Volume 40; Issue 9

Applied Physics Letters

Volume 40; Issue 9
3

Surface ripples on silicon and gallium arsenide under picosecond laser illumination

Fauchet, P. M.
Journal:
Applied Physics Letters
Year:
1982
Language:
english
File:
PDF, 540 KB
english, 1982
4

Diffusion of arsenic in polycrystalline silicon

Swaminathan, B.
Journal:
Applied Physics Letters
Year:
1982
Language:
english
File:
PDF, 617 KB
english, 1982
5

Compression of femtosecond optical pulses

Shank, C. V.
Journal:
Applied Physics Letters
Year:
1982
Language:
english
File:
PDF, 235 KB
english, 1982
6

Femtosecond interferometry for nonlinear optics

Halbout, J-M.
Journal:
Applied Physics Letters
Year:
1982
Language:
english
File:
PDF, 473 KB
english, 1982
7

Diffused epitaxial GaAlAs-GaAs heterojunction bipolar transistor for high-frequency operation

Ankri, D.
Journal:
Applied Physics Letters
Year:
1982
Language:
english
File:
PDF, 497 KB
english, 1982
8

Strain of laser annealed silicon surfaces

Nemanich, R. J.
Journal:
Applied Physics Letters
Year:
1982
Language:
english
File:
PDF, 496 KB
english, 1982
9

Narrow 87Rb hyperfine-structure resonances in an evacuated wall-coated cell

Robinson, H. G.
Journal:
Applied Physics Letters
Year:
1982
Language:
english
File:
PDF, 479 KB
english, 1982
10

Raman spectra from Ga1−xInxAs epitaxial layers grown on GaAs and InP substrates

Kakimoto, K.
Journal:
Applied Physics Letters
Year:
1982
Language:
english
File:
PDF, 493 KB
english, 1982
11

Observation of flux trapping threshold in narrow superconducting thin films

Washington, M. A.
Journal:
Applied Physics Letters
Year:
1982
Language:
english
File:
PDF, 436 KB
english, 1982
12

Low noise GaAs metal-semiconductor field-effect transistor made by ion implantation

Feng, M.
Journal:
Applied Physics Letters
Year:
1982
Language:
english
File:
PDF, 471 KB
english, 1982
13

Absorption measurements at high pressure on AlAs-AlxGa1−xAs-GaAs superlattices

Kirchoefer, S. W.
Journal:
Applied Physics Letters
Year:
1982
Language:
english
File:
PDF, 580 KB
english, 1982
14

Transient annealing of selenium-implanted gallium arsenide using a graphite strip heater

Chapman, R. L.
Journal:
Applied Physics Letters
Year:
1982
Language:
english
File:
PDF, 504 KB
english, 1982
15

A comparison of ablative acceleration measurements

Raven, A.
Journal:
Applied Physics Letters
Year:
1982
Language:
english
File:
PDF, 490 KB
english, 1982
16

Ar+ laser induced chemical vapor deposition of Si from SiH4

Bäuerle, D.
Journal:
Applied Physics Letters
Year:
1982
Language:
english
File:
PDF, 444 KB
english, 1982
17

A novel normally-off camel diode gate GaAs field-effect transistor

Drummond, T. J.
Journal:
Applied Physics Letters
Year:
1982
Language:
english
File:
PDF, 446 KB
english, 1982
19

Transmission of CO2 laser power by single-crystal CsBr fibers

Mimura, Y.
Journal:
Applied Physics Letters
Year:
1982
Language:
english
File:
PDF, 426 KB
english, 1982
20

Effect of strain on the critical parameters of V2(Hf, Zr) Laves phase composite superconductors

Wada, H.
Journal:
Applied Physics Letters
Year:
1982
Language:
english
File:
PDF, 431 KB
english, 1982
21

Detection of CF2 radicals in a plasma etching reactor by laser-induced fluorescence spectroscopy

Hargis, P. J.
Journal:
Applied Physics Letters
Year:
1982
Language:
english
File:
PDF, 398 KB
english, 1982
22

Interface-state generation during avalanche injection of electrons from Si into SiO2

Sunaga, Toshio
Journal:
Applied Physics Letters
Year:
1982
Language:
english
File:
PDF, 364 KB
english, 1982
23

A picosecond transient digitizer based on nonlinear integrated optics

Normandin, R.
Journal:
Applied Physics Letters
Year:
1982
Language:
english
File:
PDF, 415 KB
english, 1982
26

Fluxon motion in long overlap and in-line Josephson junctions

Levring, O. A.
Journal:
Applied Physics Letters
Year:
1982
Language:
english
File:
PDF, 332 KB
english, 1982
27

Low-temperature release of ion-implanted helium from nickel

Poker, D. B.
Journal:
Applied Physics Letters
Year:
1982
Language:
english
File:
PDF, 454 KB
english, 1982
28

Mode selection and intensity enhancement of x rays in crystals

Chang, Shih-Lin
Journal:
Applied Physics Letters
Year:
1982
Language:
english
File:
PDF, 413 KB
english, 1982
29

Electric properties of unipolar GaAs structures with ultrathin triangular barriers

Gossard, A. C.
Journal:
Applied Physics Letters
Year:
1982
Language:
english
File:
PDF, 336 KB
english, 1982
31

A theory of longitudinal modes in semiconductor lasers

Lau, Kam Y.
Journal:
Applied Physics Letters
Year:
1982
Language:
english
File:
PDF, 395 KB
english, 1982
32

Energy absorption during pulsed-laser annealing

Peercy, P. S.
Journal:
Applied Physics Letters
Year:
1982
Language:
english
File:
PDF, 425 KB
english, 1982