Volume 39; Issue 10

Applied Physics Letters

Volume 39; Issue 10
4

The effect of electroabsorption on the determination of ionization coefficients

Bulman, G. E.
Journal:
Applied Physics Letters
Year:
1981
Language:
english
File:
PDF, 487 KB
english, 1981
5

Oxide optimization at the p-Si/aqueous electrolyte interface

Lewerenz, H. J.
Journal:
Applied Physics Letters
Year:
1981
Language:
english
File:
PDF, 482 KB
english, 1981
6

Measurements of the dynamics of imploding wire arrays

Benjamin, R. F.
Journal:
Applied Physics Letters
Year:
1981
Language:
english
File:
PDF, 467 KB
english, 1981
7

Fine structure of voltage levels in the I-V characteristics of the rf SQUID’s

Ben-Jacob, E.
Journal:
Applied Physics Letters
Year:
1981
Language:
english
File:
PDF, 480 KB
english, 1981
8

Dynamical x-ray reflection at terraces in epitaxial layers

Chang, Shih-Lin
Journal:
Applied Physics Letters
Year:
1981
Language:
english
File:
PDF, 419 KB
english, 1981
9

Electrical characteristics of Al contact to NiSi using thin W layer as a barrier

Bartur, M.
Journal:
Applied Physics Letters
Year:
1981
Language:
english
File:
PDF, 509 KB
english, 1981
11

Liquid phase epitaxial growth of cadmium-doped InGaAsP/InP double heterostructure lasers

Tamari, N.
Journal:
Applied Physics Letters
Year:
1981
Language:
english
File:
PDF, 379 KB
english, 1981
12

Bubble states in a contiguous disk magnetic bubble device

Konishi, Susumu
Journal:
Applied Physics Letters
Year:
1981
Language:
english
File:
PDF, 423 KB
english, 1981
14

Magnetic properties of amorphous and crystallized (Fe0.82B0.18)0.9Tb0.05La0.05

Koon, N. C.
Journal:
Applied Physics Letters
Year:
1981
Language:
english
File:
PDF, 396 KB
english, 1981
16

Chaos and noise rise in Josephson junctions

Pedersen, N. F
Journal:
Applied Physics Letters
Year:
1981
Language:
english
File:
PDF, 439 KB
english, 1981
17

Thin-film gallium arsenide homojunction solar cells

Chu, Shirley S.
Journal:
Applied Physics Letters
Year:
1981
Language:
english
File:
PDF, 392 KB
english, 1981
18

Electrical properties of laser chemically doped silicon

Deutsch, T. F.
Journal:
Applied Physics Letters
Year:
1981
Language:
english
File:
PDF, 426 KB
english, 1981
19

Longitudinal mode control in GaAs lasers using a three-mirror active-passive cavity

Garmire, E.
Journal:
Applied Physics Letters
Year:
1981
Language:
english
File:
PDF, 439 KB
english, 1981
20

Pair transitions in Zn3P2

Briones, Fernando
Journal:
Applied Physics Letters
Year:
1981
Language:
english
File:
PDF, 396 KB
english, 1981
21

The effect of growth conditions on Si incorporation in molecular beam epitaxial GaAs

Chai, Y. G.
Journal:
Applied Physics Letters
Year:
1981
Language:
english
File:
PDF, 509 KB
english, 1981
22

The rate of cw laser induced solid phase epitaxial regrowth of amorphous silicon

Lietoila, A.
Journal:
Applied Physics Letters
Year:
1981
Language:
english
File:
PDF, 414 KB
english, 1981
23

Line narrowing and enhanced efficiency of an HgBr laser by injection locking

Shay, T.
Journal:
Applied Physics Letters
Year:
1981
Language:
english
File:
PDF, 421 KB
english, 1981