Volume 41; Issue 10

Applied Physics Letters

Volume 41; Issue 10
1

Nonlinear optics of long range surface plasmons

Stegeman, G. I.
Journal:
Applied Physics Letters
Year:
1982
Language:
english
File:
PDF, 431 KB
english, 1982
5

Particle size distribution of Ni microprecipitates in LaNi5 used for hydrogen storage

Cohen, R. L.
Journal:
Applied Physics Letters
Year:
1982
Language:
english
File:
PDF, 413 KB
english, 1982
6

Epitaxial growth of Fe on GaAs by metalorganic chemical vapor deposition in ultrahigh vacuum

Kaplan, R.
Journal:
Applied Physics Letters
Year:
1982
Language:
english
File:
PDF, 495 KB
english, 1982
9

Shear piezoelectricity in ethylene dichloride solution of poly-γ-methyl-L-glutamate

Fukada, Eiichi
Journal:
Applied Physics Letters
Year:
1982
Language:
english
File:
PDF, 419 KB
english, 1982
10

Remote temperature measurement using an acoustic probe

Husson, D.
Journal:
Applied Physics Letters
Year:
1982
Language:
english
File:
PDF, 447 KB
english, 1982
14

Electron irradiation induced deep levels in p-InP

Sibille, A.
Journal:
Applied Physics Letters
Year:
1982
Language:
english
File:
PDF, 423 KB
english, 1982
15

Meaning of the photovoltaic band gap for amorphous semiconductors

Yablonovitch, E.
Journal:
Applied Physics Letters
Year:
1982
Language:
english
File:
PDF, 404 KB
english, 1982
18

Subsurface-structure determination using photothermal laser-beam deflection

Wetsel, Grover C.
Journal:
Applied Physics Letters
Year:
1982
Language:
english
File:
PDF, 423 KB
english, 1982
20

Sub-50-nm lithography in amorphous Se-Ge inorganic resist by electron beam exposure

Singh, B.
Journal:
Applied Physics Letters
Year:
1982
Language:
english
File:
PDF, 442 KB
english, 1982
21

High-temperature resistivity of Cr-doped epitaxial GaP

Fritz, I. J.
Journal:
Applied Physics Letters
Year:
1982
Language:
english
File:
PDF, 421 KB
english, 1982
22

Self-annealed ion implanted solar cells

Gabilli, E.
Journal:
Applied Physics Letters
Year:
1982
Language:
english
File:
PDF, 338 KB
english, 1982
23

Depth distributions and range parameters for He implanted in Si and GaAs

Wilson, R. G.
Journal:
Applied Physics Letters
Year:
1982
Language:
english
File:
PDF, 389 KB
english, 1982
24

Observation of an electronic plasma in picosecond laser annealing of silicon

von der Linde, D.
Journal:
Applied Physics Letters
Year:
1982
Language:
english
File:
PDF, 430 KB
english, 1982
26

One-dimensional isentropic compression measurements of multiply loaded polymethylmethacrylate

Rosenberg, Z.
Journal:
Applied Physics Letters
Year:
1982
Language:
english
File:
PDF, 379 KB
english, 1982
27

Band-gap enhanced carrier heating in InGaAsP/InP double heterostructure light-emitting diodes

Wada, Osamu
Journal:
Applied Physics Letters
Year:
1982
Language:
english
File:
PDF, 417 KB
english, 1982
28

Semihydrodynamic model for ion separation in a fast pinch

Barak, G.
Journal:
Applied Physics Letters
Year:
1982
Language:
english
File:
PDF, 403 KB
english, 1982
29

Noninvasive analysis of InP surfaces using Hg-InP Schottky barrier diodes

Pressman, L. D.
Journal:
Applied Physics Letters
Year:
1982
Language:
english
File:
PDF, 430 KB
english, 1982
30

Study of the electronic structure of amorphous silicon using reverse-recovery techniques

Silver, Marvin
Journal:
Applied Physics Letters
Year:
1982
Language:
english
File:
PDF, 432 KB
english, 1982
31

Effect of strain on the critical current and critical field of B1 structure NbN superconductors

Ekin, J. W.
Journal:
Applied Physics Letters
Year:
1982
Language:
english
File:
PDF, 379 KB
english, 1982
32

Bipolar transistor action in ion implanted diamond

Prins, J. F.
Journal:
Applied Physics Letters
Year:
1982
Language:
english
File:
PDF, 427 KB
english, 1982