Volume 41; Issue 9

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Applied Physics Letters
Volume 41; Issue 9

Applied Physics Letters

Volume 41; Issue 9

1

BâââX transitions in HgCl and HgI

Tellinghuisen, Joel

Journal:

Applied Physics Letters

Year:

1982

Language:

english

File:

PDF, 533 KB

english, 1982

2

Ablative hole formation process in thin tellurium and tellurium-alloy films

Journal:

Applied Physics Letters

Year:

1982

Language:

english

File:

PDF, 485 KB

english, 1982

3

Optical guided-wave interactions with magnetostatic waves at microwave frequencies

Journal:

Applied Physics Letters

Year:

1982

Language:

english

File:

PDF, 484 KB

english, 1982

4

Room-temperature cw operation in the visible spectral range of 680–700 nm by AlGaAs double heterojunction lasers

Journal:

Applied Physics Letters

Year:

1982

Language:

english

File:

PDF, 458 KB

english, 1982

5

Effect of nonuniform piezoelectric films on monolithic surface acoustic wave devices

Journal:

Applied Physics Letters

Year:

1982

Language:

english

File:

PDF, 428 KB

english, 1982

6

Fluctuations in tipping angles and delay times of simple superfluorescence

Journal:

Applied Physics Letters

Year:

1982

Language:

english

File:

PDF, 433 KB

english, 1982

7

200-MHz electrodeless discharge excitation of an XeF laser

Christensen, C. P.

Journal:

Applied Physics Letters

Year:

1982

Language:

english

File:

PDF, 482 KB

english, 1982

8

Deep photoluminescence band related to oxygen in gallium arsenide

Journal:

Applied Physics Letters

Year:

1982

Language:

english

File:

PDF, 475 KB

english, 1982

9

Mass-to-charge ratio and kinetic energy of positive ion emission accompanying fracture of a filled elastomer

Dickinson, J. T.

Journal:

Applied Physics Letters

Year:

1982

Language:

english

File:

PDF, 444 KB

english, 1982

10

Bound-free emission in HgBr

Lapatovich, Walter P.

Journal:

Applied Physics Letters

Year:

1982

Language:

english

File:

PDF, 487 KB

english, 1982

11

Suppression effect upon oxygen precipitation in silicon by carbon for a two-step thermal anneal

Ogino, Masanobu

Journal:

Applied Physics Letters

Year:

1982

Language:

english

File:

PDF, 514 KB

english, 1982

12

Logic delays of 5-μm resistor coupled Josephson logic

Journal:

Applied Physics Letters

Year:

1982

Language:

english

File:

PDF, 439 KB

english, 1982

13

Low threshold InGaAsP/InP lasers with microcleaved mirrors suitable for monolithic integration

Journal:

Applied Physics Letters

Year:

1982

Language:

english

File:

PDF, 453 KB

english, 1982

14

Model of backsurface gettering of metal impurities in silicon

Vengurlekar, Arvind S.

Journal:

Applied Physics Letters

Year:

1982

Language:

english

File:

PDF, 483 KB

english, 1982

15

Wide aperture self-sustained discharge KrF and XeCl lasers

Journal:

Applied Physics Letters

Year:

1982

Language:

english

File:

PDF, 414 KB

english, 1982

16

Multikilowatt electron beams for pumping cw ion lasers

Journal:

Applied Physics Letters

Year:

1982

Language:

english

File:

PDF, 425 KB

english, 1982

17

Relation of stimulated and spontaneous transitions in tunneling structures to the elastic current-voltage characteristic

Whiteley, S. R.

Journal:

Applied Physics Letters

Year:

1982

Language:

english

File:

PDF, 405 KB

english, 1982

18

Erratum: Niobium nitride-niobium Josephson tunnel junctions with sputtered amorphous silicon barriers [Appl. Phys. Lett. 40, 747 (1982)]

Journal:

Applied Physics Letters

Year:

1982

Language:

english

File:

PDF, 218 KB

english, 1982

19

Trap creation in channel oxides due to ion penetration of polycrystalline silicon

Smeltzer, R. K.

Journal:

Applied Physics Letters

Year:

1982

Language:

english

File:

PDF, 410 KB

english, 1982

20

Low loss poly(methyl methacrylate-d5) core optical fibers

Kaino, Toshikuni

Journal:

Applied Physics Letters

Year:

1982

Language:

english

File:

PDF, 395 KB

english, 1982

21

Metalorganic chemical vapor deposition of very thin (≂2 μm), oriented GaAs layers on tungsten substrates

Journal:

Applied Physics Letters

Year:

1982

Language:

english

File:

PDF, 401 KB

english, 1982

22

Simultaneous formation of a shallow silicon p-n junction and a shallow silicide/silicon ohmic contact by an ion implantation technique

Journal:

Applied Physics Letters

Year:

1982

Language:

english

File:

PDF, 427 KB

english, 1982

23

Carrier lifetime measurement for determination of recombination rates and doping levels of III-V semiconductor light sources

Journal:

Applied Physics Letters

Year:

1982

Language:

english

File:

PDF, 389 KB

english, 1982

24

Plasma channel formation with ultraviolet lasers

Journal:

Applied Physics Letters

Year:

1982

Language:

english

File:

PDF, 406 KB

english, 1982

25

Arc lamp zone melting and recrystallization of Si films on oxidized silicon substrates

Journal:

Applied Physics Letters

Year:

1982

Language:

english

File:

PDF, 421 KB

english, 1982

26

Magneto-optical detection of deep acceptor impurities in p-InSb

Journal:

Applied Physics Letters

Year:

1982

Language:

english

File:

PDF, 381 KB

english, 1982

27

Analysis of low-pressure chemical vapor deposited silicon nitride by Rutherford backscattering spectrometry

Journal:

Applied Physics Letters

Year:

1982

Language:

english

File:

PDF, 381 KB

english, 1982

28

Physical properties of sputtered chalcogenide films with a variable content of Fe

Journal:

Applied Physics Letters

Year:

1982

Language:

english

File:

PDF, 409 KB

english, 1982

29

Temperature dependence of minority-carrier recombination velocities at grain boundaries in silicon

Journal:

Applied Physics Letters

Year:

1982

Language:

english

File:

PDF, 427 KB

english, 1982

30

Photoelectrochemical cells based on GaAs0.6P0.4 epilayers: Stabilization and luminescent properties

Hobson, William S.

Journal:

Applied Physics Letters

Year:

1982

Language:

english

File:

PDF, 418 KB

english, 1982

31

Species and deposition angle dependence of ion beam induced densification of germanium selenide films

Journal:

Applied Physics Letters

Year:

1982

Language:

english

File:

PDF, 430 KB

english, 1982

32

Properties of high quality GaP single crystals grown by computer controlled liquid encapsulated Czochralski technique

Journal:

Applied Physics Letters

Year:

1982

Language:

english

File:

PDF, 417 KB

english, 1982

33

An enhancement mode Schottky barrier gate charge-coupled device on a high electron mobility transistor structure

Journal:

Applied Physics Letters

Year:

1982

Language:

english

File:

PDF, 398 KB

english, 1982

34

New inorganic electron resist system for high resolution lithography

Journal:

Applied Physics Letters

Year:

1982

Language:

english

File:

PDF, 484 KB

english, 1982

35

Raising damage thresholds of gradient-index antireflecting surfaces by pulsed laser irradiation

Journal:

Applied Physics Letters

Year:

1982

Language:

english

File:

PDF, 409 KB

english, 1982

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