Volume 41; Issue 7

Applied Physics Letters

Volume 41; Issue 7
1

Optical absorption coefficient of silicon at 1.152 μ at elevated temperatures

Year:
1982
Language:
english
File:
PDF, 532 KB
english, 1982
2

Lateral diffusion of Ni and Si through Ni2Si in Ni/Si couples

Year:
1982
Language:
english
File:
PDF, 593 KB
english, 1982
3

Toward quantum well wires: Fabrication and optical properties

Year:
1982
Language:
english
File:
PDF, 537 KB
english, 1982
4

Passive stabilization scheme for fiber interferometers using (3×3) fiber directional couplers

Year:
1982
Language:
english
File:
PDF, 240 KB
english, 1982
5

Frequency stabilization of a diode laser by use of the optogalvanic effect

Year:
1982
Language:
english
File:
PDF, 370 KB
english, 1982
6

Theory of resonant scattering in semiconductors due to impurity central-cell potentials

Year:
1982
Language:
english
File:
PDF, 435 KB
english, 1982
7

Proton exchange for high-index waveguides in LiNbO3

Year:
1982
Language:
english
File:
PDF, 316 KB
english, 1982
8

High-power low-divergence superradiance diode

Year:
1982
Language:
english
File:
PDF, 437 KB
english, 1982
9

Palladium and platinum gate metal-oxide-semiconductor capacitors in hydrogen and oxygen mixtures

Year:
1982
Language:
english
File:
PDF, 448 KB
english, 1982
10

High-power nitrogen laser

Year:
1982
Language:
english
File:
PDF, 440 KB
english, 1982
11

Observation of optical signatures of materials

Year:
1982
Language:
english
File:
PDF, 410 KB
english, 1982
12

Critical currents in the Chevrel-phase lead molybdenum sulfide thin films

Year:
1982
Language:
english
File:
PDF, 453 KB
english, 1982
13

Compact integrated dc SQUID gradiometer

Year:
1982
Language:
english
File:
PDF, 439 KB
english, 1982
15

Frequency synchronization and phase locking of CO2 lasers

Year:
1982
Language:
english
File:
PDF, 483 KB
english, 1982
16

Hydrogen annealing of silicon gate-nitride-oxide-silicon nonvolatile memory devices

Year:
1982
Language:
english
File:
PDF, 498 KB
english, 1982
18

Spot-size dependence of laser-induced damage to diamond-turned Cu mirrors

Year:
1982
Language:
english
File:
PDF, 554 KB
english, 1982
19

Low-noise GaAs field-effect transistor made by molecular beam epitaxy

Year:
1982
Language:
english
File:
PDF, 462 KB
english, 1982
21

Lasing properties of InGaAsP buried heterojunction lasers grown on a mesa substrate

Year:
1982
Language:
english
File:
PDF, 388 KB
english, 1982
23

Impurity redistribution in GaAs metalorganic vapor phase epilayers

Year:
1982
Language:
english
File:
PDF, 416 KB
english, 1982
24

Silicon solar cell with a novel low-resistance emitter structure

Year:
1982
Language:
english
File:
PDF, 396 KB
english, 1982
25

Role of dangling bonds and antisite defects in rapid and gradual III-V laser degradation

Year:
1982
Language:
english
File:
PDF, 394 KB
english, 1982
26

Laser emission from stimulated spin-flip Raman scattering in (Cd,Mn)Se

Year:
1982
Language:
english
File:
PDF, 427 KB
english, 1982
28

Lateral beam collimation of a phased array semiconductor laser

Year:
1982
Language:
english
File:
PDF, 414 KB
english, 1982
30

Profiling of deep impurities by persistent photocurrent measurements

Year:
1982
Language:
english
File:
PDF, 334 KB
english, 1982
31

Picosecond optical electronic sampling: Characterization of high-speed photodetectors

Year:
1982
Language:
english
File:
PDF, 494 KB
english, 1982
32

Four-wave mixing via optically generated free carriers in Hg1−xCdxTe

Year:
1982
Language:
english
File:
PDF, 472 KB
english, 1982