Volume 45; Issue 5

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Applied Physics Letters
Volume 45; Issue 5

Applied Physics Letters

Volume 45; Issue 5

1

Origin of oriented crystal growth of radiantly melted silicon on SiO2

Biegelsen, D. K., Fennell, L. E., Zesch, J. C.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 516 KB

english, 1984

2

Surface morphology of epitaxial CaF2 films on Si substrates

Fathauer, R. W., Schowalter, L. J.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 441 KB

english, 1984

3

Up conversion of luminescence via deep centers in high purity GaAs and GaAlAs epitaxial layers

Quagliano, Lucia G., Nather, Heinz

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 394 KB

english, 1984

4

Niobium films for superconducting accelerating cavities

Benvenuti, C., Circelli, N., Hauer, M.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 371 KB

english, 1984

5

Integrated-optical frequency translator with stripe waveguide

Heismann, F., Ulrich, R.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 496 KB

english, 1984

6

Reconstruction of electrodes and pole pieces from optimized axial field distributions of electron and ion optical systems

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 496 KB

english, 1984

7

Influence of high-temperature annealing on performance of edge-defined film-fed growth silicon ribbon solar cells

Kalejs, J. P., Ladd, L. A.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 467 KB

english, 1984

8

Origin of hydrogen in amorphous silicon produced by glow discharge in Si2H6+D2 and Si2D6+H2

Kuboi, Osamu, Hashimoto, Masanori, Yatsurugi, Yoshifumi, Nagai, Hisao, Aratani, Michi, Yanokura, Minoru, Hayashi, Shigeki, Kohno, Isao, Nozaki, Tadashi

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 382 KB

english, 1984

9

Phonon-limited mobility in GaAlAs/GaAs heterostructures

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 429 KB

english, 1984

10

AlF3—A new very high resolution electron beam resist

Muray, A., Isaacson, M., Adesida, I.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 429 KB

english, 1984

11

Failure of reciprocity in light-induced changes in hydrogenated amorphous silicon alloys

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 406 KB

english, 1984

12

Molecular beam epitaxy of GaAs and AlGaAs on Si

Tsaur, B-Y., Metze, G. M.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 411 KB

english, 1984

13

Photothermal spectroscopy of weakly absorbing samples using a thermal wave phase shifter

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 505 KB

english, 1984

14

Uniformity characterization of semi-insulating GaAs by cathodoluminescence imaging

Chin, A. K., Caruso, R., Young, M. S. S., Von Neida, A. R.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 427 KB

english, 1984

15

Contact resistance improvements by implantation through an Al mask

Faith, T. J., O’Neill, J. J., Hicinbothem, W. A.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 354 KB

english, 1984

16

Density of two-dimensional electron gas in modulation-doped structure with graded interface

Grinberg, A. A., Shur, M. S.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 339 KB

english, 1984

17

Origin of nonsymmetric dielectric relaxation in dipolar materials

Shimakawa, Koichi

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 350 KB

english, 1984

18

Embedded-mirror semiconductor laser

Laidig, W. D., Lee, J. W., Caldwell, P. J.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 434 KB

english, 1984

19

Epitaxial growth of CrSi2 on (111)Si

Shiau, F. Y., Cheng, H. C., Chen, L. J.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 419 KB

english, 1984

20

Laser cathode ray tube operation at room temperature

Levy, U., Logan, R. A., Niv, Y.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 438 KB

english, 1984

21

Liquid phase epitaxial growth of (AlzGa1−z)xIn1−xAsyP1−y pentanary on (100)GaAs substrate using a two-phase solution technique

Kawanishi, Hideo, Suzuki, Takeshi

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 384 KB

english, 1984

22

Surface photovoltage in hydrogenated amorphous silicon

Kumar, Shailendra, Agarwal, S. C.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 397 KB

english, 1984

23

Formation of titanium silicides by fast radiative processing

Wei, C. S., Van der Spiegel, J., Santiago, J. J., Seiberling, L. E.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 347 KB

english, 1984

24

Single quantum well lead-europium-selenide-telluride diode lasers

Partin, Dale L.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 400 KB

english, 1984

25

Evidence that the 0.635-eV luminescence band in semi-insulating GaAs is not EL2 related

Samuelson, L., Omling, P., Grimmeiss, H. G.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 368 KB

english, 1984

26

Effects of ion-implanted C on the microstructure and surface mechanical properties of Fe alloys implanted with Ti

Follstaedt, D. M., Knapp, J. A., Pope, L. E., Yost, F. G., Picraux, S. T.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 447 KB

english, 1984

27

Use of spatial time-division repetition rate multiplication of mode-locked laser pulses to generate microwave radiation from optoelectronic switches

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 473 KB

english, 1984

28

Electroluminescence from a heterojunction bipolar transistor

Hayes, J. R., Leheny, R. F., Temkin, H., Gossard, A. C., Wiegmann, W.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 470 KB

english, 1984

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