Volume 42; Issue 2

Applied Physics Letters

Volume 42; Issue 2
1

20-GHz bandwidth GaAs photodiode

Wang, S. Y.
Journal:
Applied Physics Letters
Year:
1983
Language:
english
File:
PDF, 438 KB
english, 1983
2

PtMnSb, a material with very high magneto-optical Kerr effect

van Engen, P. G.
Journal:
Applied Physics Letters
Year:
1983
Language:
english
File:
PDF, 380 KB
english, 1983
3

Thermophonic investigation of switching and memory phenomena in thick amorphous chalcogenide films

Kotz, J.
Journal:
Applied Physics Letters
Year:
1983
Language:
english
File:
PDF, 540 KB
english, 1983
4

High power single mode InGaAsP lasers fabricated by single step liquid phase epitaxy

Oron, M.
Journal:
Applied Physics Letters
Year:
1983
Language:
english
File:
PDF, 497 KB
english, 1983
5

Chemical stabilization of the coumarin 1 dye laser

von Trebra, Robert J.
Journal:
Applied Physics Letters
Year:
1983
Language:
english
File:
PDF, 489 KB
english, 1983
6

Pearson distributions for ion ranges

Winterbon, K. B.
Journal:
Applied Physics Letters
Year:
1983
Language:
english
File:
PDF, 390 KB
english, 1983
7

Point-source x-ray backlighting for high-density plasma diagnostics

Miyanaga, M.
Journal:
Applied Physics Letters
Year:
1983
Language:
english
File:
PDF, 485 KB
english, 1983
8

Ion implanted grating couplers for optical waveguides

Kurmer, J. P.
Journal:
Applied Physics Letters
Year:
1983
Language:
english
File:
PDF, 475 KB
english, 1983
9

Photovoltaic properties of cadmium sulfide/trivalent-metal phthalocyanine heterojunction devices

Hor, Ah-Mee
Journal:
Applied Physics Letters
Year:
1983
Language:
english
File:
PDF, 455 KB
english, 1983
11

High density optical disk with V-shaped grooves

Nagashima, Michiyoshi
Journal:
Applied Physics Letters
Year:
1983
Language:
english
File:
PDF, 506 KB
english, 1983
12

Radiation effects on modulation-doped GaAs-AlxGa1−xAs heterostructures

Tsui, D. C.
Journal:
Applied Physics Letters
Year:
1983
Language:
english
File:
PDF, 422 KB
english, 1983
16

Visible cw single quantum well (AlGa)As diode lasers

Lindström, C.
Journal:
Applied Physics Letters
Year:
1983
Language:
english
File:
PDF, 406 KB
english, 1983
17

Lateral diffusion of arsenic in low pressure chemical vapor deposited polycrystalline silicon

Lewis, N.
Journal:
Applied Physics Letters
Year:
1983
Language:
english
File:
PDF, 322 KB
english, 1983
18

Luminescence measurements of laser induced recombination centers in (Al,Ga)As

Zysset, B.
Journal:
Applied Physics Letters
Year:
1983
Language:
english
File:
PDF, 392 KB
english, 1983
19

Transversely excited Sr+ recombination laser

Brandt, M.
Journal:
Applied Physics Letters
Year:
1983
Language:
english
File:
PDF, 407 KB
english, 1983
20

Determination of the minimum x-ray flux for effective preionization of an XeCl laser

Tallman, C. R.
Journal:
Applied Physics Letters
Year:
1983
Language:
english
File:
PDF, 427 KB
english, 1983
21

Dimensionless analysis of ideal imploding liners

Gupta, R. P.
Journal:
Applied Physics Letters
Year:
1983
Language:
english
File:
PDF, 310 KB
english, 1983
23

Impurity induced disordering of strained GaP-GaAs1−xPx(x∼0.6) superlattices

Camras, M. D.
Journal:
Applied Physics Letters
Year:
1983
Language:
english
File:
PDF, 492 KB
english, 1983