Volume 39; Issue 12

Applied Physics Letters

Volume 39; Issue 12
1

Threshold behavior of Si films melted with a cw yttrium aluminum garnet laser

Lemons, R. A., Bosch, M. A.
Journal:
Applied Physics Letters
Year:
1981
Language:
english
File:
PDF, 504 KB
english, 1981
2

Room-temperature electron diffusion lengths in liquid phase epitaxial InGaAsP and InGaAs

Tashima, M. M.
Journal:
Applied Physics Letters
Year:
1981
Language:
english
File:
PDF, 453 KB
english, 1981
5

Laser microreaction for deposition of doped silicon films

Ehrlich, D. J.
Journal:
Applied Physics Letters
Year:
1981
Language:
english
File:
PDF, 434 KB
english, 1981
6

Optical properties and water absorption of anodically grown native oxides on InP

Studna, A. A.
Journal:
Applied Physics Letters
Year:
1981
Language:
english
File:
PDF, 405 KB
english, 1981
7

Solar cells made by laser-induced diffusion directly from phosphine gas

Turner, G. B.
Journal:
Applied Physics Letters
Year:
1981
Language:
english
File:
PDF, 460 KB
english, 1981
8

Exceptional second-order nonlinear optical susceptibilities of quinoid systems

Lalama, S. J.
Journal:
Applied Physics Letters
Year:
1981
Language:
english
File:
PDF, 472 KB
english, 1981
10

Evaluation of secondary ion mass spectrometry profile distortions using Rutherford backscattering

Clegg, J. B.
Journal:
Applied Physics Letters
Year:
1981
Language:
english
File:
PDF, 472 KB
english, 1981
11

Time resolved luminescence of photoexcited p-type gallium arsenide by population mixing

Rosen, D.
Journal:
Applied Physics Letters
Year:
1981
Language:
english
File:
PDF, 396 KB
english, 1981
12

Electronic transport and microstructure in molybdenum silicide thin films

Weinmeister, Roger E.
Journal:
Applied Physics Letters
Year:
1981
Language:
english
File:
PDF, 431 KB
english, 1981
13

Trapped vortex memory cells

Uehara, Shingo
Journal:
Applied Physics Letters
Year:
1981
Language:
english
File:
PDF, 354 KB
english, 1981
14

p-n junction formation in n-AlGaAs by beryllium ion implantation

Comas, J.
Journal:
Applied Physics Letters
Year:
1981
Language:
english
File:
PDF, 369 KB
english, 1981
15

Infrared technique for study of thin-film interfaces

Gungor, A.
Journal:
Applied Physics Letters
Year:
1981
Language:
english
File:
PDF, 330 KB
english, 1981
16

Laser induced irreversible absorption changes in alkali halides at 10.6 μm

Wu, S.-T.
Journal:
Applied Physics Letters
Year:
1981
Language:
english
File:
PDF, 437 KB
english, 1981
17

Cyclotron resonance linewidth in selectively doped GaAs-AlxGa1−xAs heterojunctions

Voisin, P.
Journal:
Applied Physics Letters
Year:
1981
Language:
english
File:
PDF, 404 KB
english, 1981
18

Scaling characteristics of ultrasmall Josephson junctions

Rogovin, D.
Journal:
Applied Physics Letters
Year:
1981
Language:
english
File:
PDF, 387 KB
english, 1981
19

Donor-acceptor pair luminescence in Si(In,Li): Observation of the In-X center

Ziemelis, U. O.
Journal:
Applied Physics Letters
Year:
1981
Language:
english
File:
PDF, 424 KB
english, 1981
20

Redissolution of precipitated oxygen in Czochralski-grown silicon wafers

Shimura, Fumio
Journal:
Applied Physics Letters
Year:
1981
Language:
english
File:
PDF, 435 KB
english, 1981
21

X-ray photoelectron spectroscopy studies of Ag photodoping in Se-Ge amorphous films

Zembutsu, S.
Journal:
Applied Physics Letters
Year:
1981
Language:
english
File:
PDF, 474 KB
english, 1981