Volume 44; Issue 8

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Applied Physics Letters
Volume 44; Issue 8

Applied Physics Letters

Volume 44; Issue 8

1

Direct evidence of arsenic clustering in high dose arsenic‐implanted silicon

Wu, N. R., Sadana, D. K., Washburn, J.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 519 KB

english, 1984

2

Differential effective medium theory of sedimentary rocks

Sheng, Ping, Callegari, A. J.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 521 KB

english, 1984

3

Theory of photoluminescence line shape due to interfacial quality in quantum well structures

Singh, Jasprit, Bajaj, K. K., Chaudhuri, S.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 435 KB

english, 1984

4

Transport properties of selectively doped GaAs-(AlGa)As heterostructures grown by molecular beam epitaxy

Hwang, J. C. M., Kastalsky, A., StoÌrmer, H. L., Keramidas, V. G.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 429 KB

english, 1984

5

Bulk nucleation and amorphous phase formation in highly undercooled molten silicon

Wood, R. F., Lowndes, D. H., Narayan, J.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 259 KB

english, 1984

6

Theoretical explanation of the absorptive optical bistability in semiconductors due to band-gap shrinkage

Schmidt, H. E., Haug, H., Koch, S. W.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 368 KB

english, 1984

7

Diffusion of silicon in gallium arsenide using rapid thermal processing: Experiment and model

Greiner, Mark E., Gibbons, James F.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 533 KB

english, 1984

8

High quality Hg1−xCdxTe epitaxial layers by the organometallic process

Ghandhi, Sorab K., Bhat, Ishwara

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 475 KB

english, 1984

9

Mechanism for dynamic annealing during high flux ion irradiation in Si

Holland, O. W., Narayan, J.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 515 KB

english, 1984

10

Erbium silicide formation using a line-source electron beam

Knapp, J. A., Picraux, S. T., Wu, C. S., Lau, S. S.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 508 KB

english, 1984

11

Low jitter streak camera triggered by subpicosecond laser pulses

Yen, R., Downey, P. M., Shank, C. V., Auston, D. H.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 462 KB

english, 1984

12

Photoemission studies of a-SixC1−x:H/a-Si and a-SixC1−x:H/ hydrogenated amorphous silicon heterojunctions

Evangelisti, F., Fiorini, P., Giovannella, C., Patella, F., Perfetti, P., Quaresima, C., Capozi, M.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 489 KB

english, 1984

13

Line-sampling multiframe stroboscopic technique for dynamic observation of periodic phenomena at low frequencies

Shimizu, R., Ikuta, T.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 411 KB

english, 1984

14

Surface treatment of (11̄02) sapphire and (100) silicon for molecular beam epitaxial growth

Christou, A., Richmond, E. D., Wilkins, B. R., Knudson, A. R.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 448 KB

english, 1984

15

Below band-gap photoluminescence of Hg1−xCdxTe

Polla, D. L., Aggarwal, R. L.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 380 KB

english, 1984

16

Supersaturation of self-interstitials and undersaturation of vacancies during phosphorus diffusion in silicon

Fahey, P., Dutton, R. W., Hu, S. M.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 518 KB

english, 1984

17

Optoelectronic properties of coupled cavity semiconductor lasers

Ebeling, K. J., Coldren, L. A.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 449 KB

english, 1984

18

Holographic moire deflectometry—A method for stiff density fields analysis

Stricker, J., Politch, J.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 494 KB

english, 1984

19

Anomalous laser penetration depths in multilayer planar targets

Ng, A., Pasini, D., Celliers, P.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 456 KB

english, 1984

20

GaInAsP/InP heterostructure lasers emitting at 1.5 μm and grown by gas source molecular beam epitaxy

Panish, Morton B., Temkin, Henryk

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 485 KB

english, 1984

21

Optical properties of transparent and heat-reflecting indium tin oxide films: The role of ionized impurity scattering

Hamberg, I., Granqvist, C. G.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 525 KB

english, 1984

22

Fluxon threshold properties on a resistively coupled Josephson transmission line

Nitta, J., Matsuda, A., Kawakami, T.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 454 KB

english, 1984

23

Hot-electron velocity overshoot in Ga0.47In0.53As

Ghosal, A., Chattopadhyay, D., Purkait, N. N.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 425 KB

english, 1984

24

Arsenic out-diffusion during TiSi2 formation

Amano, Jun, Merchant, P., Koch, Tim

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 465 KB

english, 1984

25

Experimental investigation of a magnetic gate as a multimegampere, vacuum opening switch

Kania, D. R., Jones, L. A., Zimmermann, E. L., Veeser, L. R., Trainor, R. J.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 461 KB

english, 1984

26

Carrier dependence of the radiative coefficient in III-V semiconductor light sources

Su, C. B., Olshansky, R., Manning, J., Powazinik, W.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 395 KB

english, 1984

27

Observation of optical hysteresis in an all-optical passive ring cavity containing molecular gas

Harrison, R. G., Firth, W. J., Emshary, C. A., Al-Saidi, I. A.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 411 KB

english, 1984

28

Thickness dependence of the switching time of the bistable boundary layer liquid crystal display

Thurston, R. N., Boyd, G. D., Senft, Donna Cowell

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 396 KB

english, 1984

29

10-W cw optically pumped 12-μm NH3 laser

Rolland, C., Reid, J., Garside, B. K.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 435 KB

english, 1984

30

Heteroepitaxial growth of high mobility InAsP from the vapor phase

Wang, P. J., Wessels, B. W.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 428 KB

english, 1984

31

Multicolor passive (self-pumped) phase conjugation

Cronin-Golomb, Mark, Kwong, Sze-Keung, Yariv, Amnon

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 428 KB

english, 1984

32

Direct confirmation of the conduction-band lineup in the CuInSe2-CdS heterojunction solar cell

Turowski, M., Kelly, M. K., Margaritondo, G., Tomlinson, R. D.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 499 KB

english, 1984

33

80× single-stage compression of frequency doubled Nd:yttrium aluminum garnet laser pulses

Johnson, A. M., Stolen, R. H., Simpson, W. M.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 488 KB

english, 1984

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