Volume 31; Issue 11

Applied Physics Letters

Volume 31; Issue 11
1

Molecular-beam epitaxy (MBE) of In1−xGaxAs and GaSb1−yAsy

Year:
1977
Language:
english
File:
PDF, 537 KB
english, 1977
4

Relaxation of photoexcited carriers in GaAs

Year:
1977
Language:
english
File:
PDF, 528 KB
english, 1977
10

Two-step annealing of arsenic-implanted 〈111〉 silicon

Year:
1977
Language:
english
File:
PDF, 389 KB
english, 1977
14

The role of E/p in waveguide CO2 TE lasers

Year:
1977
Language:
english
File:
PDF, 435 KB
english, 1977
15

Negative resistances in n-type CdCr2Se4 single crystals

Year:
1977
Language:
english
File:
PDF, 337 KB
english, 1977
16

The photothermophone, a device for absolute calibration of photoacoustic spectrometers

Year:
1977
Language:
english
File:
PDF, 423 KB
english, 1977
17

Improved heterostructure-laser light-output linearity by antireflective coating

Year:
1977
Language:
english
File:
PDF, 334 KB
english, 1977
18

Discharge-related limitations of CO2 optical gain in TE channel waveguides

Year:
1977
Language:
english
File:
PDF, 371 KB
english, 1977
19

Infrared four-wave mixing in liquid CO

Year:
1977
Language:
english
File:
PDF, 382 KB
english, 1977
20

Growth of platinum silicide under protective layers

Year:
1977
Language:
english
File:
PDF, 427 KB
english, 1977
22

An inverse ac Josephson effect voltage standard

Year:
1977
Language:
english
File:
PDF, 404 KB
english, 1977