Volume 44; Issue 3

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Applied Physics Letters
Volume 44; Issue 3

Applied Physics Letters

Volume 44; Issue 3

1

Hot electrons in modulation‐doped GaAs‐AlGaAs heterostructures

Shah, Jagdeep, Pinczuk, A., Stormer, H. L., Gossard, A. C., Wiegmann, W.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 498 KB

english, 1984

2

Coupled‐mode analysis of phase‐locked injection laser arrays

Butler, J. K., Ackley, D. E., Botez, D.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 544 KB

english, 1984

3

Direct energy gap of Al1−xInxAs lattice matched to InP

Wakefield, B., Halliwell, M. A. G., Kerr, T., Andrews, D. A., Davies, G. J., Wood, D. R.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 417 KB

english, 1984

4

Subbands and charge control in a two-dimensional electron gas field-effect transistor

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 438 KB

english, 1984

5

Effects of UV irradiation on the inverted surface layer in semiconductor-insulator-semiconductor devices

Ghosh, Amal K., Haberman, Joel I., Feng, Tom

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 395 KB

english, 1984

6

Recrystallization of amorphous gallium arsenide by ion beams

Sadana, D. K., Choksi, H., Washburn, J., Byrne, P. F., Cheung, N. W.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 497 KB

english, 1984

7

Millimeter wave emission from a rotating electron ring in a rippled magnetic field

Bekefi, G., Shefer, R. E., Destler, W. W.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 493 KB

english, 1984

8

Thermal diffusion of Pt in silicon from PtSi

Mantovani, S., Nava, F., Nobili, C., Conti, M., Pignatel, G.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 499 KB

english, 1984

9

Ga0.47In0.53As/InP multiquantum well heterostructure lasers grown by molecular beam epitaxy operating at 1.53 μm

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 494 KB

english, 1984

10

Direct heterodyne detection of 245-GHz radiation using the internal narrowband oscillations of a resistive dc SQUID

Verschueren, J. M. V., Uiterwaal, A. A., van der Heijden, R. W., Wyder, P.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 537 KB

english, 1984

11

Ion beam milling of InP with an Ar/O2-gas mixture

Katzschner, W., Steckenborn, A., Löffler, R., Grote, N.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 420 KB

english, 1984

12

Low-temperature silicon epitaxy using low pressure chemical vapor deposition with and without plasma enhancement

Donahue, T. J., Burger, W. R., Reif, R.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 457 KB

english, 1984

13

Growth of (100)CdTe films of high structural perfection on (100)GaAs substrates by molecular beam epitaxy

Bicknell, R. N., Yanka, R. W., Giles, N. C., Schetzina, J. F., Magee, T. J., Leung, C., Kawayoshi, H.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 520 KB

english, 1984

14

Identification of oxygen-related midgap level in GaAs

Lagowski, J., Lin, D. G., Aoyama, T., Gatos, H. C.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 493 KB

english, 1984

15

Interaction in Cu/Al and Pt/Cu/Al thin films: Competing oxygen effects and preferential reaction between Pt and CuAl alloy

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 416 KB

english, 1984

16

Persistent photoluminescence quenching of 0.68-eV emission in undoped semi-insulating GaAs

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 432 KB

english, 1984

17

Distributed Bragg reflector lattice-matched Pb1−xSnxTe/PbSeyTe1−y diode lasers

Kapon, Eli, Zussman, A., Katzir, A.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 427 KB

english, 1984

18

Direct modulation of semiconductor lasers at f>10 GHz by low-temperature operation

Lau, K. Y., Harder, Ch., Yariv, A.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 412 KB

english, 1984

19

Microstructure-independent acoustoelastic measurement of stress

Thompson, R. B., Smith, J. F., Lee, S. S.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 359 KB

english, 1984

20

Electron transport in In0.53Ga0.47As/plasma oxide inversion layers

Liao, A. S. H., Tell, B., Leheny, R. F., Chang, T. Y., Caridi, E. A., Beebe, E., DeWinter, J. C.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 351 KB

english, 1984

21

Illumination stimulated persistent channel depletion at selectively doped Al0.3Ga0.7As/GaAs interface

Kastalsky, A., Hwang, J. C. M.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 431 KB

english, 1984

22

Pulsed laser evaporation of Cd3As2

Dubowski, J. J., Williams, D. F.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 449 KB

english, 1984

23

Monolithic integration of an AlGaAs/GaAs multiquantum well laser and GaAs metal-semiconductor field-effect transistors on a semi-insulating GaAs substrate by molecular beam epitaxy

Sanada, T., Yamakoshi, S., Wada, O., Fujii, T., Sakurai, T., Sasaki, M.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 387 KB

english, 1984

24

Negative ion densities in NF3 discharges

Greenberg, K. E., Hebner, G. A., Verdeyen, J. T.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 379 KB

english, 1984

25

Capture and tunnel emission of electrons by deep levels in ultrathin nitrided oxides on silicon

Chang, Shuo-Tung, Johnson, N. M., Lyon, S. A.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 513 KB

english, 1984

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