Volume 41; Issue 5

Applied Physics Letters

Volume 41; Issue 5
2

Percolation-type behavior in black chrome selective solar films

Year:
1982
Language:
english
File:
PDF, 534 KB
english, 1982
3

Properties of a GaxIn1−x As-GaAs isotype heterojunction diode

Year:
1982
Language:
english
File:
PDF, 450 KB
english, 1982
5

New heterojunction InGaAsP/InP laser with high-temperature stability (T0 = 180 K)

Year:
1982
Language:
english
File:
PDF, 483 KB
english, 1982
6

Threshold and memory switching in polycrystalline silicon

Year:
1982
Language:
english
File:
PDF, 432 KB
english, 1982
7

Properties of TiN obtained by N+2 implantation on Ti-coated Si wafers

Year:
1982
Language:
english
File:
PDF, 526 KB
english, 1982
8

Flash x radiography of laser-accelerated targets

Year:
1982
Language:
english
File:
PDF, 535 KB
english, 1982
11

High-power Cerenkov maser oscillator

Year:
1982
Language:
english
File:
PDF, 430 KB
english, 1982
13

Pulsed x-ray annealing of ion-implanted silicon

Year:
1982
Language:
english
File:
PDF, 469 KB
english, 1982
14

Spatial light modulation using electroabsorption in a GaAs charge-coupled device

Year:
1982
Language:
english
File:
PDF, 445 KB
english, 1982
15

Contactless measurement of Schottky barrier heights using secondary electrons

Year:
1982
Language:
english
File:
PDF, 416 KB
english, 1982
16

High quality InP grown by molecular beam epitaxy

Year:
1982
Language:
english
File:
PDF, 440 KB
english, 1982
17

Optimization of dc SQUID linear amplifiers and the quantum noise limit

Year:
1982
Language:
english
File:
PDF, 394 KB
english, 1982
18

Infrared laser-induced desorption of H2O and hydrocarbons from optical surfaces

Year:
1982
Language:
english
File:
PDF, 413 KB
english, 1982
19

Electron paramagnetic resonance study of electric gun induced reactions in the solid state

Year:
1982
Language:
english
File:
PDF, 270 KB
english, 1982
20

High-gain air breathing electric discharge CO2 laser

Year:
1982
Language:
english
File:
PDF, 345 KB
english, 1982
21

Nanosecond modulation at 10 μm by coherent Stark switching

Year:
1982
Language:
english
File:
PDF, 443 KB
english, 1982
22

Low temperature gettering of Cu, Ag, and Au across a wafer of Si by Al

Year:
1982
Language:
english
File:
PDF, 398 KB
english, 1982
23

Amorphous-silicon/silicon-oxynitride field-effect transistors

Year:
1982
Language:
english
File:
PDF, 416 KB
english, 1982
24

Self-heated thermocouples for far-infrared detection

Year:
1982
Language:
english
File:
PDF, 415 KB
english, 1982
25

Artificial tunnel barriers produced by cryogenically deposited Al2O3

Year:
1982
Language:
english
File:
PDF, 431 KB
english, 1982
26

New type of thin-film electroluminescent device having a multilayer structure

Year:
1982
Language:
english
File:
PDF, 430 KB
english, 1982
28

High-speed ultraviolet and x-ray-sensitive InP photoconductive detectors

Year:
1982
Language:
english
File:
PDF, 414 KB
english, 1982