Volume 42; Issue 3

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Applied Physics Letters
Volume 42; Issue 3

Applied Physics Letters

Volume 42; Issue 3

1

High quality polysilicon by amorphous low pressure chemical vapor deposition

Journal:

Applied Physics Letters

Year:

1983

Language:

english

File:

PDF, 516 KB

english, 1983

2

Observation of relaxation resonance effects in the field spectrum of semiconductor lasers

Journal:

Applied Physics Letters

Year:

1983

Language:

english

File:

PDF, 422 KB

english, 1983

3

Infrared absorption of thin metal films: Pt on Si

Journal:

Applied Physics Letters

Year:

1983

Language:

english

File:

PDF, 528 KB

english, 1983

4

Abel inversion with a simple analytic representation for experimental data

Journal:

Applied Physics Letters

Year:

1983

Language:

english

File:

PDF, 496 KB

english, 1983

5

Evaluation of aluminum-GaAs Schottky barriers using Norde’s modified current-voltage analysis

Schwartz, G. P.

Journal:

Applied Physics Letters

Year:

1983

Language:

english

File:

PDF, 467 KB

english, 1983

6

Orientation effect of self-aligned source/drain planar GaAs Schottky barrier field-effect transistors

Journal:

Applied Physics Letters

Year:

1983

Language:

english

File:

PDF, 382 KB

english, 1983

7

Intermittency in Josephson junctions

Journal:

Applied Physics Letters

Year:

1983

Language:

english

File:

PDF, 454 KB

english, 1983

8

Origin of the difference in the open circuit voltage between p-i-n type and n-i-p type hydrogenated amorphous silicon solar cells

Journal:

Applied Physics Letters

Year:

1983

Language:

english

File:

PDF, 470 KB

english, 1983

9

Picosecond correlation measurements of indium phosphide photoconductors

Journal:

Applied Physics Letters

Year:

1983

Language:

english

File:

PDF, 485 KB

english, 1983

10

Saturation splitting of phase-conjugate line through resonant degenerate four-wave mixing in SF6

Boulnois, J. L.

Journal:

Applied Physics Letters

Year:

1983

Language:

english

File:

PDF, 440 KB

english, 1983

11

Surface potential relaxation in a biased Hg1−xCdxTe metal-insulator-semiconductor capacitor

Journal:

Applied Physics Letters

Year:

1983

Language:

english

File:

PDF, 481 KB

english, 1983

12

Time-resolved x-ray diffraction measurement of the temperature and temperature gradients in silicon during pulsed laser annealing

Journal:

Applied Physics Letters

Year:

1983

Language:

english

File:

PDF, 455 KB

english, 1983

13

Determination of grain boundary barrier height and interface states by a focused laser beam

Journal:

Applied Physics Letters

Year:

1983

Language:

english

File:

PDF, 455 KB

english, 1983

14

Spectroscopic detection of silylene in the infrared multiphoton decomposition of silane

O’Keefe, J. F.

Journal:

Applied Physics Letters

Year:

1983

Language:

english

File:

PDF, 492 KB

english, 1983

15

Surface acoustic wave memory correlator on semi-insulating GaAs

Journal:

Applied Physics Letters

Year:

1983

Language:

english

File:

PDF, 466 KB

english, 1983

16

Growth of CdTe films on sapphire by molecular beam epitaxy

Journal:

Applied Physics Letters

Year:

1983

Language:

english

File:

PDF, 409 KB

english, 1983

17

Optically pumped sodium-dimer supersonic-beam laser

Journal:

Applied Physics Letters

Year:

1983

Language:

english

File:

PDF, 501 KB

english, 1983

18

Residual double acceptors in bulk GaAs

Journal:

Applied Physics Letters

Year:

1983

Language:

english

File:

PDF, 492 KB

english, 1983

19

Photoexcited carrier lifetime and Auger recombination in 1.3-μm InGaAsP

Journal:

Applied Physics Letters

Year:

1983

Language:

english

File:

PDF, 424 KB

english, 1983

20

Plasma enhanced beam deposition of thin dielectric films

Chang, R. P. H.

Journal:

Applied Physics Letters

Year:

1983

Language:

english

File:

PDF, 415 KB

english, 1983

21

Plasma ion temperature measurements via charge exchange recombination radiation

Journal:

Applied Physics Letters

Year:

1983

Language:

english

File:

PDF, 404 KB

english, 1983

22

Single-valued strength of ‘‘perfect’’ silica fibers

Kurkjian, C. R.

Journal:

Applied Physics Letters

Year:

1983

Language:

english

File:

PDF, 381 KB

english, 1983

23

Stimulated emission in strained GaAs1−xPx-GaAs1−yPy superlattices

Ludowise, M. J.

Journal:

Applied Physics Letters

Year:

1983

Language:

english

File:

PDF, 458 KB

english, 1983

24

Formation of an amorphous metallic hydride by reaction of hydrogen with crystalline intermetallic compounds—A new method of synthesizing metallic glasses

Journal:

Applied Physics Letters

Year:

1983

Language:

english

File:

PDF, 430 KB

english, 1983

25

Infrared to visible up-conversion using GaP light-emitting diodes

Journal:

Applied Physics Letters

Year:

1983

Language:

english

File:

PDF, 441 KB

english, 1983

26

X-ray photoelectron spectroscopic study of the oxide removal mechanism of GaAs (100) molecular beam epitaxial substrates in in situ heating

Journal:

Applied Physics Letters

Year:

1983

Language:

english

File:

PDF, 391 KB

english, 1983

27

Optically pumped 1.55-μm double heterostructure GaxAlyIn1−x−yAs/AluIn1−uAs lasers grown by molecular beam epitaxy

Journal:

Applied Physics Letters

Year:

1983

Language:

english

File:

PDF, 452 KB

english, 1983

28

Photon-assisted tunneling at 246 and 604 GHz in small-area superconducting tunnel junctions

Journal:

Applied Physics Letters

Year:

1983

Language:

english

File:

PDF, 415 KB

english, 1983

29

Characteristics of modulation-doped AlxGa1−xAl/GaAs field-effect transistors: Effect of donor-electron separation

Drummond, T. J.

Journal:

Applied Physics Letters

Year:

1983

Language:

english

File:

PDF, 417 KB

english, 1983

30

Initial stage of sputtering in silicon oxide

Journal:

Applied Physics Letters

Year:

1983

Language:

english

File:

PDF, 414 KB

english, 1983

31

H+2 ion-implantation effect in vacuum-evaporated permalloy films

Journal:

Applied Physics Letters

Year:

1983

Language:

english

File:

PDF, 403 KB

english, 1983

32

Effect of high doping on the photoluminescence edge of GaAs and InP

Bendapudi, Seishu

Journal:

Applied Physics Letters

Year:

1983

Language:

english

File:

PDF, 418 KB

english, 1983

33

Characteristics of Schottky diodes at 10.6 μm

Journal:

Applied Physics Letters

Year:

1983

Language:

english

File:

PDF, 381 KB

english, 1983

34

Photolysis of KI/Xe mixtures at 193 nm: Observation of KXe∗ emission

Schilowitz, A. M.

Journal:

Applied Physics Letters

Year:

1983

Language:

english

File:

PDF, 491 KB

english, 1983

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