Volume 21; Issue 9

Applied Physics Letters

Volume 21; Issue 9
1

Effect of channeling and irradiation temperature on the morphology of blisters in niobium

Kaminsky, M.
Journal:
Applied Physics Letters
Year:
1972
Language:
english
File:
PDF, 414 KB
english, 1972
2

Amplification at 1.06 μm using a Nd : glass thin-film waveguide

Yajima, Hiroyoshi
Journal:
Applied Physics Letters
Year:
1972
Language:
english
File:
PDF, 499 KB
english, 1972
3

n-p junction ir detectors made by proton bombardment of epitaxial PbTe

Logothetis, E.M.
Journal:
Applied Physics Letters
Year:
1972
Language:
english
File:
PDF, 492 KB
english, 1972
4

Electrical CO-mixing gas-dynamic laser

Brunet, H.
Journal:
Applied Physics Letters
Year:
1972
Language:
english
File:
PDF, 424 KB
english, 1972
5

Surface charge effects on the resistivity and Hall coefficient of thin silicon-on-sapphire films

Ham, W.E.
Journal:
Applied Physics Letters
Year:
1972
Language:
english
File:
PDF, 596 KB
english, 1972
6

Flux reversal in single-crystal MnBi platelets by vacuum deposition

Honda, Shigeo
Journal:
Applied Physics Letters
Year:
1972
Language:
english
File:
PDF, 470 KB
english, 1972
7

Mass motion as observed by light-beating spectroscopy

Ben-Yosef, N.
Journal:
Applied Physics Letters
Year:
1972
Language:
english
File:
PDF, 416 KB
english, 1972
8

Nonlinear loss in Nd-doped laser glass

Penzkofer, A.
Journal:
Applied Physics Letters
Year:
1972
Language:
english
File:
PDF, 594 KB
english, 1972
9

The effect of inhomogeneities in acoustic-surface-wave amplification

Burke, B.E.
Journal:
Applied Physics Letters
Year:
1972
Language:
english
File:
PDF, 447 KB
english, 1972
11

Instantaneous velocity correlations from a single dopplermeter

MacIntyre, Ferren
Journal:
Applied Physics Letters
Year:
1972
Language:
english
File:
PDF, 509 KB
english, 1972
13

Coincidence of Er : YAG laser emission with methane absorption at 1645.1 nm

White, Kenneth O.
Journal:
Applied Physics Letters
Year:
1972
Language:
english
File:
PDF, 355 KB
english, 1972
14

Electron energy relaxation times in GaAs and InP

Glover, G.H.
Journal:
Applied Physics Letters
Year:
1972
Language:
english
File:
PDF, 430 KB
english, 1972
15

Schottky barrier height dependence on Si crystal orientation

Gutknecht, P.
Journal:
Applied Physics Letters
Year:
1972
Language:
english
File:
PDF, 498 KB
english, 1972
16

Avalanche-injected hole current in SiO2

Verwey, J.F.
Journal:
Applied Physics Letters
Year:
1972
Language:
english
File:
PDF, 482 KB
english, 1972