Volume 30; Issue 11

Applied Physics Letters

Volume 30; Issue 11
1

A new acceptor level in indium-doped silicon

Year:
1977
Language:
english
File:
PDF, 524 KB
english, 1977
2

Photochemical diodes

Year:
1977
Language:
english
File:
PDF, 462 KB
english, 1977
3

Tunable uv generation in KB5O8⋅4H2O to 1966 Å

Year:
1977
Language:
english
File:
PDF, 319 KB
english, 1977
6

Creep curve of silicon wafers

Year:
1977
Language:
english
File:
PDF, 410 KB
english, 1977
7

Ion-implantation-induced lattice defects in PbTe

Year:
1977
Language:
english
File:
PDF, 493 KB
english, 1977
9

The low-lying electronic states of Ar2F

Year:
1977
Language:
english
File:
PDF, 421 KB
english, 1977
10

Information-storage device using surface diodes

Year:
1977
Language:
english
File:
PDF, 442 KB
english, 1977
12

High-temperature Nb3Sn thin-film SQUID’s

Year:
1977
Language:
english
File:
PDF, 419 KB
english, 1977
13

Conduction and trapping of electrons in highly stressed ultrathin films of thermal SiO2

Year:
1977
Language:
english
File:
PDF, 416 KB
english, 1977
16

The distribution of gold and oxygen in solid phase epitaxy Si films

Year:
1977
Language:
english
File:
PDF, 407 KB
english, 1977
19

Leaky-mode buried-heterostructure AlGaAs injection lasers

Year:
1977
Language:
english
File:
PDF, 425 KB
english, 1977