Volume 34; Issue 11

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Applied Physics Letters
Volume 34; Issue 11

Applied Physics Letters

Volume 34; Issue 11

1

Microbolometers for infrared detection

Hwang, Tien-Lai, Schwarz, S. E., Rutledge, D. B.

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 590 KB

english, 1979

2

Dynamics of Q-switched laser annealing

Auston, D. H., Golovchenko, J. A., Simons, A. L., Surko, C. M., Venkatesan, T. N. C.

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 503 KB

english, 1979

3

Magneto-optic current sensing with birefringent fibers

Rashleigh, S. C., Ulrich, R.

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 456 KB

english, 1979

4

GaAs-AlxGa1−xAs strip-buried-heterostructure lasers with lateral-evanescent-field distributed feedback

Tsang, W. T., Logan, R. A., Johnson, L. F.

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 568 KB

english, 1979

5

Temperature sensitivity of ion-implanted MOS capacitors

Topich, James A.

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 482 KB

english, 1979

6

Superstructures of submonolayer indium films on silicon (111)7 surfaces

Kawaji, M., Baba, S., Kinbara, A.

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 379 KB

english, 1979

7

Measurement of spatial distribution of long-wavelength radiation from GaAlAs injection lasers

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 481 KB

english, 1979

8

LaF3 insulators for MIS structures

Sher, A., Miller, W. E., Tsuo, Y. H., Moriarty, John A., Crouch, R. K., Seiber, B. A.

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 456 KB

english, 1979

9

Phenomenological theory of the acoustophotorefractive effect

Leavitt, Richard P.

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 477 KB

english, 1979

10

Lattice constants and band-gap variations of the pentenary semiconductor system Cu1−yAgyInS2(1−x)Se2x

Chapman, G. H., Shewchun, J., Loferski, J. J., Garside, B. K., Beaulieu, R.

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 494 KB

english, 1979

11

Optoacoustic Raman gain spectroscopy of liquids

Patel, C. K. N., Tam, A. C.

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 569 KB

english, 1979

12

Unidentified acceptors in silicon and germanium

Ohmer, M. C., Lang, J. E.

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 461 KB

english, 1979

13

Pulsed-laser annealing of ion-implanted polycrystalline silicon films

Wu, C. P., Magee, C. W.

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 449 KB

english, 1979

14

High-field dark currents in thin CVD silicon nitride with graded interfacial composition

Andrews, J. M., Jackson, B. G., Polito, W. J.

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 490 KB

english, 1979

15

Stepped I-V characteristics of MIS capacitors in the inversion polarity

Davidoff, S., Kashat, I., Klein, N.

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 475 KB

english, 1979

16

Correlation of electrolytic-etch and surface-photovoltage techniques for the detection of electrically active defects in silicon

Deines, J. L., Philbrick, J. W., Poponiak, M. R., Dove, D. B.

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 479 KB

english, 1979

17

Polarization-sensitive coherent anti-Stokes Raman spectroscopy

Oudar, Jean-Louis, Smith, Robert W., Shen, Y. R.

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 430 KB

english, 1979

18

Buried-grid fabrication by silicon liquid-phase epitaxy

Baliga, B. Jayant

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 353 KB

english, 1979

19

An MOS field-effect transistor fabricated on a molecular-beam epitaxial silicon layer

Katayama, Y., Shiraki, Y., Kobayashi, K. L. I., Komatsubara, K. F., Hashimoto, N.

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 343 KB

english, 1979

20

Characterization of light emission from amorphous chalcogenide switches

Walsh, P. J., Pooladdej, D., Thompson, M. J., Allison, J.

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 350 KB

english, 1979

21

Energy-resolved DLTS measurement of interface states in MIS structures

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 423 KB

english, 1979

22

Al/Al2O3/InP MIS structures

Favennec, P. N., Le Contellec, M., L’Haridon, H., Pelous, G. P., Richard, J.

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 314 KB

english, 1979

23

Sublimation of ionic crystals in the presence of an electrical field

Yacamán, M.José, Munir, Z. A., Ocaña, T., Hirth, J. P.

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 377 KB

english, 1979

24

655 mV open-circuit voltage, 17.6% efficient silicon MIS solar cells

Godfrey, R. B., Green, M. A.

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 480 KB

english, 1979

25

Brillouin backscatter dependence upon pulse amplitudes, timing, target material, and geometry

Ripin, B. H., McLean, E.A.

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 441 KB

english, 1979

26

Prediction of anelastic loss in piezoelectric solids: Effect of geometry

Lakes, Roderic S.

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 350 KB

english, 1979

27

Ion-implanted laser-annealed GaAs solar cells

Fan, John C. C., Chapman, Ralph L., Donnelly, Joseph P., Turner, George W., Bozler, Carl O.

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 429 KB

english, 1979

28

High critical currents in cold-powder-metallurgy-processed superconducting Cu-Nb-Sn composites

Flükiger, R., Foner, S., McNiff, E. J., Schwartz, B. B.

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 536 KB

english, 1979

29

Thin-film Mo-Si interaction

Schutz, R. J., Testardi, L. R.

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 351 KB

english, 1979

30

Increase in luminescence efficiency of AlxGa1−xAs grown by organometallic VPE

Stringfellow, G. B., Hom, G.

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 468 KB

english, 1979

31

Technique for profiling 1H with 2.5-MeV Van de Graaff accelerators

Doyle, B. L., Peercy, P. S.

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 450 KB

english, 1979

32

Directional coupler switch in molecular-beam epitaxy GaAs

Carenco, A., Menigaux, L., Alexandre, F., Abdalla, M., Brenac, A.

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 453 KB

english, 1979

33

Arsenic incorporation in native oxides of GaAs grown thermally under arsenic trioxide vapor

Schwartz, G. P., Griffiths, J. E., DiStefano, D., Gualtieri, G. J., Schwartz, B.

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 470 KB

english, 1979

34

Electroabsorption in GaInAsP

Kingston, R. H.

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 494 KB

english, 1979

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