Volume 44; Issue 11

Main
Applied Physics Letters
Volume 44; Issue 11

Applied Physics Letters

Volume 44; Issue 11

1

High mobility electron gas in selectively doped n:AlGaAs/GaAs heterojunctions

Heiblum, M., Mendez, E. E., Stern, Frank

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 556 KB

english, 1984

2

Ultrahigh speed direct coupled logic gate fabricated with NbN/Pb Josephson junctions

Hatano, Y., Nishino, T., Tarutani, Y., Kawabe, U.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 476 KB

english, 1984

3

Theory of excitonic photoluminescence linewidth in semiconductor alloys

Singh, J., Bajaj, K. K.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 463 KB

english, 1984

4

Optical studies of cerium doped yttrium aluminum garnet single crystals

Wong, C. M., Rotman, S. R., Warde, C.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 384 KB

english, 1984

5

Brillouin scattering in thin-film waveguides

Janaky, T. P., Prasada Rao, T. A., Narasimha Rao, D. V. G. L., Narayanaswamy, C. K.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 473 KB

english, 1984

6

New low dark current, high speed Al0.48In0.52As/ Ga0.47In0.53As avalanche photodiode by molecular beam epitaxy for long wavelength fiber optic communication systems

Capasso, F., Kasper, B., Alavi, K., Cho, A. Y., Parsey, J. M.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 451 KB

english, 1984

7

Heat treatment induced redistribution of vanadium in semi-insulating GaAs:V

Kütt, W., Bimberg, D., Maier, M., Kräutle, H., Köhl, F., Bauser, E.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 482 KB

english, 1984

8

Modulation-doped field-effect transistor based on a two-dimensional hole gas

Störmer, H. L., Baldwin, K., Gossard, A. C., Wiegmann, W.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 506 KB

english, 1984

9

Negative differential resistance at 300 K in a superlattice quantum state transfer device

Kirchoefer, S. W., Magno, R., Comas, J.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 487 KB

english, 1984

10

High performance hydrogenated amorphous Si solar cells with graded boron-doped intrinsic layers prepared from disilane at high deposition rates

Matsushita, Tsutomu, Komori, Koichiro, Konagai, Makoto, Takahashi, Kiyoshi

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 431 KB

english, 1984

11

Oxygen in zone-melting-recrystallized silicon-on-insulator films: Its distribution and possible role in sub-boundary formation

Fan, John C. C., Tsaur, B-Y., Chen, C. K., Dick, J. R., Kazmerski, L. L.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 506 KB

english, 1984

12

Pulsed soft x-ray response of InP:Fe photoconductors

Kania, D. R., Bartlett, R. J., Wagner, R. S., Hammond, R. B., Pianetta, P.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 488 KB

english, 1984

13

New mode of plasma deposition in a capacitively coupled reactor

Hamasaki, T., Ueda, M., Chayahara, A., Hirose, M., Osaka, Y.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 458 KB

english, 1984

14

Optical recording applications of reactive ion beam sputter deposited thin-film composites

Hebard, A. F., Blonder, G. E., Suh, S. Y.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 511 KB

english, 1984

15

Infrared birefringence of liquid crystals

Wu, Shin-Tson, Efron, Uzi, Hess, LaVerne D.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 422 KB

english, 1984

16

Current-voltage characteristics of a Si-BP-Si double heterojunction

Sugiura, Souichi, Yoshida, Tohru, Shono, Katsufusa, Dumin, David. J.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 397 KB

english, 1984

17

Disorder-activated modes in Raman spectra of Al0.3Ga0.7As encapsulated with Si3N4 films

Kamijoh, T., Hashimoto, A., Takano, H., Sakuta, M.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 324 KB

english, 1984

18

Low-noise microwave field-effect transistors using organometallic GaAs

Aebi, V., Bandy, S., Nishimoto, C., Zdasiuk, G.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 394 KB

english, 1984

19

Transmission electron microscopy and high resolution electron microscopy studies of shallow (Rp∼20 nm) As and B implanted and electron beam annealed silicon

McMillan, G. B., Smith, David J., Gowers, J. P., Ahmed, H.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 539 KB

english, 1984

20

Amorphous and metastable phases formation in Au-Ge bilayers by ion beam mixing

Chu, Te-Chang, Cannavò, S., Rimini, E., Campisano, S. U.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 410 KB

english, 1984

21

Temperature dependence of threshold current in III-V semiconductor lasers: Experimental prediction and explanation

Su, C. B., Olshansky, R., Manning, J., Powazinik, W.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 407 KB

english, 1984

22

Increased radiation resistance in lithium-counterdoped silicon solar cells

Weinberg, I., Mehta, S., Swartz, C. K.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 415 KB

english, 1984

23

Chemical reactions at the noble and near-noble metal/InP interfaces: Comparison to Si and GaAs

Kendelewicz, T., Petro, W. G., Lindau, I., Spicer, W. E.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 467 KB

english, 1984

24

High field performance of superconducting magnets using powder metallurgy processed Cu-Nb-Sn and Nb-Al

Zaleski, A. J., Foner, S.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 395 KB

english, 1984

25

Variable-angle dry etching with a hollow cathode

Horwitz, Chris M.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 401 KB

english, 1984

26

Room-temperature cw operation of InGaAsP/InGaP lasers at 727 nm grown on GaAs substrates by liquid phase epitaxy

Wakao, K., Nishi, H., Kusunoki, T., Isozumi, S., Ohsaka, S.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 478 KB

english, 1984

27

Metalorganic vapor deposition of CdTe and HgCdTe epitaxial films on InSb and GaAs substrates

Hoke, W. E., Lemonias, P. J., Traczewski, R.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 518 KB

english, 1984

To build up a library is to create a life. It’s never just a random collection of books.

— Carlos María Domínguez

Official channel

Z-Library Desktop Launcher

Tor version

Z-Library

Z-Library Since 2009 support@1delivery.pm

EnglishРусскийEspañolItalianoελληνικάاللغة العربيةBahasa IndonesiaBahasa Malaysiaहिन्दीDeutschFrançaisPortuguêsУкраїнськаPolski中文繁體中文日本語Tiếng ViệtAzərbaycan DiliՀայոց լեզուภาษาไทยTürk Diliქართველიবাংলাپښتوతెలుగుاردو한국어SrpskiБългарски