Volume 34; Issue 10

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Applied Physics Letters
Volume 34; Issue 10

Applied Physics Letters

Volume 34; Issue 10

1

Calculation of the dynamics of surface melting during laser annealing

Surko, C. M., Simons, A. L., Auston, D. H., Golovchenko, J. A., Slusher, R. E., Venkatesan, T. N. C.

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 545 KB

english, 1979

2

Measurement of thin-film optical absorption at the air-film interface within the film and at the film-substrate interface

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 486 KB

english, 1979

3

Interface chemistry of metal-GaAs Schottky-barrier contacts

Waldrop, J. R., Grant, R. W.

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 449 KB

english, 1979

4

Optical properties of ultrathin PbO layers grown on Pb films

Harris, E. P., Hauge, P. S., Kircher, C. J.

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 399 KB

english, 1979

5

Aging characteristics of Ga1−xAlxAs double-heterostructure lasers bonded with gold eutectic alloy solder

Fujiwara, K., Fujiwara, T., Hori, K., Takusagawa, M.

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 389 KB

english, 1979

6

The mechanism of optically induced degradation in InP/In1−xGaxAsyP1−y heterostructures

Mahajan, S., Johnston, W. D., Pollack, M. A., Nahory, R. E.

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 475 KB

english, 1979

7

The electronic structure of HgCl and HgBr

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 501 KB

english, 1979

8

Auger profile study of the influence of lattice mismatch on the LPE InGaAsP-InP heterojunction interface

Feng, M., Cook, L. W., Tashima, M. M., Stillman, G. E., Blattner, R. J.

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 494 KB

english, 1979

9

Quantitative measurements of fast ions from CO2 laser-produced plasmas

Joshi, C., Richardson, M. C., Enright, G. D.

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 455 KB

english, 1979

10

Facet protection of (AlGa)As lasers using SiO2 sputter deposition

Yuasa, Tonao, Endo, Kenji, Torikai, Toshitaka, Yonezu, Hiroo

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 463 KB

english, 1979

11

The effects of processing stresses on residual degradation in long-lived Ga1−xAlxAs lasers

Goodwin, A. R., Kirkby, P. A., Davies, I. G. A., Baulcomb, R. S.

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 430 KB

english, 1979

12

High-average-power 16-μm gasdynamic CO2 laser using a multipass cavity

Wexler, B. L., Waynant, R. W.

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 578 KB

english, 1979

13

Saturable absorption effects in the self-pulsing (AlGa)As junction laser

Paoli, Thomas L.

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 574 KB

english, 1979

14

Preparation of n-type semiconducting Ge20Bi10Se70 glass

Tohge, Noboru, Yamamoto, Yoshitaka, Minami, Tsutomu, Tanaka, Masami

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 416 KB

english, 1979

15

A near-infrared fiber Raman oscillator tunable from 1.07 to 1.32 μm

Lin, Chinlon, French, W. G.

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 469 KB

english, 1979

16

Low-current-threshold strip-buried-heterostructure lasers with self-aligned current injection stripes

Tsang, W. T., Logan, R. A., van der Ziel, J. P.

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 562 KB

english, 1979

17

Thin-film GaAs solar cells with grain-boundary edge passivation

Ghandhi, S. K., Borrego, J. M., Reep, D., Hsu, Y-S., Pande, K. P.

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 462 KB

english, 1979

18

Stimulated spin-flip Raman scattering in a Pb0.88Sn0.12Te single crystal

Yasuda, K., Shirafuji, J.

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 418 KB

english, 1979

19

Erratum: Cold-working Nb3Al in the bcc structure and then converting to the A-15 structure

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 224 KB

english, 1979

20

Arrays of superconducting tunnel junctions as low-noise 10-GHz mixers

Rudner, S., Claeson, T.

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 439 KB

english, 1979

21

Erratum: Observation of transverse and longitudinal modes in non-neutral electron clouds confined in a magnetic mirror

Eckhouse, Shimon, Fisher, Amnon, Rostoker, Norman

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 222 KB

english, 1979

22

A SAW/CCD accumulating correlator

Smythe, D. L., Ralston, R. W., Stern, E.

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 367 KB

english, 1979

23

Capacitance measurements on organic-semiconductor Schottky barriers—A new approach

Popovic, Zoran D.

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 368 KB

english, 1979

24

Laser irradiation of silicon containing misfit dislocations

Hofker, W. K., Oosthoek, D. P., Eggermont, G. E. J., Tamminga, Y., Stacy, W. T.

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 436 KB

english, 1979

25

High optical power density emission from a ’’window-stripe’’ AlGaAs double-heterostructure laser

Yonezu, H., Sakuma, I., Kamejima, T., Ueno, M., Iwamoto, K., Hino, I., Hayashi, I.

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 443 KB

english, 1979

26

Delay measurement of experimental 2.5-μm Josephson current injection logic (CIL)

Gheewala, T. R.

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 381 KB

english, 1979

27

Electrical characteristics of the plasma-grown native-oxide/GaAs interface

Mimura, T., Yokoyama, N., Fukuta, M.

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 400 KB

english, 1979

28

Diffusion of Cd acceptors in InP and a diffusion theory for III-V semiconductors

Tien, P. K., Miller, B. I.

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 495 KB

english, 1979

29

Infrared-microwave double resonance of NH3 using a tunable diode laser

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 379 KB

english, 1979

30

Electronic defect levels in self-implanted cw laser-annealed silicon

Johnson, N. M., Gold, R. B., Gibbons, J. F.

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 436 KB

english, 1979

31

Residual stacking-fault-type contrast in silicon after apparent unfaulting reactions

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 419 KB

english, 1979

32

Alkali-metal resonance-line lasers based on photodissociation

Ehrlich, D. J., Osgood, R. M.

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 496 KB

english, 1979

33

Electron trapping in neutron transmutation doped silicon

van Ruyven, L. J., Ammerlaan, C. A. J.

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 476 KB

english, 1979

34

The fabrication of Schottky-barrier solar cells by electroless nickel plating

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 478 KB

english, 1979

35

Measurements of refractive-index dispersion by optical waveguiding

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 466 KB

english, 1979

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