Volume 35; Issue 3

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Applied Physics Letters
Volume 35; Issue 3

Applied Physics Letters

Volume 35; Issue 3

1

Spectrally selective surfaces of Ni-pigmented anodic Al2O3

Granqvist, C. G., Andersson, AÌ., Hunderi, O.

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 465 KB

english, 1979

2

InGaAsP heterostructure avalanche photodiodes with high avalanche gain

Nishida, Katsuhiko, Taguchi, Kenko, Matsumoto, Yoshishige

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 431 KB

english, 1979

3

Self-diffusion in intrinsic silicon

Kalinowski, Ludomir, Seguin, Remy

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 453 KB

english, 1979

4

Cellular structure and silicide formation in laser-irradiated metal-silicon systems

G. J. Van Gurp, G. E. J. Eggermont, Y. Tamminga, W. T. Stacy, J. R. M. Gijsbers

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 488 KB

english, 1979

5

Optical directional couplers with weighted coupling

Alferness, R. C.

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 498 KB

english, 1979

6

Effect of nonlinear index changes on degenerate four-wave mixing

Marburger, John H., Lam, Juan F.

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 470 KB

english, 1979

7

XeF ground-state dissociation and vibrational equilibration

Fulghum, S. F., Feld, M. S., Javan, A.

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 485 KB

english, 1979

8

Pulsed-electron-beam annealing of polycrystalline-silicon films

Kamins, T. I., Greenwald, A. C.

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 579 KB

english, 1979

9

Self-aligned structure InGaAsP/InP DH lasers

Nishi, H., Yano, M., Nishitani, Y., Akita, Y., Takusagawa, M.

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 478 KB

english, 1979

10

A geodesic optical waveguide lens fabricated by anisotropic etching

Naumaan, A., Boyd, J. T.

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 490 KB

english, 1979

11

Face dependence of the spin polarization of photoelectrons from NEA GaAs (100) and (110)

Pierce, D. T., Wang, G. C., Celotta, R. J.

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 524 KB

english, 1979

12

Transformation from Ohmic to offset behavior for the on state of an amorphous semiconductor threshold switch for interruptions greater than 12 ns

Vezzoli, Gary C.

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 507 KB

english, 1979

13

Carbon and oxygen role for thermally induced microdefect formation in silicon crystals

Kishino, Seigo^, Matsushita, Yoshiaki, Kanamori, Masaru

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 480 KB

english, 1979

14

Solid-state epitaxial growth of deposited Si films

von Allmen, M., Lau, S. S., Mayer, J. W., Tseng, W. F.

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 493 KB

english, 1979

15

Annealing of phosphorus-ion-implanted silicon using a CO2 laser

Miyao, M., Ohyu, K., Tokuyama, T.

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 479 KB

english, 1979

16

Relationships of electrical properties and melting threshold in laser-annealed ion-implanted silicon

Wang, K. L., Liu, Y. S., Burman, C.

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 506 KB

english, 1979

17

A new surface-acoustic-wave cut of quartz with orthogonal temperature-compensated propagation directions

O’Connell, Robert M.

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 385 KB

english, 1979

18

Carrier-concentration reduction in high-dose phosphorus-implanted silicon caused by wet-oxygen oxidation

Yagi, K., Oyu, K., Tamura, M., Tokuyama, T.

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 426 KB

english, 1979

19

Laser action at 3577 Å in proton-beam-pumped Ar-N2 mixtures

Wiley, L. G., Hammer, D. A., McFarlane, R. A.

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 541 KB

english, 1979

20

Nucleation-controlled thin-film interactions: Some silicides

Anderson, R., Baglin, J., Dempsey, J., Hammer, W., d’Heurle, F., Petersson, S.

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 398 KB

english, 1979

21

High-speed cutoff modulator using a Ti-diffused LiNbO3 channel waveguide

Neyer, A., Sohler, W.

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 446 KB

english, 1979

22

SAW dispersion and film-thickness measurement by acoustic microscopy

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 450 KB

english, 1979

23

Redistribution of Cr during annealing of 80Se-implanted GaAs

Evans, C. A., Deline, V. R., Sigmon, T. W., Lidow, A.

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 438 KB

english, 1979

24

Collective acceleration of carbon ions to 170 MeV

Destler, W. W., Hoeberling, R. F., Kim, H., Bostick, W. H.

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 355 KB

english, 1979

25

Fabrication of superconducting Nb3Sn-Cu composites

Verhoeven, J. D., Gibson, E. D., Owen, C. V., Ostenson, J. E., Finnemore, D. K.

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 432 KB

english, 1979

26

Helmholtz resonance cells for pulsed dye laser-excited high resolution optoacoustic spectroscopy

Shaw, Robert W.

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 405 KB

english, 1979

27

Spray-deposited high-efficiency SnO2/n-Si solar cells

Feng, Tom, Ghosh, Amal K., Fishman, Charles

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 412 KB

english, 1979

28

Observation of in situ annealing in hot ion-implantation of nitrogen into AlxGa1−xAs (x=0.53)

Makita, Yunosuke, Nojiri, Hidetoshi, Tsurushima, Toshio, Tanoue, Hisao, Shimada, Jun-ichi

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 422 KB

english, 1979

29

Efficiency enhancement in manganese-doped zinc silicate phosphor with AlPO4 substitution

Chang, I. F., Shafer, M. W.

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 415 KB

english, 1979

30

The formation of Ga1−xAlxAs layers on the surface of GaAs during continual dissolution into Ga-Al-As solutions

Small, M. B., Ghez, R., Potemski, R. M., Woodall, J. M.

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 334 KB

english, 1979

31

MIS solar cells with back surface fields

Tarr, N. G., Pulfrey, D. L., Iles, P. A.

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 475 KB

english, 1979

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