Volume 36; Issue 3

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Applied Physics Letters
Volume 36; Issue 3

Applied Physics Letters

Volume 36; Issue 3

1

cw high-power single-mode operation of constricted double-heterojunction AlGaAs lasers with a large optical cavity

Journal:

Applied Physics Letters

Year:

1980

Language:

english

File:

PDF, 462 KB

english, 1980

2

Impact ionization rates for electrons and holes in Ga0.47In0.53As

Journal:

Applied Physics Letters

Year:

1980

Language:

english

File:

PDF, 455 KB

english, 1980

3

Reduction of oxides on silicon by heating in a gallium molecular beam at 800 °Ca)

S. Wright, H. Kroemer

Journal:

Applied Physics Letters

Year:

1980

Language:

english

File:

PDF, 349 KB

english, 1980

4

Phase transformations in laser-irradiated Au-Si thin films

von Allmen, M., Lau, S. S., Mäenpää, M., Tsaur, B. Y.

Journal:

Applied Physics Letters

Year:

1980

Language:

english

File:

PDF, 505 KB

english, 1980

5

High specific power long-pulse supersonic flow XeCl laser at 308 nm

Fontaine, B., Forestier, B.

Journal:

Applied Physics Letters

Year:

1980

Language:

english

File:

PDF, 492 KB

english, 1980

6

Oscillator and oscillator-amplifier experiments with an HgBr2/HgBr dissociation laser

Schimitschek, E. J., Celto, J. E.

Journal:

Applied Physics Letters

Year:

1980

Language:

english

File:

PDF, 466 KB

english, 1980

7

Application of laser annealing techniques to increase channel mobility in silicon on sapphire transistors

Yaron, Giora, Hess, LaVerne D.

Journal:

Applied Physics Letters

Year:

1980

Language:

english

File:

PDF, 477 KB

english, 1980

8

Plasma sheath driven targets

Brownell, John H., Freeman, Bruce L.

Journal:

Applied Physics Letters

Year:

1980

Language:

english

File:

PDF, 374 KB

english, 1980

9

Cohesion of solids under laser irradiation

Wautelet, M., Laude, L. D.

Journal:

Applied Physics Letters

Year:

1980

Language:

english

File:

PDF, 501 KB

english, 1980

10

SiO2 antireflection coating effect on cw laser annealing of ion implanted Si

Okabayashi, H., Yoshida, M., Ishida, K., Yamane, T.

Journal:

Applied Physics Letters

Year:

1980

Language:

english

File:

PDF, 416 KB

english, 1980

11

Parametric difference frequency generation in a three-dimensional LiNbO3 optical waveguide

Journal:

Applied Physics Letters

Year:

1980

Language:

english

File:

PDF, 388 KB

english, 1980

12

Kinetic processes in the electrically excited mercuric-bromide dissociation laser

Nighan, William L.

Journal:

Applied Physics Letters

Year:

1980

Language:

english

File:

PDF, 439 KB

english, 1980

13

Monolithic integration of a GaAlAs injection laser with a Schottky-gate field effect transistor

Fukuzawa, T., Nakamura, M., Hirao, M., Kuroda, T., Umeda, J.

Journal:

Applied Physics Letters

Year:

1980

Language:

english

File:

PDF, 391 KB

english, 1980

14

Characterization of surface oxides by Raman spectroscopy

Farrow, R. L., Mattern, P. L., Nagelberg, A. S.

Journal:

Applied Physics Letters

Year:

1980

Language:

english

File:

PDF, 443 KB

english, 1980

15

Chromium concentrations, depth distributions, and diffusion coefficient in bulk and epitaxial GaAs and in Si

Wilson, R. G., Vasudev, P. K., Jamba, D. M., Evans, C. A., Deline, V. R.

Journal:

Applied Physics Letters

Year:

1980

Language:

english

File:

PDF, 426 KB

english, 1980

16

Effects of bending on the superconducting critical current density of monofilamentary Nb3Sn wires

Kaiho, K., Luhman, T. S., Suenaga, M., Sampson, W. B.

Journal:

Applied Physics Letters

Year:

1980

Language:

english

File:

PDF, 414 KB

english, 1980

17

Surface hardness and abrasive wear resistance of nitrogen-implanted steels

Bolster, R. N., Singer, I. L.

Journal:

Applied Physics Letters

Year:

1980

Language:

english

File:

PDF, 350 KB

english, 1980

18

Zn diffusion into GaAs by a two-temperature method

Hasegawa, Osamu, Namazu, Ryosuke

Journal:

Applied Physics Letters

Year:

1980

Language:

english

File:

PDF, 397 KB

english, 1980

19

A master oscillator power amplifier experiment for the determination of the gain coefficient and saturation intensity for an electron-beam-excited KrF amplifier

Patterson, E. L., Rice, J. K., Tisone, G. C.

Journal:

Applied Physics Letters

Year:

1980

Language:

english

File:

PDF, 410 KB

english, 1980

20

Lifetime improvement in Czochralski-grown silicon wafers by the use of a two-step annealing

Yamamoto, K., Kishino, S., Matsushita, Y., Iizuka, T.

Journal:

Applied Physics Letters

Year:

1980

Language:

english

File:

PDF, 431 KB

english, 1980

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