Volume 35; Issue 12

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Applied Physics Letters
Volume 35; Issue 12

Applied Physics Letters

Volume 35; Issue 12

1

Polarization effects on single‐mode optical fiber sensors

Sheem, S. K., Giallorenzi, T. G.

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 611 KB

english, 1979

2

Photoluminescence from hydrogenated ion-implanted crystalline silicon

Pankove, J. I., Wu, C. P.

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 525 KB

english, 1979

3

Observation of semiconductor-semimetal transition in InAs-GaSb superlattices

Chang, L. L., Kawai, N., Sai-Halasz, G. A., Ludeke, R., Esaki, L.

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 539 KB

english, 1979

4

Rates of dissociative attachment of electrons to excited H2 and D2

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 416 KB

english, 1979

5

Degradation of Ga1−xAlxAs visible diode lasers

Kajimura, T., Kuroda, T., Yamashita, S., Todokoro, H., Nakamura, M., Mizuishi, K., Umeda, J.

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 472 KB

english, 1979

6

Improving the radiative yield of GaAs by laser annealing

Rostworowski, J. A., Parsons, R. R., Hutcheon, D. G.

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 552 KB

english, 1979

7

The use of ZnO in transparent type MIS solar cells

Petrou, P., Singh, R., Brodie, D. E.

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 398 KB

english, 1979

8

Operating characteristics of a closed cycle flow rare gas halide laser

Miller, J. L., Dickie, J., Davin, J., Swingle, J., Kan, T.

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 491 KB

english, 1979

9

Absorption studies at 193 nm in e-beam excited xenon

Duzy, C., Boness, M. J. W.

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 430 KB

english, 1979

10

Erratum: Effect of pressure and pulse length on the isotopically selective photodissociation of freon CF2Cl2 under CO2 laser pulses

Nève de Mévergnies, M.

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 215 KB

english, 1979

11

Erratum: X-ray determination of strain and damage distributions in ion-implanted layers

Speriosu, V. S., Glass, H. L., Kobayashi, T.

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 214 KB

english, 1979

12

Stabilization of aging-induced self-pulsations and the elimination of an initial temporally saturable mode of degradation in (Al,Ga)As lasers by means of facet coatings

Nash, F. R., Hartman, R. L., Paoli, T. L., Dixon, R. W.

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 444 KB

english, 1979

13

Determination of the interface states in GaAs MOS diodes by deep-level transient spectroscopy

Yamasaki, Kimiyoshi, Sugano, Takuo

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 426 KB

english, 1979

14

A TEM00 far infrared laser with integrated pump laser

Dyrna, P., Tacke, M.

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 325 KB

english, 1979

15

Electron dissociative attachment rate constants for F2 and NF3 at 300 and 500 °K

Trainor, Daniel W., Jacob, J. H.

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 401 KB

english, 1979

16

Laser-induced recystallization and defects in ion-implanted hexagonal SiC

Makarov, V. V., Tuomi, T., Naukkarinen, K., Luomajärvi, M., Riihonen, M.

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 488 KB

english, 1979

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