Volume 35; Issue 1

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Applied Physics Letters
Volume 35; Issue 1

Applied Physics Letters

Volume 35; Issue 1

1

Crystallographic orientation of silicon on an amorphous substrate using an artificial surface‐relief grating and laser crystallization

Geis, M. W., Flanders, D. C., Smith, Henry I.

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 621 KB

english, 1979

2

Preparation and properties of CuInS2 thin films produced by exposing sputtered Cu-In films to an H2S atmosphere

Grindle, Steven P., Smith, Charles W., Mittleman, Steven D.

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 482 KB

english, 1979

3

Superconducting properties of in situ formed Cu-V3Ga composites

Bevk, J., Habbal, F., Lobb, C. J., Harbison, James P.

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 445 KB

english, 1979

4

Thermochemical coloration and annealing of spinel and magnesium oxide

White, G. S., Lee, K. H., Crawford, J. H.

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 459 KB

english, 1979

5

A new electron-beam pumped XeF laser at 486 nm

Ernst, W. E., Tittel, F. K.

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 406 KB

english, 1979

6

Low-noise parametric amplification at 35 GHz in a single Josephson tunnel junction

Mygind, J., Pedersen, N. F., Soerensen, O. H., Dueholm, B., Levinsen, M. T.

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 492 KB

english, 1979

7

A 490-nm XeF electric discharge laser

Fisher, C. H., Center, R. E., Mullaney, G. J., McDaniel, J. P.

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 499 KB

english, 1979

8

The use of SnTe as the source of donor impurities in GaAs grown by molecular beam epitaxy

Collins, Douglas M.

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 558 KB

english, 1979

9

A majority-carrier camel diode

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 478 KB

english, 1979

10

High-intensity subnanosecond transients from synchronously pumped submillimeter-wave lasers

Lemley, W., Nurmikko, A. V.

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 460 KB

english, 1979

11

On the scaling law of plasma temperature versus laser flux

Sinha, B. K., Gopi, N.

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 496 KB

english, 1979

12

Proton radiation effects on Cr-MIS single-crystal Si solar cells

Ferraglio, R., Anderson, W. A.

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 462 KB

english, 1979

13

A discharge pumped laser on the C→A transition of XeF

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 400 KB

english, 1979

14

Resistivity changes in laser-annealed polycrystalline silicon during thermal annealing

Shibata, Tadashi, Iizuka, Hisakazu, Kohyama, Susumu, Gibbons, J. F.

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 469 KB

english, 1979

15

Tungsten needles produced by decomposition of hexacarbonyltungsten

Okuyama, F., Shibata, T., Yasuda, N.

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 318 KB

english, 1979

16

Range-resolved measurements of atmospheric ozone using a differential-absorption CO2 laser radar

Asai, Kazuhiro, Itabe, Toshikazu, Igarashi, Takashi

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 369 KB

english, 1979

17

Background carrier concentration and electron mobility in LPE In1−xGaxAsyP1−y layers

Greene, P. D., Wheeler, S. A., Adams, A. R., El-Sabbahy, A. N., Ahmad, C. N.

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 437 KB

english, 1979

18

Phonon-assisted recombination in a multiple-quantum-well LPE InP-In1−xGaxP1−zAsz heterostructure laser

Rezek, E. A., Chin, R., Holonyak, N., Kirchoefer, S. W., Kolbas, R. M.

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 428 KB

english, 1979

19

Subharmonic energy gap structure in the Josephson radiation at 35 GHz from a superconducting thin-film microbridge

Hansen, J. Bindslev, Levinsen, M. T., Lindelof, P. E., Dueholm, B., Mygind, J., Pedersen, N. F., Soerensen, O. H.

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 424 KB

english, 1979

20

Resistivity measurement of thin semiconductor films on metallic substrates

Hogan, Steve, Wagner, Sigurd, Barnes, Frank S.

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 345 KB

english, 1979

21

Role of the III(1/2) -II(1/2) transition in rare-gas–halide kinetics

Julienne, P. S., Krauss, M.

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 425 KB

english, 1979

22

Stress in thermal SiO2 during growth

EerNisse, E. P.

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 386 KB

english, 1979

23

Study of surface crystallinity and stoichiometry of laser-annealed GaAs using time-resolved reflectivity and channeling

Venkatesan, T. N. C., Auston, D. H., Golovchenko, J. A., Surko, C. M.

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 424 KB

english, 1979

24

Junction formation with pure and doped polyacetylene

Ozaki, M., Peebles, D. L., Weinberger, B. R., Chiang, C. K., Gau, S. C., Heeger, A. J., MacDiarmid, A. G.

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 421 KB

english, 1979

25

Electron bombardment effect on the breakdown voltage of Zener diodes

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 415 KB

english, 1979

26

Microsecond operation of a general purpose pulsed proton gun

Humphries, S., Kuswa, G. W.

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 517 KB

english, 1979

27

Optimal cavity design for low-threshold-current-density operation of double-heterojunction diode lasers

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 524 KB

english, 1979

28

Planar guarded avalanche diodes in InP fabricated by ion implantation

Donnelly, J. P., Armiento, C. A., Diadiuk, V., Groves, S. H.

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 412 KB

english, 1979

29

Single Te films and Te trilayers for optical recording

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 430 KB

english, 1979

30

Kinetics of vacuum-ultraviolet continuum from a high-pressure He fast discharge

Gand, M., Bouchoule, A., Stevefelt, J.

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 429 KB

english, 1979

31

Semiconductor laser with integral light intensity detector

Scifres, D. R., Stutius, W.

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 492 KB

english, 1979

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