Volume 44; Issue 5

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Applied Physics Letters
Volume 44; Issue 5

Applied Physics Letters

Volume 44; Issue 5

1

High-quality single GaAs quantum wells grown by metalorganic chemical vapor deposition

Miller, R. C., Dupuis, R. D., Petroff, P. M.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 581 KB

english, 1984

2

Organometallic vapor phase epitaxial growth of high purity GaInAs using trimethylindium

Kuo, C. P., Yuan, J. S., Cohen, R. M., Dunn, J., Stringfellow, G. B.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 496 KB

english, 1984

3

ââBuffer-layerââ technique for the growth of single crystal SiC on Si

Addamiano, A., Sprague, J. A.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 513 KB

english, 1984

4

Infrared spectrum of interstitial oxygen in silicon

Stavola, Michael

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 395 KB

english, 1984

5

Determination of carrier collection length and prediction of fill factor in amorphous silicon solar cells

B. W. Faughnan, R. S. Crandall

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 494 KB

english, 1984

6

Stability of NiSi2 and CoSi2 in contact with their free metal

Cahoon, E. C., Comrie, C. M., Pretorius, R.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 383 KB

english, 1984

7

Electron beam cutting in amorphous alumina sheets

Mochel, M. E., Eades, J. A., Metzger, M., Meyer, J. I., Mochel, J. M.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 518 KB

english, 1984

8

Dopant profiling in silicon on sapphire using spreading resistance

Pawlik, M., Groves, R. D.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 463 KB

english, 1984

9

Inelastic tunneling characteristics of AlAs/GaAs heterojunctions

Collins, R. T., Lambe, J., McGill, T. C., Burnham, R. D.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 492 KB

english, 1984

10

7.2% efficient polycrystalline silicon photoelectrode

Cogan, George W., Gronet, Chris M., Gibbons, James F., Lewis, Nathan S.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 518 KB

english, 1984

11

Novel x-ray backlighting method for measuring areal densities of Rayleigh–Taylor unstable, ablatively driven targets

Grun, J., Kacenjar, S.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 469 KB

english, 1984

12

Raman scattering spectrum analyses for fluorine-doped silica optical fibers

Noguchi, Kazuhiro, Murakami, Yasuji, Uesugi, Naoshi, Ishihara, Koushi

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 415 KB

english, 1984

13

Power gain of a SQUID amplifier

McDonald, D. G.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 493 KB

english, 1984

14

Spatially resolved measurement of substitutional dopant concentrations in semiconductors

Pennycook, S. J., Narayan, J., Holland, O. W.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 516 KB

english, 1984

15

Characterization of laser annealed InP with ellipsometry and Hall effect measurement

Fremunt, R., Hirayama, Y., Arai, F., Sugano, T.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 482 KB

english, 1984

16

Spatially resolved observation of carrier leakage in 1.3-μm In1−xGaxAsyP1−y lasers

Chen, Liang-Hui, Mattos, J. C. V., Prince, F. C., Patel, N. B.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 467 KB

english, 1984

17

Consequences of a lower level population on the modeling of a homogeneously broadened injection laser

Cassidy, Daniel T.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 472 KB

english, 1984

18

Formation of GaAsP by ion implantation and annealing

Aina, O., Pande, K. P.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 395 KB

english, 1984

19

Transport properties of composites having the CsCl structure

McPhedran, R. C.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 424 KB

english, 1984

20

Some characteristics of the GaAs/GaAlAs graded-index separate-confinement heterostructure quantum well laser structure

Hersee, S. D., de Cremoux, B., Duchemin, J. P.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 409 KB

english, 1984

21

High current density photoemissive electron source

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 320 KB

english, 1984

22

Coupled parallel waveguide semiconductor laser

Mukai, S., Kapon, E., Katz, J., Lindsey, C., Rav-Noy, Z., Margalit, S., Yariv, A.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 394 KB

english, 1984

23

SiOxNy capped annealing for Si-implanted GaAs

Kuzuhara, M., Kohzu, H.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 401 KB

english, 1984

24

Microwave integrated optical modulator

Cross, Peter S., Baumgartner, Richard A., Kolner, Brian H.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 396 KB

english, 1984

25

Polarization hysteresis in dielectric films using light diffraction by acoustic waves

Attard, Alfred E., Kuehls, John F.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 366 KB

english, 1984

26

Measurements of intensity fluctuations of an InGaAsP external cavity laser

Liu, Pao-Lo, Eisenstein, G., Tucker, R. S., Kaminow, I. P.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 418 KB

english, 1984

27

Josephson tunnel junctions with chemically vapor deposited polycrystalline germanium barriers

Kroger, H., Jillie, D. W., Smith, L. N., Phaneuf, L. E., Potter, C. N., Shaw, D. M., Cukauskas, E. J., Nisenoff, M.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 387 KB

english, 1984

28

Location of Te in epitaxially regrown Si layers

Dézsi, I., Van Rossum, M., Langouche, G., Coussement, R., Schroyen, D., Wu, M. F.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 412 KB

english, 1984

29

Improved linearity and kink criteria for 1.3-μm InGaAsP-InP channeled substrate buried heterostructure lasers

Dutta, N. K., Wilt, D. P., Besomi, P., Dautremont-Smith, W. C., Wright, P. D., Nelson, R. J.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 393 KB

english, 1984

30

Spectroscopic ellipsometric and He backscattering analyses of crystalline Si-SiO2 mixtures grown by molecular beam epitaxy

Maloney, T. J., Aspnes, D. E., Arwin, H., Sigmon, T. W.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 396 KB

english, 1984

31

Hot-electron energy deposition profiles in CO2 laser target interaction: A comparison between Kα and continuum measurements

Kieffer, J. C., Pépin, H., Amiranoff, F.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 432 KB

english, 1984

32

Schottky barrier restricted arrays of phase-coupled AlGaAs quantum well lasers

Temkin, H., Dupuis, R. D., Logan, R. A., van der Ziel, J. P.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 527 KB

english, 1984

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