Volume 38; Issue 10

Applied Physics Letters

Volume 38; Issue 10
1

Saturation velocity determination for In0.53Ga0.47As field-effect transistors

Bandy, S.
Journal:
Applied Physics Letters
Year:
1981
Language:
english
File:
PDF, 508 KB
english, 1981
3

Optical time domain reflectometer for single-mode fiber at selectable wavelengths

Kawasaki, B. S.
Journal:
Applied Physics Letters
Year:
1981
Language:
english
File:
PDF, 451 KB
english, 1981
4

Self-annealing of ion-implanted silicon: First experimental results

Cembali, G. F.
Journal:
Applied Physics Letters
Year:
1981
Language:
english
File:
PDF, 416 KB
english, 1981
5

Return-current electron streams in high-intensity laser target interaction

Jaanimagi, P. A.
Journal:
Applied Physics Letters
Year:
1981
Language:
english
File:
PDF, 494 KB
english, 1981
6

Synchronously pumped mode-locked CdS platelet laser

Roxlo, C. B.
Journal:
Applied Physics Letters
Year:
1981
Language:
english
File:
PDF, 489 KB
english, 1981
7

Optical bistability using a magneto-optic modulator

Umegaki, Shinsuke
Journal:
Applied Physics Letters
Year:
1981
Language:
english
File:
PDF, 451 KB
english, 1981
9

Ion implantation in Si using a high-density CO2 laser-produced boron plasma flux

Silfvast, W. T.
Journal:
Applied Physics Letters
Year:
1981
Language:
english
File:
PDF, 503 KB
english, 1981
10

Electrical conductivity of Al-implanted films of ZnS

Thomas, C. B.
Journal:
Applied Physics Letters
Year:
1981
Language:
english
File:
PDF, 455 KB
english, 1981
11

Highly stable, photosensitive evaporated amorphous silicon films

Tong, B. Y.
Journal:
Applied Physics Letters
Year:
1981
Language:
english
File:
PDF, 423 KB
english, 1981
12

Vibration quenching of HgBr(X 2Σ+1/2)

Helvajian, H.
Journal:
Applied Physics Letters
Year:
1981
Language:
english
File:
PDF, 493 KB
english, 1981
13

Strain-rate dependence of the effective viscosity under steady-wave shock compression

Grady, D. E.
Journal:
Applied Physics Letters
Year:
1981
Language:
english
File:
PDF, 388 KB
english, 1981
14

Penning ionization spectroscopy using the optogalvanic effect

Ben-Amar, A.
Journal:
Applied Physics Letters
Year:
1981
Language:
english
File:
PDF, 439 KB
english, 1981
15

Heteroepitaxy of vacuum-evaporated Ge films on single-crystal Si

Tsaur, B.-Y.
Journal:
Applied Physics Letters
Year:
1981
Language:
english
File:
PDF, 504 KB
english, 1981
16

Millimeter-wave generation at 110 GHz by laser modulation of a HgCdTe photodiode

Taur, Y.
Journal:
Applied Physics Letters
Year:
1981
Language:
english
File:
PDF, 449 KB
english, 1981
17

Absolute two-photo fluorescence with low-power cw lasers

Catalano, Ida M.
Journal:
Applied Physics Letters
Year:
1981
Language:
english
File:
PDF, 483 KB
english, 1981
18

Orientation and velocity dependence of solute trapping in Si

Baeri, P.
Journal:
Applied Physics Letters
Year:
1981
Language:
english
File:
PDF, 484 KB
english, 1981
20

Dopant profile analysis of boron in solar grade poly- and single- crystalline silicon

Jain, G. C.
Journal:
Applied Physics Letters
Year:
1981
Language:
english
File:
PDF, 495 KB
english, 1981
21

Source and elimination of oval defects on GaAs films grown by molecular beam epitaxy

Chai, Young G.
Journal:
Applied Physics Letters
Year:
1981
Language:
english
File:
PDF, 418 KB
english, 1981
22

A low-temperature fabrication process of polycrystalline silicon-silicon p+-n junction diode

Wu, Chii-ming M.
Journal:
Applied Physics Letters
Year:
1981
Language:
english
File:
PDF, 332 KB
english, 1981
23

Disorder of an AlAs-GaAs superlattice by impurity diffusion

Laidig, W. D.
Journal:
Applied Physics Letters
Year:
1981
Language:
english
File:
PDF, 451 KB
english, 1981
24

Amplified spontaneous-emission quantum beats in flash-pumped H20 vapor

Lawandy, Nabil M.
Journal:
Applied Physics Letters
Year:
1981
Language:
english
File:
PDF, 350 KB
english, 1981
25

Shallow p+ layer in GaAs formed by zinc ion implantation

Kasahara, Jiro
Journal:
Applied Physics Letters
Year:
1981
Language:
english
File:
PDF, 428 KB
english, 1981
26

Calorimetric absorption spectroscopy of nonradiative recombination processes in GaP

Bimberg, D.
Journal:
Applied Physics Letters
Year:
1981
Language:
english
File:
PDF, 433 KB
english, 1981
27

Intrinsic and deep-level photoacoustic spectroscopy of GaAs (Cr) and of other bulk semiconductors

Eaves, L.
Journal:
Applied Physics Letters
Year:
1981
Language:
english
File:
PDF, 422 KB
english, 1981
28

Interferometric measurements with laser FM sidebands

Bjorklund, G. C.
Journal:
Applied Physics Letters
Year:
1981
Language:
english
File:
PDF, 418 KB
english, 1981
30

Amorphous silicon-silicon nitride thin-film transistors

Powell, M. J.
Journal:
Applied Physics Letters
Year:
1981
Language:
english
File:
PDF, 487 KB
english, 1981