Volume 45; Issue 11

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Applied Physics Letters
Volume 45; Issue 11

Applied Physics Letters

Volume 45; Issue 11

1

Ultrasensitive fingerprint detection of organometallic compounds by laser multiphoton ionization mass spectrometry

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 568 KB

english, 1984

2

Chemical beam epitaxy of InP and GaAs

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 440 KB

english, 1984

3

Effect of photocarriers on acoustic wave propagation for measuring excess carrier density and lifetimes in silicon

Stearns, R. G., Khuri-Yakub, B. T., Kino, G. S.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 472 KB

english, 1984

4

Effects of prelayers on minority-carrier lifetime in GaAs/AlGaAs double heterostructures grown by molecular beam epitaxy

Dawson, P., Woodbridge, K.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 486 KB

english, 1984

5

1.55-μm InGaAsP ridge waveguide distributed feedback laser

Temkin, H., Dolan, G. J., Olsson, N. A., Henry, C. H., Logan, R. A., Kazarinov, R. F., Johnson, L. F.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 498 KB

english, 1984

6

Low-temperature vacuum tunneling microscopy

Elrod, S. A., de Lozanne, A. L., Quate, C. F.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 452 KB

english, 1984

7

Anomalous nonlinear guided wave cut-off phenomena

Seaton, Colin T., Valera, Jesus D., Shoemaker, Richard L., Stegeman, George I., Chilwell, John, Smith, S. Desmond

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 388 KB

english, 1984

8

Evidence for nonuniform flow of charge carriers through semiconductor junctions

Tenne, R., Marcu, V., Yellin, N.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 555 KB

english, 1984

9

Self-diffusivity of network oxygen in vitreous SiO2

Mikkelsen, J. C.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 500 KB

english, 1984

10

Pseudo-quaternary GaInAsP semiconductors: A new Ga0.47In0.53As/InP graded gap superlattice and its applications to avalanche photodiodes

Capasso, F., Cox, H. M., Hutchinson, A. L., Olsson, N. A., Hummel, S. G.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 495 KB

english, 1984

11

Mössbauer effect studies of Nd2Fe14B and related melt-spun permanent magnet alloys

Pinkerton, F. E., Dunham, W. R.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 444 KB

english, 1984

12

Reduction of electron and hole trapping in SiO2 by rapid thermal annealing

Weinberg, Z. A., Young, D. R., Calise, J. A., Cohen, S. A., DeLuca, J. C., Deline, V. R.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 500 KB

english, 1984

13

Selective area growth of gallium arsenide by metalorganic vapor phase epitaxy

Ghosh, C., Layman, R. L.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 495 KB

english, 1984

14

Traveling-wave electro-optic modulator with maximum bandwidth-length product

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 541 KB

english, 1984

15

Dynamics of optical TE to TM mode conversion in LiNbO3 channel waveguides

Lam, Juan F., Yen, Huan W.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 487 KB

english, 1984

16

Amplification by the phase-locking mechanism in a four-junction SQUID

McDonald, D. G.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 414 KB

english, 1984

17

Above threshold characteristics of amorphous silicon alloy thin-film transistors

Hyun, C., Shur, M. S., Hack, M., Yaniv, Z., Cannella, V.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 342 KB

english, 1984

18

Improved Schottky capacitance spectroscopy method for the study of interface states in metal-semiconductor junctions

Chekir, F., Barret, C.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 430 KB

english, 1984

19

Ion channeling studies of preferentially (111) oriented BaF2 films on amorphous SiO2 substrates

Ishiwara, Hiroshi, Kaifu, Noriyuki, Asano, Tanemasa

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 382 KB

english, 1984

20

Electrical properties of implanted and rapid thermal annealed shallow p+-n junctions

Ozguz, V. H., Wortman, J. J., Hauser, J. R., Simpson, L., Littlejohn, M. A., Chu, W. K., Rozgonyi, G. A.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 341 KB

english, 1984

21

Room-temperature annealing of radiation-induced defects in InP solar cells

Yamaguchi, Masafumi, Itoh, Yoshio, Ando, Koushi

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 417 KB

english, 1984

22

Atmospheric pressure operation of an electron beam excited KrF laser using Kr/F2 mixtures

Suda, Akira, Obara, Minoru, Fujioka, Tomoo

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 410 KB

english, 1984

23

Static and dynamic zig-zag magnetic domains

Hamzaoui, S., Labrune, M., Puchalska, I. B.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 403 KB

english, 1984

24

Surface accumulation of tin in tin-doped gallium arsenide grown by low pressure metalorganic vapor phase epitaxy

Sundaram, V. S., Roth, A. P., Williams, D. F., Yakimova, R.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 449 KB

english, 1984

25

Dynamic Burstein–Moss shift in GaAs and GaAs/AlGaAs multiple quantum well structures

Erskine, D. J., Taylor, A. J., Tang, C. L.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 447 KB

english, 1984

26

Modulation doping in GexSi1−x/Si strained layer heterostructures

People, R., Bean, J. C., Lang, D. V., Sergent, A. M., Störmer, H. L., Wecht, K. W., Lynch, R. T., Baldwin, K.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 409 KB

english, 1984

27

Determination of the valence-band discontinuity between GaAs and (Al,Ga)As by the use of p+-GaAs-(Al,Ga)As-p−-GaAs capacitors

Arnold, D., Ketterson, A., Henderson, T., Klem, J., Morkoç, H.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 389 KB

english, 1984

28

A fiber-optic laser-Doppler anemometer

Nguyen, Thang T., Binh, Le N.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 390 KB

english, 1984

29

Phase-locking characteristics of coupled ridge-waveguide InP/InGaAsP diode lasers

Kapon, E., Rav-Noy, Z., Lu, L. T., Yi, M., Margalit, S., Yariv, A.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 456 KB

english, 1984

30

Continuous wave mode-locked neodymium:phosphate glass laser

Strobel, Scott A., Ho, Ping-Tong, Lee, Chi H., Burdge, Geoffrey L.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 399 KB

english, 1984

31

Relationship between the conduction-band discontinuities and band-gap differences of InGaAsP/InP heterojunctions

Forrest, S. R., Schmidt, P. H., Wilson, R. B., Kaplan, M. L.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 521 KB

english, 1984

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