Volume 42; Issue 10

Applied Physics Letters

Volume 42; Issue 10
1

Improved lasing performance of KrCl excimer laser

Armandillo, E.
Journal:
Applied Physics Letters
Year:
1983
Language:
english
File:
PDF, 454 KB
english, 1983
2

Gate-width dependence of radiation-induced interface traps in metal/SiO2/Si devices

Chin, M. R.
Journal:
Applied Physics Letters
Year:
1983
Language:
english
File:
PDF, 538 KB
english, 1983
3

A fundamental noise limit for biased resistors at low temperatures

Arai, Makoto R.
Journal:
Applied Physics Letters
Year:
1983
Language:
english
File:
PDF, 572 KB
english, 1983
5

Growth of single crystal epitaxial silicides on silicon by the use of template layers

Tung, R. T.
Journal:
Applied Physics Letters
Year:
1983
Language:
english
File:
PDF, 464 KB
english, 1983
6

High resolution acoustic microscopy in superfluid helium

Foster, J. S.
Journal:
Applied Physics Letters
Year:
1983
Language:
english
File:
PDF, 446 KB
english, 1983
7

Measurement of virtual crossover in liquid gallium ion source

Komuro, Masanori
Journal:
Applied Physics Letters
Year:
1983
Language:
english
File:
PDF, 470 KB
english, 1983
8

New oxide growth law and the thermal oxidation of silicon

Hu, S. M.
Journal:
Applied Physics Letters
Year:
1983
Language:
english
File:
PDF, 474 KB
english, 1983
9

Viologen-based electrochromic light scattering display

Barclay, D. J.
Journal:
Applied Physics Letters
Year:
1983
Language:
english
File:
PDF, 466 KB
english, 1983
12

A high-power, single-mode laser with twin-ridge-substrate structure

Wada, M.
Journal:
Applied Physics Letters
Year:
1983
Language:
english
File:
PDF, 369 KB
english, 1983
14

New large optical cavity laser with distributed active layers

Tsang, W. T.
Journal:
Applied Physics Letters
Year:
1983
Language:
english
File:
PDF, 467 KB
english, 1983
15

Instabilities in superconducting tunnel junctions in different thermal environments

Adler, J. G.
Journal:
Applied Physics Letters
Year:
1983
Language:
english
File:
PDF, 430 KB
english, 1983
17

Diffusion length of moles in n-InP

Diadiuk, V.
Journal:
Applied Physics Letters
Year:
1983
Language:
english
File:
PDF, 524 KB
english, 1983
18

Short cavity InGaAsP/InP lasers with dielectric mirrors

Koren, U.
Journal:
Applied Physics Letters
Year:
1983
Language:
english
File:
PDF, 414 KB
english, 1983
19

Effect of argon implantation on the activation of boron implanted in silicon

Milgram, A.
Journal:
Applied Physics Letters
Year:
1983
Language:
english
File:
PDF, 407 KB
english, 1983
21

Spectral dependence of reversible optically induced transitions in organometallic compounds

Benson, R. C.
Journal:
Applied Physics Letters
Year:
1983
Language:
english
File:
PDF, 392 KB
english, 1983
22

New dry etch for Al and Al-Cu-Si alloy: Reactively masked sputter etching with SiF4

Horwitz, Chris M.
Journal:
Applied Physics Letters
Year:
1983
Language:
english
File:
PDF, 423 KB
english, 1983
23

High mobility in liquid phase epitaxial InGaAsP free of composition modulations

Quillec, Maurice
Journal:
Applied Physics Letters
Year:
1983
Language:
english
File:
PDF, 334 KB
english, 1983
24

Specific site location of S and Si in ion-implanted GaAs

Bhattacharya, R. S.
Journal:
Applied Physics Letters
Year:
1983
Language:
english
File:
PDF, 469 KB
english, 1983