Volume 42; Issue 12

Applied Physics Letters

Volume 42; Issue 12
1

Photoelectrocatalysis on silicon in solar light

Szklarczyk, Marek, Bockris, John OM.
Journal:
Applied Physics Letters
Year:
1983
Language:
english
File:
PDF, 462 KB
english, 1983
3

Direct measurement of the carrier leakage in an InGaAsP/InP laser

Chen, T. R.
Journal:
Applied Physics Letters
Year:
1983
Language:
english
File:
PDF, 386 KB
english, 1983
4

Crystal growth in amorphous silicon thin films induced by incoherent light flashes

Tong, B. Y.
Journal:
Applied Physics Letters
Year:
1983
Language:
english
File:
PDF, 538 KB
english, 1983
5

Optimization of electrically excited XeF(C→A) laser performance

Nighan, W. L.
Journal:
Applied Physics Letters
Year:
1983
Language:
english
File:
PDF, 492 KB
english, 1983
8

Solid phase diffusivity effect on nonequilibrium dopant segregation

Campisano, Salvatore Ugo
Journal:
Applied Physics Letters
Year:
1983
Language:
english
File:
PDF, 458 KB
english, 1983
9

UV laser photopolymerization of volatile surface-adsorbed methyl methacrylate

Tsao, J. Y.
Journal:
Applied Physics Letters
Year:
1983
Language:
english
File:
PDF, 500 KB
english, 1983
10

High-speed x-ray sensitive photoconducting detector

Auston, D. H.
Journal:
Applied Physics Letters
Year:
1983
Language:
english
File:
PDF, 471 KB
english, 1983
11

High-pressure high-current transversely excited Sr+ recombination laser

Butler, M. S.
Journal:
Applied Physics Letters
Year:
1983
Language:
english
File:
PDF, 469 KB
english, 1983
12

Stimulated bremsstrahlung masers

Palmer, A. J.
Journal:
Applied Physics Letters
Year:
1983
Language:
english
File:
PDF, 428 KB
english, 1983
14

Degradation of 1.3-μm InP/InGaAsP light-emitting diodes with misfit dislocations

Chin, A. K.
Journal:
Applied Physics Letters
Year:
1983
Language:
english
File:
PDF, 445 KB
english, 1983
15

Diffusion of arsenic in silicon: Validity of the percolation model

Mathiot, D.
Journal:
Applied Physics Letters
Year:
1983
Language:
english
File:
PDF, 326 KB
english, 1983
16

Bifurcation of deep levels in metastable (GaAs)1−xGe2x alloys

Newman, Kathie E.
Journal:
Applied Physics Letters
Year:
1983
Language:
english
File:
PDF, 444 KB
english, 1983
17

Ultrahigh speed modulation-doped heterostructure field-effect photodetectors

Chen, C. Y.
Journal:
Applied Physics Letters
Year:
1983
Language:
english
File:
PDF, 413 KB
english, 1983
18

Shot noise effect on the nonzero voltage state of the hysteretic Josephson junction

Ben-Jacob, E.
Journal:
Applied Physics Letters
Year:
1983
Language:
english
File:
PDF, 396 KB
english, 1983
19

Silicon molecular beam epitaxy on gallium phosphide

de Jong, T.
Journal:
Applied Physics Letters
Year:
1983
Language:
english
File:
PDF, 433 KB
english, 1983
20

Thermoelastic hologram for focused ultrasound

von Gutfeld, R. J.
Journal:
Applied Physics Letters
Year:
1983
Language:
english
File:
PDF, 442 KB
english, 1983
21

Solid phase epitaxial regrowth of amorphous silicon on molecular beam epitaxial silicon/Si layers

Christou, A.
Journal:
Applied Physics Letters
Year:
1983
Language:
english
File:
PDF, 419 KB
english, 1983