143
Journal:
Microelectronics Reliability
Year:
1966
Language:
english
File:
PDF, 106 KB
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english, 1966
52
The problem of silicon evaporation in producing epitaxial films : A. I. Petrin and G. A. Kurov. Crystallography10, No. 5 (1965), p. 754. (In Russian.)
Journal:
Microelectronics Reliability
Year:
1966
Language:
english
File:
PDF, 99 KB
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english, 1966
53
Introducing m.o.s.t. devices : M. R. Harknett. Electronics and Power (January 1966), p. 3
Journal:
Microelectronics Reliability
Year:
1966
Language:
english
File:
PDF, 99 KB
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english, 1966
54
Applications of MOS Fet's in microelectronics : R. D. Lohman. SCP and Solid-State Technology (March 1966), p. 23
Journal:
Microelectronics Reliability
Year:
1966
Language:
english
File:
PDF, 99 KB
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english, 1966
55
Metal oxide silicon integrated circuits : Howard Z. Bogert, Jr. SCP and Solid-State Technology (March 1966), p. 30
Journal:
Microelectronics Reliability
Year:
1966
Language:
english
File:
PDF, 99 KB
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english, 1966
56
The transient response of insulated-gate field-effect transistors : Thomas J. O'Reilly. Solid-State Electronics8 (1965), p. 947
Journal:
Microelectronics Reliability
Year:
1966
Language:
english
File:
PDF, 99 KB
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english, 1966
57
High-speed, cost-orientated integrated circuits : G. C. Padwick. Applications of Microelectronics Symposium, University of Southampton, I.E.E. Conference Publication No. 14 (21–23 September 1965), p. 29/1
Journal:
Microelectronics Reliability
Year:
1966
Language:
english
File:
PDF, 180 KB
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english, 1966
58
Liquid cooling of semiconductor devices : J. G. Fairhurst. Applications of Microelectronics Symposium, University of Southampton. I.E.E. Conference Publication No. 14 (21–23 September 1965), p. 10/1
Journal:
Microelectronics Reliability
Year:
1966
Language:
english
File:
PDF, 82 KB
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english, 1966
59
Transients in thin-film RC networks : F. A. Lindholm and W. W. Happ. Electro-Technology (August 1965), p. 38
Journal:
Microelectronics Reliability
Year:
1966
Language:
english
File:
PDF, 82 KB
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english, 1966
60
High resistivity tantalum films : H. J. Schutze. Vakuum Technik (December 1965), p. 213. (In German.)
Journal:
Microelectronics Reliability
Year:
1966
Language:
english
File:
PDF, 82 KB
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english, 1966
61
The effect of composition on the temperature coefficient of resistance of NiCr films : D. S. Campbell and B. Hendry. British Journal of Applied Physics (November 1965), p. 1719
Journal:
Microelectronics Reliability
Year:
1966
Language:
english
File:
PDF, 82 KB
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english, 1966
62
Liquid cooling of microcircuits, including the use of nucleate boiling : G. G. Bloodworth and M. J. Cook. Applications of Microelectronics Symposium, University of Southampton. I.E.E. Conference Publication No. 14 (21–23 September 1965), p. 9/1
Journal:
Microelectronics Reliability
Year:
1966
Language:
english
File:
PDF, 180 KB
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english, 1966
63
Automatic control and monitoring system for thin-film deposition : H. H. A. Bath, J. English and W. Steckelmacher. Electronic Components (March 1966), p. 239
Journal:
Microelectronics Reliability
Year:
1966
Language:
english
File:
PDF, 100 KB
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english, 1966
64
Surface photovoltage measurements in vapour-deposited CdS : A. Waxman. Solid-State Electronics9 (1966), p. 303
Journal:
Microelectronics Reliability
Year:
1966
Language:
english
File:
PDF, 100 KB
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english, 1966
65
A revolving multiple electron gun for use in the deposition of thin polymer films : D. S. Allam and P. R. Stuart. Journal of Scientific Instruments (November 1965), p. 812
Journal:
Microelectronics Reliability
Year:
1966
Language:
english
File:
PDF, 100 KB
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english, 1966
66
Applications of photo-etching in the manufacture, interconnection and packaging of microcircuits : W. A. Strauss, Jr. SCP and Solid-State Technology (February 1966), p. 15
Journal:
Microelectronics Reliability
Year:
1966
Language:
english
File:
PDF, 100 KB
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english, 1966
67
The design of a 100 Mc/s thin-film integrated amplifier : R. C. Bowes and J. W. Granville. Applications of Microelectronics Symposium, University of Southampton, I.E.E. Conference Publication No. 14 (21–23 September 1965), p. 6/1
Journal:
Microelectronics Reliability
Year:
1966
Language:
english
File:
PDF, 99 KB
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english, 1966
68
An experimental computer controlled trunk exchange : N. West. Applications of Microelectronics Symposium, University of Southampton. I.E.E. Conference Publication No. 14 (21–23 September 1965), p. 20/1
Journal:
Microelectronics Reliability
Year:
1966
Language:
english
File:
PDF, 99 KB
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english, 1966
69
Reducing analog IC cost with multipurpose chips : Grover Kennett. Electronics (21 March 1966), p. 84
Journal:
Microelectronics Reliability
Year:
1966
Language:
english
File:
PDF, 99 KB
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english, 1966
70
A digital I.F. system for use in a thin-film radar receiver : J. Tomlinson. Applications of Micro-electronics Symposium, University of Southampton. I.E.E. Conference Publication No. 14 (21–23 September 1965), p. 4/1
Journal:
Microelectronics Reliability
Year:
1966
Language:
english
File:
PDF, 99 KB
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english, 1966
71
A solid state store : A. W. Rich. Applications of Microelectronics Symposium, University of Southampton. I.E.E. Conference Publication No. 14 (21–23 September 1965), p. 17/1
Journal:
Microelectronics Reliability
Year:
1966
Language:
english
File:
PDF, 106 KB
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english, 1966
72
A 28,000 channel frequency synthesizer in 10 cubic inches : D. J. Martin. Applications of Microelectronics Symposium, University of Southampton. I.E.E. Conference Publication No. 14 (21–23 September 1965), p. 15/1
Journal:
Microelectronics Reliability
Year:
1966
Language:
english
File:
PDF, 106 KB
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english, 1966
73
Solid circuit design considerations : P. Cooke, J. D. Evans, M. J. Gay and J. S. Brothers. Applications of Microelectronics Symposium, University of Southampton. I.E.E. Conference Publication No. 14 (21–23 September 1965), p. 11/1
Journal:
Microelectronics Reliability
Year:
1966
Language:
english
File:
PDF, 106 KB
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english, 1966
74
A 180-stage integrated thin-film scan generator : P. K. Weimer, Fellow, IEEE, G. Sadasiv, L. Meray-Horvath and W. S. Homa. Proceedings of the IEEE54, No. 3 (March 1966), p. 354
Journal:
Microelectronics Reliability
Year:
1966
Language:
english
File:
PDF, 203 KB
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english, 1966
75
The use of amplifier blocks as standard components : R. C. Foss, P. Cooke and M. J. Gay. Applications of Microelectronics Symposium, University of Southampton. I.E.E. Conference Publication No. 14 (21–23 September), p. 12/1
Journal:
Microelectronics Reliability
Year:
1966
Language:
english
File:
PDF, 99 KB
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english, 1966
76
Microelectronic integrated system cells (MISC) : R. Matthews. Applications of Microelectronics Symposium, University of Southampton. I.E.E. Conference Publication No. 14 (21–23 September 1965), p. 30/1
Journal:
Microelectronics Reliability
Year:
1966
Language:
english
File:
PDF, 99 KB
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english, 1966
77
The manufacture of thin-film circuits for use in airborne equipment : S. G. Ayling and J. W. James. Applications of Microelectronic Symposium, University of Southampton. I.E.E. Conference Publication No. 14 (21–23 September 1965), p. 8/1
Journal:
Microelectronics Reliability
Year:
1966
Language:
english
File:
PDF, 99 KB
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english, 1966
78
Some of the papers to be published in future issues
Journal:
Microelectronics Reliability
Year:
1966
Language:
english
File:
PDF, 27 KB
Your tags:
english, 1966
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