Volume 41; Issue 3

Applied Physics Letters

Volume 41; Issue 3
2

Melting model and Raman scattering during pulsed laser annealing of ion-implanted silicon

Year:
1982
Language:
english
File:
PDF, 564 KB
english, 1982
3

Picosecond electro-optic sampling system

Year:
1982
Language:
english
File:
PDF, 414 KB
english, 1982
4

Are interface states consistent with Schottky barrier measurements?

Year:
1982
Language:
english
File:
PDF, 507 KB
english, 1982
5

Laser-induced periodic surface damage and radiation remnants

Year:
1982
Language:
english
File:
PDF, 561 KB
english, 1982
6

Defects and impurities in thermal oxides on silicon

Year:
1982
Language:
english
File:
PDF, 525 KB
english, 1982
7

Atomic displacements in metals due to low-energy light ion implantation

Year:
1982
Language:
english
File:
PDF, 414 KB
english, 1982
8

Absorption in the triatomic excimer, Xe2Cl

Year:
1982
Language:
english
File:
PDF, 508 KB
english, 1982
10

Measurement of lateral variation of hole diffusion lengths in GaAs

Year:
1982
Language:
english
File:
PDF, 495 KB
english, 1982
13

Palladium-surface acoustic wave interaction for hydrogen detection

Year:
1982
Language:
english
File:
PDF, 398 KB
english, 1982
15

Thermal-gradient-induced optical deflection in TiO2 crystals

Year:
1982
Language:
english
File:
PDF, 500 KB
english, 1982
16

Comparison of guided wave approaches to optical bistability

Year:
1982
Language:
english
File:
PDF, 475 KB
english, 1982
17

Self-injected neodymium-yttrium aluminum garnet laser with an unstable cavity

Year:
1982
Language:
english
File:
PDF, 334 KB
english, 1982
18

Manifestations of melt-carry-over in InP and InGaAsP layers grown by liquid phase epitaxy

Year:
1982
Language:
english
File:
PDF, 518 KB
english, 1982
19

Amplification of 70-fs optical pulses to gigawatt powers

Year:
1982
Language:
english
File:
PDF, 420 KB
english, 1982
20

Preparation of x-ray lithography masks using a tungsten reactive ion etching process

Year:
1982
Language:
english
File:
PDF, 331 KB
english, 1982
21

Iron nitride and carbonitride phases in a nitrogen implanted carbon steel

Year:
1982
Language:
english
File:
PDF, 423 KB
english, 1982
22

Superconductor-insulator-superconductor reflection parametric amplifier

Year:
1982
Language:
english
File:
PDF, 384 KB
english, 1982
23

Submicrometer-linewidth doping and relief definition in silicon by laser- controlled diffusion

Year:
1982
Language:
english
File:
PDF, 454 KB
english, 1982
24

Synchrotron x-ray topographic observation of defect evolution at the Si- Si3N4 interface

Year:
1982
Language:
english
File:
PDF, 478 KB
english, 1982
25

CdxHg1−xTe n-type layers grown by molecular beam epitaxy

Year:
1982
Language:
english
File:
PDF, 409 KB
english, 1982
27

Large area silicon sheet for solar cells

Year:
1982
Language:
english
File:
PDF, 387 KB
english, 1982
28

X-center formation by neutron irradiation of Ga-doped float-zone silicon

Year:
1982
Language:
english
File:
PDF, 445 KB
english, 1982
30

Photoelectronic effects in amorphous silicon based alloys

Year:
1982
Language:
english
File:
PDF, 410 KB
english, 1982
31

New lead alloy tunnel junction for quasiparticle mixer and other applications

Year:
1982
Language:
english
File:
PDF, 388 KB
english, 1982
33

In0.53Ga0.47As n-channel native oxide inversion mode field-effect transistor

Year:
1982
Language:
english
File:
PDF, 485 KB
english, 1982
34

Room-temperature excitonic optical bistability in a GaAs-GaAlAs superlattice étalon

Year:
1982
Language:
english
File:
PDF, 419 KB
english, 1982