Volume 36; Issue 2

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Applied Physics Letters
Volume 36; Issue 2

Applied Physics Letters

Volume 36; Issue 2

1

Determination of oxygen concentration profiles in silicon crystals observed by scanning IR absorption using semiconductor laser

Ohsawa, A., Honda, K., Ohkawa, S., Ueda, R.

Journal:

Applied Physics Letters

Year:

1980

Language:

english

File:

PDF, 480 KB

english, 1980

2

Polycrystalline silicon films deposited in a glow discharge at temperatures below 250âÂ°C

Iqbal, Z., Webb, A. P., VeprÌek, S.

Journal:

Applied Physics Letters

Year:

1980

Language:

english

File:

PDF, 585 KB

english, 1980

3

Liquid crystal alignment on surfactant treated obliquely evaporated surfaces

Heffner, W. R., Berreman, D. W., Sammon, M., Meiboom, S.

Journal:

Applied Physics Letters

Year:

1980

Language:

english

File:

PDF, 393 KB

english, 1980

4

Very high quantum efficiency GaSb mesa photodetectors between 1.3 and 1.6 μm

Capasso, F., Panish, M. B., Sumski, S., Foy, P. W.

Journal:

Applied Physics Letters

Year:

1980

Language:

english

File:

PDF, 483 KB

english, 1980

5

Measurements of the rectifying barrier heights of various rhodium silicides with n-silicon

de Sousa Pires, J., d’Heurle, F., Norde, H., Petersson, S., Tove, P. A.

Journal:

Applied Physics Letters

Year:

1980

Language:

english

File:

PDF, 443 KB

english, 1980

6

Tunable vacuum ultraviolet laser action by argon excimers

Wrobel, W.-G., Röhr, H., Steuer, K.-H.

Journal:

Applied Physics Letters

Year:

1980

Language:

english

File:

PDF, 450 KB

english, 1980

7

Leakage current in InGaAsP avalanche photodiodes

Yeats, R., Chiao, S. H.

Journal:

Applied Physics Letters

Year:

1980

Language:

english

File:

PDF, 496 KB

english, 1980

8

Nuclear-pumped cw lasing of the 3He-Ne system

Carter, B. D., Rowe, M. J., Schneider, R. T.

Journal:

Applied Physics Letters

Year:

1980

Language:

english

File:

PDF, 479 KB

english, 1980

9

Surfaces for radiative cooling: Silicon monoxide films on aluminum

Granqvist, C. G., Hjortsberg, A.

Journal:

Applied Physics Letters

Year:

1980

Language:

english

File:

PDF, 504 KB

english, 1980

10

Transverse mode stabilized AlGaAs/GaAs plano-convex waveguide laser made by a single-step liquid phase epitaxy

Ide, Y., Furuse, T., Sakuma, I., Nishida, K.

Journal:

Applied Physics Letters

Year:

1980

Language:

english

File:

PDF, 485 KB

english, 1980

11

Photoacoustic measurements of ion-implanted and laser-annealed GaAs

McFarlane, R. A., Hess, L. D.

Journal:

Applied Physics Letters

Year:

1980

Language:

english

File:

PDF, 397 KB

english, 1980

12

Erratum: Temperature dependence of the current-voltage characteristics of silicon MIS solar cells

Shewchun, J., Singh, R., Burk, D., Scholz, F.

Journal:

Applied Physics Letters

Year:

1980

Language:

english

File:

PDF, 294 KB

english, 1980

13

Erratum: XeF ground-state dissociation and vibrational equilibration

Fulghum, S. F., Feld, M. S., Javan, A.

Journal:

Applied Physics Letters

Year:

1980

Language:

english

File:

PDF, 217 KB

english, 1980

14

Theoretical study of formation rates of rare-gas halide trimers

Shui, Ven H., Duzy, Carolyn

Journal:

Applied Physics Letters

Year:

1980

Language:

english

File:

PDF, 319 KB

english, 1980

15

Photodissociation of HgCl

Julienne, P. S., Konowalow, D. D., Krauss, M., Rosenkrantz, M. E., Stevens, W. J.

Journal:

Applied Physics Letters

Year:

1980

Language:

english

File:

PDF, 381 KB

english, 1980

16

Pulsed CO2 laser interaction with a metal surface at oblique incidence

McKay, J. A., Schriempf, J. T., Cronburg, T. L., Eninger, J. E., Woodroffe, J. A.

Journal:

Applied Physics Letters

Year:

1980

Language:

english

File:

PDF, 449 KB

english, 1980

17

The effect of substrate temperature on the current threshold of GaAs-AlxGa1−xAs double-heterostructure lasers grown by molecular beam epitaxy

Tsang, W. T., Reinhart, F. K., Ditzenberger, J. A.

Journal:

Applied Physics Letters

Year:

1980

Language:

english

File:

PDF, 423 KB

english, 1980

18

Formation process of oxide precipitates in Czochralski-grown silicon crystals

Journal:

Applied Physics Letters

Year:

1980

Language:

english

File:

PDF, 450 KB

english, 1980

19

Electron density measurement by deflection of a far-infrared beam

Keren, H., Hirshfield, J. L.

Journal:

Applied Physics Letters

Year:

1980

Language:

english

File:

PDF, 407 KB

english, 1980

20

Three-dimensional heat flow in the photoacoustic effect

McDonald, F. Alan

Journal:

Applied Physics Letters

Year:

1980

Language:

english

File:

PDF, 416 KB

english, 1980

21

Thermo-optical spectroscopy: Detection by the ’’mirage effect’’

Boccara, A. C., Fournier, D., Badoz, J.

Journal:

Applied Physics Letters

Year:

1980

Language:

english

File:

PDF, 413 KB

english, 1980

22

Solid-phase growth of large aligned grains during scanned laser crystallization of amorphous Ge films on fused silica

Fan, John C. C., Zeiger, H. J., Gale, Ronald P., Chapman, Ralph L.

Journal:

Applied Physics Letters

Year:

1980

Language:

english

File:

PDF, 533 KB

english, 1980

23

A 500-MHz GaAs charge-coupled device

Deyhimy, I., Eden, R. C., Anderson, R. J., Harris, J. S.

Journal:

Applied Physics Letters

Year:

1980

Language:

english

File:

PDF, 484 KB

english, 1980

24

An integrated photoconductive detector and waveguide structure

Gammel, J. C., Ballantyne, J. M.

Journal:

Applied Physics Letters

Year:

1980

Language:

english

File:

PDF, 486 KB

english, 1980

25

Elastic stiffness and thermal expansion coefficient of BN films

Retajczyk, T. F., Sinha, A. K.

Journal:

Applied Physics Letters

Year:

1980

Language:

english

File:

PDF, 477 KB

english, 1980

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