Volume 43; Issue 6

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Applied Physics Letters
Volume 43; Issue 6

Applied Physics Letters

Volume 43; Issue 6

1

Resonant tunneling through quantum wells at frequencies up to 2.5 THz

Sollner, T. C. L. G., Goodhue, W. D., Tannenwald, P. E., Parker, C. D., Peck, D. D.

Journal:

Applied Physics Letters

Year:

1983

Language:

english

File:

PDF, 528 KB

english, 1983

2

Charge trapping instabilities in amorphous silicon‐silicon nitride thin‐film transistors

Journal:

Applied Physics Letters

Year:

1983

Language:

english

File:

PDF, 504 KB

english, 1983

3

Characteristics of Schottky diodes with microcluster interface

Schneider, M. V.

Journal:

Applied Physics Letters

Year:

1983

Language:

english

File:

PDF, 434 KB

english, 1983

4

Comment on ââRaman scattering with nanosecond resolution during pulsed laser annealing of siliconââ [Appl. Phys. Lett. 41, 700 (1982)]

von der Linde, D.

Journal:

Applied Physics Letters

Year:

1983

Language:

english

File:

PDF, 382 KB

english, 1983

5

Wavelength-selective absorption enhancement in thin-film solar cells

Journal:

Applied Physics Letters

Year:

1983

Language:

english

File:

PDF, 471 KB

english, 1983

6

Dissipation-theory treatment of the transition from diffusion-controlled to diffusionless solidification

Aziz, Michael J.

Journal:

Applied Physics Letters

Year:

1983

Language:

english

File:

PDF, 473 KB

english, 1983

7

Energy levels and alloy scattering in InP-In (Ga)As heterojunctions

Journal:

Applied Physics Letters

Year:

1983

Language:

english

File:

PDF, 367 KB

english, 1983

8

Characteristic electronic defects at the Si-SiO2 interface

Journal:

Applied Physics Letters

Year:

1983

Language:

english

File:

PDF, 444 KB

english, 1983

9

Shock wave pressure enhancement using short wavelength (0.35 μm) laser irradiation

Journal:

Applied Physics Letters

Year:

1983

Language:

english

File:

PDF, 450 KB

english, 1983

10

Deep level impurities and current collection in CdS/CdTe thin-film solar cells

Journal:

Applied Physics Letters

Year:

1983

Language:

english

File:

PDF, 472 KB

english, 1983

11

Optical recording media with thermal coloration

Morinaka, Akira

Journal:

Applied Physics Letters

Year:

1983

Language:

english

File:

PDF, 410 KB

english, 1983

12

Localized wet-chemical etching of InP induced by laser heating

Bjorkholm, J. E.

Journal:

Applied Physics Letters

Year:

1983

Language:

english

File:

PDF, 502 KB

english, 1983

13

Modification of optical properties of GaAs-Ga1−xAlxAs superlattices due to band mixing

Chang, Yia-Chung

Journal:

Applied Physics Letters

Year:

1983

Language:

english

File:

PDF, 525 KB

english, 1983

14

Sputtered Schottky barrier solar cells on p-type GaAs

Edweeb, Mousa E.

Journal:

Applied Physics Letters

Year:

1983

Language:

english

File:

PDF, 470 KB

english, 1983

15

Characterization of WSix/GaAs Schottky contacts

Journal:

Applied Physics Letters

Year:

1983

Language:

english

File:

PDF, 458 KB

english, 1983

16

Radical species in argon-silane discharges

Journal:

Applied Physics Letters

Year:

1983

Language:

english

File:

PDF, 503 KB

english, 1983

17

Quantitative ion beam process for the deposition of compound thin films

Harper, J. M. E.

Journal:

Applied Physics Letters

Year:

1983

Language:

english

File:

PDF, 474 KB

english, 1983

18

Stable field electron emission from a tungsten tip under the ultrahigh vacuum of 10−10 Pa

Journal:

Applied Physics Letters

Year:

1983

Language:

english

File:

PDF, 392 KB

english, 1983

19

Double zinc diffusion fronts in InP—Theory and experiment

Journal:

Applied Physics Letters

Year:

1983

Language:

english

File:

PDF, 452 KB

english, 1983

20

Phase-locked semiconductor laser array with separate contacts

Journal:

Applied Physics Letters

Year:

1983

Language:

english

File:

PDF, 421 KB

english, 1983

21

Epitaxial InP/fluoride/InP(001) double heterostructures grown by molecular beam epitaxy

Journal:

Applied Physics Letters

Year:

1983

Language:

english

File:

PDF, 487 KB

english, 1983

22

Passive mode locking of a long pulse XeCl laser

Journal:

Applied Physics Letters

Year:

1983

Language:

english

File:

PDF, 445 KB

english, 1983

23

Electronic wavelength tuning with semiconductor integrated etalon interference lasers

Antreasyan, Arsam

Journal:

Applied Physics Letters

Year:

1983

Language:

english

File:

PDF, 387 KB

english, 1983

24

Photoacoustic determination of thermal diffusivity of solids: Application to CdS

Journal:

Applied Physics Letters

Year:

1983

Language:

english

File:

PDF, 342 KB

english, 1983

25

Electronic excitation in electron bombardment enhancement of chemical reactions

Ashby, C. I. H.

Journal:

Applied Physics Letters

Year:

1983

Language:

english

File:

PDF, 406 KB

english, 1983

26

Incoherent light-induced diffusion of arsenic into silicon from a spin-on source

Borisenko, V. E.

Journal:

Applied Physics Letters

Year:

1983

Language:

english

File:

PDF, 392 KB

english, 1983

27

Gain on the green (504 nm) excimer band of I2

Journal:

Applied Physics Letters

Year:

1983

Language:

english

File:

PDF, 451 KB

english, 1983

28

Wideband frequency conversion in the UV by nine orders of stimulated Raman scattering in a XeCl laser pumped multimode silica fiber

Journal:

Applied Physics Letters

Year:

1983

Language:

english

File:

PDF, 339 KB

english, 1983

29

Enhanced frequency modulation in cleaved-coupled-cavity semiconductor lasers with reduced spurious intensity modulation

Journal:

Applied Physics Letters

Year:

1983

Language:

english

File:

PDF, 430 KB

english, 1983

30

Correlation among secondary ion mass spectrometry, cross-section transmission electron microscopy, and Rutherford backscattering analyses for defect density and depth distribution determination

Journal:

Applied Physics Letters

Year:

1983

Language:

english

File:

PDF, 381 KB

english, 1983

31

Low-loss integrated optical waveguides fabricated by nitrogen ion implantation

Journal:

Applied Physics Letters

Year:

1983

Language:

english

File:

PDF, 354 KB

english, 1983

32

Growth of Ga0.47In0.53As-InP quantum wells by low pressure metalorganic chemical vapor deposition

Journal:

Applied Physics Letters

Year:

1983

Language:

english

File:

PDF, 469 KB

english, 1983

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