Volume 3; Issue 9

Applied Physics Letters

Volume 3; Issue 9
2

ORIGIN OF STACKING FAULT IN EPITAXIALLY GROWN SILICON

Booker, G. R., Stickler, R.
Journal:
Applied Physics Letters
Year:
1963
Language:
english
File:
PDF, 380 KB
english, 1963
3

LASER ACTION IN Cl2 AND He[Single Bond]Cl2

Paananen, R. A., Tang, C. L., Horrigan, F. A.
Journal:
Applied Physics Letters
Year:
1963
Language:
english
File:
PDF, 352 KB
english, 1963
4

EFFECT OF AN ELECTRIC FIELD ON CREEP OF MgO SINGLE CRYSTALS

Neiman, A. S., Rothwell, W. S.
Journal:
Applied Physics Letters
Year:
1963
Language:
english
File:
PDF, 365 KB
english, 1963
5

THE EFFECT OF UNIAXIAL STRAIN ON THE THRESHOLD CURRENT AND OUTPUT OF GaAs LASERS

Ryan, F. M., Miller, R. C.
Journal:
Applied Physics Letters
Year:
1963
Language:
english
File:
PDF, 362 KB
english, 1963
6

STACKING FAULTS IN QUENCHED ALUMINUM

Strudel, J. L., Vincotte, F., Washburn, J.
Journal:
Applied Physics Letters
Year:
1963
Language:
english
File:
PDF, 423 KB
english, 1963
7

MULTIMODE OSCILLATION OF THE RUBY LASER NEAR THRESHOLD

Birnbaum, Milton, Stocker, Tom L.
Journal:
Applied Physics Letters
Year:
1963
Language:
english
File:
PDF, 416 KB
english, 1963
8

INFRARED InSb LASER DIODE IN HIGH MAGNETIC FIELDS

Phelan, R. J., Calawa, A. R., Rediker, R. H., Keyes, R. J., Lax, B.
Journal:
Applied Physics Letters
Year:
1963
Language:
english
File:
PDF, 355 KB
english, 1963
9

THORIUM DIFFUSION IN PYROLYTIC CARBON AND POROUS GRAPHITE

Truitt, J., Alton, G. D., Blood, C. M.
Journal:
Applied Physics Letters
Year:
1963
Language:
english
File:
PDF, 359 KB
english, 1963