Volume 41; Issue 4

Applied Physics Letters

Volume 41; Issue 4
1

Natural lithography

Deckman, H. W.
Journal:
Applied Physics Letters
Year:
1982
Language:
english
File:
PDF, 572 KB
english, 1982
2

Broadband triboluminescence in silica core fiber optic waveguides

Smiel, A. J.
Journal:
Applied Physics Letters
Year:
1982
Language:
english
File:
PDF, 517 KB
english, 1982
3

Combined microcrystal and amorphous silicon cells

Fang, P. H.
Journal:
Applied Physics Letters
Year:
1982
Language:
english
File:
PDF, 407 KB
english, 1982
4

Lamellar solidification of laser melted Co-Si films

Bösch, M. A.
Journal:
Applied Physics Letters
Year:
1982
Language:
english
File:
PDF, 434 KB
english, 1982
5

Measurement of third order nonlinear susceptibilities by surface plasmons

Chen, Y. J.
Journal:
Applied Physics Letters
Year:
1982
Language:
english
File:
PDF, 487 KB
english, 1982
7

Interface chemistry and electrical properties of tungsten Schottky-barrier contacts to GaAs

Waldrop, J. R.
Journal:
Applied Physics Letters
Year:
1982
Language:
english
File:
PDF, 516 KB
english, 1982
8

Schottky diode mixer for visible laser light and microwave harmonics up to 0.43 THz

Daniel, H.-U.
Journal:
Applied Physics Letters
Year:
1982
Language:
english
File:
PDF, 513 KB
english, 1982
10

Use of selective annealing for growing very large grain silicon on insulator films

Colinge, J. P.
Journal:
Applied Physics Letters
Year:
1982
Language:
english
File:
PDF, 436 KB
english, 1982
11

Thermal diffusivity of optical fibers measured by photoacoustics

Chardon, Dominique
Journal:
Applied Physics Letters
Year:
1982
Language:
english
File:
PDF, 402 KB
english, 1982
12

Resistance probe for energetic particle dosimetry with applications for plasma edge studies

Wampler, W. R.
Journal:
Applied Physics Letters
Year:
1982
Language:
english
File:
PDF, 519 KB
english, 1982
13

High energy AlxGa1−xAs (0≤x≤0.1) quantum-well heterostructure laser operation

Camras, M. D.
Journal:
Applied Physics Letters
Year:
1982
Language:
english
File:
PDF, 402 KB
english, 1982
14

Offset channel insulated gate field-effect transistors

Chen, C. Y.
Journal:
Applied Physics Letters
Year:
1982
Language:
english
File:
PDF, 430 KB
english, 1982
16

Extrinsic layer at AlxGa1−xAs-GaAs interfaces

Miller, R. C.
Journal:
Applied Physics Letters
Year:
1982
Language:
english
File:
PDF, 446 KB
english, 1982
17

Steady state model of an illuminated liquid-junction solar cell

Pinson, Wm. E.
Journal:
Applied Physics Letters
Year:
1982
Language:
english
File:
PDF, 449 KB
english, 1982
19

Large amplitude wave packets of ionization waves

Ohe, Kazuyuki
Journal:
Applied Physics Letters
Year:
1982
Language:
english
File:
PDF, 336 KB
english, 1982
20

Internal loss of InGaAsP/InP buried crescent (λ = 1.3 μm) laser

Higuchi, Hideyo
Journal:
Applied Physics Letters
Year:
1982
Language:
english
File:
PDF, 339 KB
english, 1982
21

Fabry–Perot photothermal trace detection

Campillo, A. J.
Journal:
Applied Physics Letters
Year:
1982
Language:
english
File:
PDF, 423 KB
english, 1982
23

Fault-free silicon at the silicon/sapphire interface

Ponce, Fernando A.
Journal:
Applied Physics Letters
Year:
1982
Language:
english
File:
PDF, 401 KB
english, 1982
24

Barrier height of Au on n-GaAs1−xSbx diodes

Subramanian, S.
Journal:
Applied Physics Letters
Year:
1982
Language:
english
File:
PDF, 500 KB
english, 1982