Volume 44; Issue 1

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Applied Physics Letters
Volume 44; Issue 1

Applied Physics Letters

Volume 44; Issue 1

1

Meyer–Neldel rule in solar cells

Coutts, T. J., Pearsall, N. M.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 425 KB

english, 1984

2

Polyimide passivation of In0.53Ga0.47As, InP, and InGaAsP/InP p‐n junction structures

Yeats, R., Von Dessonneck, K.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 591 KB

english, 1984

3

Scaling relations in the equation of state, thermal expansion, and melting of metals

Guinea, Francisco, Rose, James H., Smith, John R., Ferrante, John

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 493 KB

english, 1984

4

Effect of temperature gradients on the first‐order Raman spectrum of Si

Raptis, J., Liarokapis, E., Anastassakis, E.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 557 KB

english, 1984

5

Transient enhanced diffusion in arsenic-implanted short time annealed silicon

Kalish, R., Sedgwick, T. O., Mader, S., Shatas, S.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 470 KB

english, 1984

6

High-energy product Nd-Fe-B permanent magnets

Croat, J. J., Herbst, J. F., Lee, R. W., Pinkerton, F. E.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 416 KB

english, 1984

7

Localization induced electron-hole transition rate enhancement in GaAs quantum wells

Christen, J., Bimberg, D., Steckenborn, A., Weimann, G.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 472 KB

english, 1984

8

Probing the transition layer at the SiO2-Si interface using core level photoemission

Hollinger, G., Himpsel, F. J.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 412 KB

english, 1984

9

Pseudomorphic growth of GexSi1−x on silicon by molecular beam epitaxy

Bean, J. C., Sheng, T. T., Feldman, L. C., Fiory, A. T., Lynch, R. T.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 539 KB

english, 1984

10

Stimulated emission of GaAs-Al0.6Ga0.4As multiple quantum well structures grown by metalorganic chemical vapor deposition

Xu, Z. Y., Kreismanis, V. G., Tang, C. L.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 475 KB

english, 1984

11

Ion mixing of markers in SiO2 and Si

Barcz, A. J., Paine, B. M., Nicolet, M-A.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 517 KB

english, 1984

12

Single mode operation of a current pulsed GaAlAs laser with dispersive external feedback

Andrews, John R.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 465 KB

english, 1984

13

Temperature dependence of the mobility of two-dimensional hole systems in modulation-doped GaAs-(AlGa)As

Störmer, H. L., Gossard, A. C., Wiegmann, W., Blondel, R., Baldwin, K.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 482 KB

english, 1984

14

Resonant Fowler–Nordheim tunneling in n−GaAs-undoped AlxGa1−xAs-n+GaAs capacitors

Hickmott, T. W., Solomon, P. M., Fischer, R., Morkoç, H.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 474 KB

english, 1984

15

Time-resolved acoustic pulses generated by 4-MeV protons stopping in aluminum

Sieger, G. E., Lefevre, H. W.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 500 KB

english, 1984

16

Phase noise characteristics of single mode semiconductor lasers with optical feedback

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 469 KB

english, 1984

17

Doping effects in off-stoichiometric glow discharge amorphous silicon nitride

Alvarez, F., Chambouleyron, I., Constantino, C., Cisneros, J. I.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 494 KB

english, 1984

18

Pulsed laser melting of amorphous silicon layers

Narayan, J., White, C. W.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 543 KB

english, 1984

19

Variation of intervalence band absorption with hole concentration in p-type InP

Casey, H. C., Carter, P. L.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 371 KB

english, 1984

20

Reduction of interface states in Pt-GaAs buried Schottky barrier

Onuma, Takeshi, Uenoyama, Takeshi, Yagita, Hideki

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 401 KB

english, 1984

21

Hysteresis in a low-pressure argon discharge

Merlino, Robert L., Cartier, Steven L.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 404 KB

english, 1984

22

Time-resolved measurement of hole sweepout in a GaAs photoconductor

Von Lehmen, A., Ballantyne, J. M.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 453 KB

english, 1984

23

Reduction of silicon-aluminum interdiffusion by improved semiconductor surface ordering

Brillson, L. J., Slade, M. L., Katnani, A. D., Kelly, M., Margaritondo, G.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 494 KB

english, 1984

24

High-speed optical modulation with GaAs/GaAlAs quantum wells in a p-i-n diode structure

Wood, T. H., Burrus, C. A., Miller, D. A. B., Chemla, D. S., Damen, T. C., Gossard, A. C., Wiegmann, W.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 520 KB

english, 1984

25

Fermi energy pinning behavior and chemical reactivity of the Pd/GaAs (110) interface

Kendelewicz, T., Petro, W. G., Pan, S. H., Williams, M. D., Lindau, I., Spicer, W. E.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 538 KB

english, 1984

26

Surface segregation and diffusion kinetics study of a Pt-Ir alloy using the time-of-flight atom-probe field ion microscope

Ahmad, M., Tsong, T. T.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 410 KB

english, 1984

27

Observation of Si2 in a chemical vapor deposition reactor by laser excited fluorescence

Ho, Pauline, Breiland, William G.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 438 KB

english, 1984

28

Bistability in coupled cavity semiconductor lasers

Dutta, N. K., Agrawal, G. P., Focht, M. W.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 415 KB

english, 1984

29

Blocking of threading dislocations by Hg1−xCdxTe expitaxial layers

James, T. W., Stoller, R. E.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 429 KB

english, 1984

30

Poling behavior of polyvinylidene fluoride at room temperature

Mopsik, F. I., DeReggi, A. S.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 353 KB

english, 1984

31

Compensation effects in Si-doped GaAs grown by molecular beam epitaxy

Nottenburg, R., Bühlmann, H. J., Frei, M., Ilegems, M.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 423 KB

english, 1984

32

High-performance, focusing-type, time-of-flight atom probe with a channeltron as a signal detector

Sakurai, Toshio, Hashizume, T., Jimbo, A.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 428 KB

english, 1984

33

Carbon in semi-insulating, liquid encapsulated Czochralski GaAs

Hunter, A. T., Kimura, H., Baukus, J. P., Winston, H. V., Marsh, O. J.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 453 KB

english, 1984

34

Improved AlxGa1−xAs bulk lasers with superlattice interfaces

Fischer, R., Klem, J., Drummond, T. J., Kopp, W., Morkoç, H., Anderson, E., Pion, M.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 443 KB

english, 1984

35

Paramagnetic trivalent silicon centers in gamma irradiated metal-oxide-silicon structures

Lenahan, P. M., Dressendorfer, P. V.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 415 KB

english, 1984

36

Procedure for electron and ion lens optimization

Szilagyi, M., Yakowitz, S. J., Duff, M. O.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 394 KB

english, 1984

37

Iodine ion milling of indium-containing compound semiconductors

Chew, N. G., Cullis, A. G.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 449 KB

english, 1984

38

Structural evolution of very thin silicon oxide films during thermal growth in dry oxygen

Agius, B., Rigo, S., Rochet, F., Froment, M., Maillot, C., Roulet, H., Dufour, G.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 405 KB

english, 1984

39

Optical heating of electron-hole plasma in silicon by picosecond pulses

Lompré, L.-A., Liu, J.-M., Kurz, H., Bloembergen, N.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 403 KB

english, 1984

40

Infrared photodetection in proton-bombarded InP

Miyoshi, T., Tien, P. K., Martin, R. J., Tennant, D. M., Johnson, A. M., Downey, P. M.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 346 KB

english, 1984

41

Graded collector heterojunction bipolar transistor

Chiu, L. C., Harder, Ch., Margalit, S., Yariv, A.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 384 KB

english, 1984

42

Silicon photodetector integrated on a lithium tantalate substrate

Reedy, R. E., Lee, S. H.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 452 KB

english, 1984

43

Urea optical parametric oscillator

Donaldson, William R., Tang, C. L.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 492 KB

english, 1984

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