Volume 40; Issue 10

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Applied Physics Letters
Volume 40; Issue 10

Applied Physics Letters

Volume 40; Issue 10

1

The BâX transition in 200Hgâ79Br

Tellinghuisen, Joel

Journal:

Applied Physics Letters

Year:

1982

Language:

english

File:

PDF, 524 KB

english, 1982

2

Optically pumped ring laser oscillation in the 6Li2 molecule

Rajaei-Rizi, A.

Journal:

Applied Physics Letters

Year:

1982

Language:

english

File:

PDF, 488 KB

english, 1982

3

Output power and temperature dependence of the linewidth of single- frequency cw (GaAl)As diode lasers

Journal:

Applied Physics Letters

Year:

1982

Language:

english

File:

PDF, 461 KB

english, 1982

4

Tangential magnetoresistance of two-dimensional electron gas at a selectively doped n-GaAlAs/GaAs heterojunction interface grown by molecular beam epitaxy

Journal:

Applied Physics Letters

Year:

1982

Language:

english

File:

PDF, 405 KB

english, 1982

5

Infrared absorption of the 78-meV acceptor in GaAs

Journal:

Applied Physics Letters

Year:

1982

Language:

english

File:

PDF, 600 KB

english, 1982

6

Pyroelectric detection of magnetic resonance

Journal:

Applied Physics Letters

Year:

1982

Language:

english

File:

PDF, 424 KB

english, 1982

7

Influence of AlxGa1−xAs buffer layers on the performance of modulation-doped field-effect transistors

Drummond, T. J.

Journal:

Applied Physics Letters

Year:

1982

Language:

english

File:

PDF, 479 KB

english, 1982

8

Erratum: Deuterium in He-implanted Fe: Trapping and the surface permeation barrier [Appl. Phys. Lett. 39, 450 (1981)]

Journal:

Applied Physics Letters

Year:

1982

Language:

english

File:

PDF, 279 KB

english, 1982

9

Continuous electrowetting effect

Journal:

Applied Physics Letters

Year:

1982

Language:

english

File:

PDF, 479 KB

english, 1982

10

Two-dimensional electron gas in a In0.53Ga0.47As-InP heterojunction grown by metalorganic chemical vapor deposition

Journal:

Applied Physics Letters

Year:

1982

Language:

english

File:

PDF, 423 KB

english, 1982

11

Erratum: High-output power InGaAsP (λ = 1.3 μm) strip-buried heterostructure lasers [Appl. Phys. Lett. 36, 358 (1980)]

Journal:

Applied Physics Letters

Year:

1982

Language:

english

File:

PDF, 215 KB

english, 1982

12

1/f frequency fluctuations of a quartz oscillator

Noguchi, Yasuaki

Journal:

Applied Physics Letters

Year:

1982

Language:

english

File:

PDF, 307 KB

english, 1982

13

Erratum: Induced junction monolithic zinc oxide-on-silicon storage correlator [Appl. Phys. Lett. 40, 71 (1982)]

Journal:

Applied Physics Letters

Year:

1982

Language:

english

File:

PDF, 213 KB

english, 1982

14

Raman measurements of stress in silicon-on-sapphire device structures

Brueck, S. R. J.

Journal:

Applied Physics Letters

Year:

1982

Language:

english

File:

PDF, 512 KB

english, 1982

15

A novel p+nn+ GaAs/Al0.30Ga0.70As/GaAs double heterojunction diode for high-temperature electronic applications

Zipperian, T. E.

Journal:

Applied Physics Letters

Year:

1982

Language:

english

File:

PDF, 532 KB

english, 1982

16

Experimental study of a superconducting vortex-memory device

Journal:

Applied Physics Letters

Year:

1982

Language:

english

File:

PDF, 436 KB

english, 1982

17

Deuterium passivation of grain-boundary dangling bonds in silicon thin films

Journal:

Applied Physics Letters

Year:

1982

Language:

english

File:

PDF, 425 KB

english, 1982

18

Detailed characteristics of an intense proton beam from an ‘‘applied-Bϑ’’ magnetically insulated ion diode

Journal:

Applied Physics Letters

Year:

1982

Language:

english

File:

PDF, 411 KB

english, 1982

19

Tunable electro-optic waveguide TE〈–〉TM converter/wavelength filter

Alferness, R. C.

Journal:

Applied Physics Letters

Year:

1982

Language:

english

File:

PDF, 349 KB

english, 1982

20

Amplifying continuous wave phase conjugate mirror with strontium barium niobate

Fischer, Baruch

Journal:

Applied Physics Letters

Year:

1982

Language:

english

File:

PDF, 445 KB

english, 1982

21

Epitaxy of CuI on Cu(111)

Journal:

Applied Physics Letters

Year:

1982

Language:

english

File:

PDF, 461 KB

english, 1982

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