Volume 40; Issue 6

Applied Physics Letters

Volume 40; Issue 6
1

Laser crystallization of Si films on glass

Lemons, R. A., Bosch, M. A., Dayem, A. H., Grogan, J. K., Mankiewich, P. M.
Journal:
Applied Physics Letters
Year:
1982
Language:
english
File:
PDF, 536 KB
english, 1982
4

Preparation and properties of TiO2 varistors

Yan, M. F.
Journal:
Applied Physics Letters
Year:
1982
Language:
english
File:
PDF, 355 KB
english, 1982
5

Mechanism of ion dechanneling in compound semiconductor superlattices

Barrett, John H.
Journal:
Applied Physics Letters
Year:
1982
Language:
english
File:
PDF, 465 KB
english, 1982
6

Ion implantation of Be in In0.53Ga0.47As

Tabatabaie-Alavi, K.
Journal:
Applied Physics Letters
Year:
1982
Language:
english
File:
PDF, 560 KB
english, 1982
7

Coherent oscillation by self-induced gratings in the photorefractive crystal BaTiO3

White, Jeffrey O.
Journal:
Applied Physics Letters
Year:
1982
Language:
english
File:
PDF, 450 KB
english, 1982
9

Gas-puff Z pinches with D2 and D2-Ar mixtures

Bailey, J.
Journal:
Applied Physics Letters
Year:
1982
Language:
english
File:
PDF, 381 KB
english, 1982
12

Magnetic field assisted alignment of nematic liquid crystal on a polymeric surface

Koshida, Nobuyoshi
Journal:
Applied Physics Letters
Year:
1982
Language:
english
File:
PDF, 407 KB
english, 1982
13

Voltage and frequency dependence of simulated rf plasma annealing in metal-SiO2-Si structures

Chin, M. R.
Journal:
Applied Physics Letters
Year:
1982
Language:
english
File:
PDF, 492 KB
english, 1982
14

Electron trapping in SiO2—An injection mode dependent phenomenon

Eitan, B.
Journal:
Applied Physics Letters
Year:
1982
Language:
english
File:
PDF, 488 KB
english, 1982
15

Demonstration of a new oscillator based on real-space transfer in heterojunctions

Coleman, Paul D.
Journal:
Applied Physics Letters
Year:
1982
Language:
english
File:
PDF, 467 KB
english, 1982
17

Origin and elimination of defects in SiO2 thermally grown on Czochralski silicon substrate

Itsumi, Manabu
Journal:
Applied Physics Letters
Year:
1982
Language:
english
File:
PDF, 496 KB
english, 1982
18

Electron tunneling through GaAs grain boundaries

Seager, C. H.
Journal:
Applied Physics Letters
Year:
1982
Language:
english
File:
PDF, 505 KB
english, 1982
19

Bragg condition in absorbing x-ray multilayers

Rosenbluth, Alan E.
Journal:
Applied Physics Letters
Year:
1982
Language:
english
File:
PDF, 400 KB
english, 1982
20

Hot-carrier relaxation in p-In0.53Ga0.47As

Shah, Jagdeep
Journal:
Applied Physics Letters
Year:
1982
Language:
english
File:
PDF, 432 KB
english, 1982
21

High field temperature dependent electron drift velocities in GaAs

Windhorn, T. H.
Journal:
Applied Physics Letters
Year:
1982
Language:
english
File:
PDF, 435 KB
english, 1982
22

Multiplication noise in planar InP/InGaAsP heterostructure avalanche photodiodes

Shirai, Tatsunori
Journal:
Applied Physics Letters
Year:
1982
Language:
english
File:
PDF, 322 KB
english, 1982
23

GaAs/AlxGa1−xAs depletion stop phototransistor grown by molecular beam epitaxy

Chen, C. Y.
Journal:
Applied Physics Letters
Year:
1982
Language:
english
File:
PDF, 416 KB
english, 1982
24

Depth profiling of metal oxides using Raman spectroscopy with ion bombardment

Hamilton, J. C.
Journal:
Applied Physics Letters
Year:
1982
Language:
english
File:
PDF, 419 KB
english, 1982
26

Dose dependence of epitaxial regrowth of Se-implanted GaAs

Bhattacharya, R. S.
Journal:
Applied Physics Letters
Year:
1982
Language:
english
File:
PDF, 433 KB
english, 1982
27

Radiometric levitation of micron sized spheres

Lewittes, M.
Journal:
Applied Physics Letters
Year:
1982
Language:
english
File:
PDF, 431 KB
english, 1982
29

Fermi level pinning at metal-CdTe interfaces

Williams, R. H.
Journal:
Applied Physics Letters
Year:
1982
Language:
english
File:
PDF, 367 KB
english, 1982
30

Low noise normally on and normally off two-dimensional electron gas field-effect transistors

Laviron, M.
Journal:
Applied Physics Letters
Year:
1982
Language:
english
File:
PDF, 476 KB
english, 1982