Volume 38; Issue 1

Applied Physics Letters

Volume 38; Issue 1
3

Semimetallic InAs-GaSb superlattices to the heterojunction limit

Year:
1981
Language:
english
File:
PDF, 409 KB
english, 1981
4

Picosecond photoconductivity in radiation-damaged silicon-on-sapphire films

Year:
1981
Language:
english
File:
PDF, 581 KB
english, 1981
6

Polycrystalline Zn3P2 Schottky barrier solar cells

Year:
1981
Language:
english
File:
PDF, 472 KB
english, 1981
7

Multiphonon relaxation rates from delayed laser emission in Nd-YAG crystals

Year:
1981
Language:
english
File:
PDF, 447 KB
english, 1981
8

Backscattering method for the study of blistering with energy-distributed He particles

Year:
1981
Language:
english
File:
PDF, 367 KB
english, 1981
9

Optically induced bistable states in metal/tunnel-oxide/semiconductor (MTOS) junctions

Year:
1981
Language:
english
File:
PDF, 590 KB
english, 1981
10

Characteristics of the metal insulator semiconductor structure:AlN/Si

Year:
1981
Language:
english
File:
PDF, 378 KB
english, 1981
12

The mechanism of Schottky-barrier formation in polyacetylene

Year:
1981
Language:
english
File:
PDF, 419 KB
english, 1981
13

Suppression of optical beam filamentation in plasmas and saturable dielectrics

Year:
1981
Language:
english
File:
PDF, 392 KB
english, 1981
14

Dielectric and hydrodynamic instabilities in certain classes of discotic mesophases

Year:
1981
Language:
english
File:
PDF, 374 KB
english, 1981
17

Electron energy distribution in photolytically pumped lasers

Year:
1981
Language:
english
File:
PDF, 428 KB
english, 1981
18

Enhanced plasma oxidation at low temperature using a thin solid electrolyte film

Year:
1981
Language:
english
File:
PDF, 433 KB
english, 1981
19

Thermal stabilization of thin-film GaAs solar cells with grain-boundary–edge passivation

Year:
1981
Language:
english
File:
PDF, 412 KB
english, 1981
20

Raman spectra from heat-treated semi-insulating GaAs

Year:
1981
Language:
english
File:
PDF, 457 KB
english, 1981
21

Fast photoconductive detector using p-In0.53Ga0.47As with response to 1.7 μm

Year:
1981
Language:
english
File:
PDF, 454 KB
english, 1981