Volume 41; Issue 11

Applied Physics Letters

Volume 41; Issue 11
1

Thin-film CaF2 inorganic electron resist and optical-read storage medium

Harrison, T. R.
Journal:
Applied Physics Letters
Year:
1982
Language:
english
File:
PDF, 497 KB
english, 1982
2

Temperature dependence of silicon Raman lines

Tsu, Raphael
Journal:
Applied Physics Letters
Year:
1982
Language:
english
File:
PDF, 534 KB
english, 1982
3

Picosecond, tunable ArF∗ excimer laser source

H. Egger
Journal:
Applied Physics Letters
Year:
1982
Language:
english
File:
PDF, 469 KB
english, 1982
4

Pseudo-optical absorption spectra in HgCl2 and HgBr2 from 4 to 14 eV

Spence, David
Journal:
Applied Physics Letters
Year:
1982
Language:
english
File:
PDF, 446 KB
english, 1982
5

Far-infrared surface plasmon coupling with overcoated gratings

Seymour, R. J.
Journal:
Applied Physics Letters
Year:
1982
Language:
english
File:
PDF, 456 KB
english, 1982
6

Growth of InGaAsP by molecular beam epitaxy

Holah, G. D.
Journal:
Applied Physics Letters
Year:
1982
Language:
english
File:
PDF, 487 KB
english, 1982
8

Trapping parameters of dangling bonds in hydrogenated amorphous silicon

Street, R. A.
Journal:
Applied Physics Letters
Year:
1982
Language:
english
File:
PDF, 477 KB
english, 1982
9

Transient photoacoustic monitoring of pulsed laser drilling

Yeack, C. E.
Journal:
Applied Physics Letters
Year:
1982
Language:
english
File:
PDF, 390 KB
english, 1982
11

High quantum efficiency InGaAsP/InP lasers

Tamari, N.
Journal:
Applied Physics Letters
Year:
1982
Language:
english
File:
PDF, 451 KB
english, 1982
12

Charge transient spectroscopy

Farmer, J. W.
Journal:
Applied Physics Letters
Year:
1982
Language:
english
File:
PDF, 482 KB
english, 1982
13

Irradiation-induced phase transformation in type 304 stainless steel

Hayashi, N.
Journal:
Applied Physics Letters
Year:
1982
Language:
english
File:
PDF, 421 KB
english, 1982
14

Heteroepitaxial growth of Ge on 〈111〉 Si by vacuum evaporation

Garozzo, M.
Journal:
Applied Physics Letters
Year:
1982
Language:
english
File:
PDF, 476 KB
english, 1982
17

Lateral zone growth and characterization of device quality silicon-on-insulator wafers

Lam, H. W.
Journal:
Applied Physics Letters
Year:
1982
Language:
english
File:
PDF, 430 KB
english, 1982
18

Continuous wave high-power, high-temperature semiconductor laser phase-locked arrays

Scifres, D. R.
Journal:
Applied Physics Letters
Year:
1982
Language:
english
File:
PDF, 413 KB
english, 1982
19

Field induced tunneling in Hg1−xCdxTe photodiodes

Anderson, W. W.
Journal:
Applied Physics Letters
Year:
1982
Language:
english
File:
PDF, 404 KB
english, 1982
20

Anomalous diffusion behavior of Mg in GaAs

Small, M. B.
Journal:
Applied Physics Letters
Year:
1982
Language:
english
File:
PDF, 445 KB
english, 1982
21

Photoluminescence of H2S in a rare-gas matrix

Scott, W.
Journal:
Applied Physics Letters
Year:
1982
Language:
english
File:
PDF, 334 KB
english, 1982
22

Low-temperature refractory metal film deposition

Solanki, R.
Journal:
Applied Physics Letters
Year:
1982
Language:
english
File:
PDF, 412 KB
english, 1982
23

High resolution photoacoustic microscopy on a surface acoustic wave device

Veith, G.
Journal:
Applied Physics Letters
Year:
1982
Language:
english
File:
PDF, 351 KB
english, 1982
24

Lattice incorporation of n-type dopants in GaAs

Rai, A. K.
Journal:
Applied Physics Letters
Year:
1982
Language:
english
File:
PDF, 445 KB
english, 1982
25

Theory of optical mixing by mobile carriers in superlattices

Bloss, W. L.
Journal:
Applied Physics Letters
Year:
1982
Language:
english
File:
PDF, 392 KB
english, 1982
26

Influence of hot carriers on the temperature dependence of threshold in 1.3-μm InGaAsP lasers

Etienne, B.
Journal:
Applied Physics Letters
Year:
1982
Language:
english
File:
PDF, 382 KB
english, 1982
27

Operating efficiencies in pulsed carbon dioxide lasers

Smith, A. L. S.
Journal:
Applied Physics Letters
Year:
1982
Language:
english
File:
PDF, 409 KB
english, 1982
28

High-field electron transport in InxGa1−xAsyP1−y (λg =1.2 μm)

Windhorn, T. H.
Journal:
Applied Physics Letters
Year:
1982
Language:
english
File:
PDF, 410 KB
english, 1982
30

Passivation of the dominant deep level (EL2) in GaAs by hydrogen

Lagowski, J.
Journal:
Applied Physics Letters
Year:
1982
Language:
english
File:
PDF, 503 KB
english, 1982
31

Evidence of the role of boron in undoped GaAs grown by liquid encapsulated Czochralski

Ta, L. B.
Journal:
Applied Physics Letters
Year:
1982
Language:
english
File:
PDF, 521 KB
english, 1982