Volume 40; Issue 7

Applied Physics Letters

Volume 40; Issue 7
2

Electrical excitation of an XeCl laser using magnetic pulse compression

Year:
1982
Language:
english
File:
PDF, 444 KB
english, 1982
3

Observation of cyclotron resonance in the photoconductivity of two-dimensional electrons

Year:
1982
Language:
english
File:
PDF, 431 KB
english, 1982
4

Effective barrier heights of mixed phase contacts: Size effects

Year:
1982
Language:
english
File:
PDF, 542 KB
english, 1982
5

Mechanism of asymmetric longitudinal mode competition in InGaAsP/InP lasers

Year:
1982
Language:
english
File:
PDF, 546 KB
english, 1982
6

Calculation of carrier and lattice temperatures induced in Si by picosecond laser pulses

Year:
1982
Language:
english
File:
PDF, 409 KB
english, 1982
7

Rippled-field magnetron

Year:
1982
Language:
english
File:
PDF, 438 KB
english, 1982
8

X-ray rocking curve study of Si-implanted GaAs, Si, and Ge

Year:
1982
Language:
english
File:
PDF, 473 KB
english, 1982
9

Oxygen precipitation effects on Si n+-p junction leakage behavior

Year:
1982
Language:
english
File:
PDF, 480 KB
english, 1982
10

Ion implantation of Si in Be-implanted In0.53Ga0.47As

Year:
1982
Language:
english
File:
PDF, 397 KB
english, 1982
11

Single-mode integrated optical 1×N star coupler

Year:
1982
Language:
english
File:
PDF, 402 KB
english, 1982
12

Epitaxial NiSi2 formation by pulsed ion beam annealing

Year:
1982
Language:
english
File:
PDF, 486 KB
english, 1982
13

Efficient H2 Raman conversion of long-pulse XeF laser radiation into the blue-green region

Year:
1982
Language:
english
File:
PDF, 508 KB
english, 1982
14

High performance all-sputter deposited Cu2S/CdS junctions

Year:
1982
Language:
english
File:
PDF, 477 KB
english, 1982
15

Optically induced catastrophic degradation in InGaAsP/InP layers

Year:
1982
Language:
english
File:
PDF, 608 KB
english, 1982
19

A novel technique for GaInAsP/InP buried heterostructure laser fabrication

Year:
1982
Language:
english
File:
PDF, 482 KB
english, 1982
20

Oxygen gettering by graphite baffles during organometallic vapor phase epitaxial AlGaAs growth

Year:
1982
Language:
english
File:
PDF, 529 KB
english, 1982
21

Optoelectronic picosecond sampling system utilizing a modulated barrier photodiode

Year:
1982
Language:
english
File:
PDF, 500 KB
english, 1982
22

Semiconductor internal-reflection-interference laser

Year:
1982
Language:
english
File:
PDF, 383 KB
english, 1982
23

Observation of linewidth broadening in (GaAl)As diode lasers due to electron number fluctuations

Year:
1982
Language:
english
File:
PDF, 402 KB
english, 1982
24

Amorphous silicon photovoltaic detectors for guided-wave optics

Year:
1982
Language:
english
File:
PDF, 319 KB
english, 1982
26

4-bit 828-megasample/s electro-optic guided-wave analog-to-digital converter

Year:
1982
Language:
english
File:
PDF, 471 KB
english, 1982
27

Spectroscopy of donors in high purity GaAs grown by molecular beam epitaxy

Year:
1982
Language:
english
File:
PDF, 429 KB
english, 1982
28

Modification of the germanium oxidation process by aluminum adatoms

Year:
1982
Language:
english
File:
PDF, 401 KB
english, 1982
29

Laser induced phase locking of hydrogen plasma striations

Year:
1982
Language:
english
File:
PDF, 326 KB
english, 1982
30

X-ray interference by division of wave front—A new x-ray interferometer

Year:
1982
Language:
english
File:
PDF, 347 KB
english, 1982
31

Electrochemical diffusion of arsenic in silicon through thermal thin SiO2 films

Year:
1982
Language:
english
File:
PDF, 397 KB
english, 1982